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Cadmium Telluride

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CdTe thin-film technology is being actively commercialized. CdTe cell efficiencies are over 16% in the laboratory; commercial module efficiencies are likely to be in the 9% range in the first manufacturing plants. Companies have an array of inexpensive options to choose from in CdTe fabrication-there are more than a dozen ways to make 10%—efficient cells.

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Conference Papers


Post Date10/29/2008
TitleMEASURING CDS/CDTE BACK CONTACT BARRIER HEIGHTS BY INTERNAL PHOTOEMISSION
Link(PDF 959 KBDownload Acrobat Reader.
AuthorA. Fahrenbruch
DescriptionThe back contact of the CdS/CdTe solar cell is one of the most critical aspects in optimizing efficiency and stability. A fundamental parameter is the barrier height ?bc and its measurement is important to fully understanding the device.
Plotting the Internal photoemission (IPE) current response to sub-band-gap light according to the Fowler theory gives an intercept equal to the barrier height. IPE can be applied to completed cells, and to thick, thin, and n/i/p cells. Results are compared for a number of cells from various fabricators, including those with good and bad contacts and electronically thick and thin cells. Results suggest two barriers in parallel: a high one, (~ 0.9 eV) which agrees well with the observed UPS values and a low one (~ 0.3 eV) with a much smaller area fraction (1 - 4%) which dominates the contact transport and corresponds more closely to the values observed for efficient cells. For thick cells, IPE results agree well with thermal measurements.
Venue33rd IEEE PV Specialists Conference, San Diego, CA, May 12-16, 2008
SourceColorado State University
Document TypeConference Papers (Adobe Postscript file)
Resource Date07/2008


Post Date10/29/2008
TitleEXPLORING BACK CONTACT TECHNOLOGY TO INCREASE CDS/CDTE SOLAR CELL EFFICIENCY
Link(PDF 237 KBDownload Acrobat Reader.
AuthorA. Fahrenbruch
DescriptionThe primary routes for increasing CdS/CdTe solar cell efficiency involve increasing free carrier density, reducing bulk and interface recombination, and/or reducing back contact barrier height ?bc. This paper focuses on the role of the back contact barrier in increasing cell efficiency. Measurement of ?bc and back surface recombination are outlined and three CdTe/MX/M back contact prototypes, each with particular strengths, are discussed.
VenueMaterials Research Society Spring Meeting, San Francisco, CA, 4/9-13, 2007, (MRS Smposia Proc vol 1012, p 283)
SourceColorado State University
Document TypeConference Papers (Adobe Postscript file)
Resource Date07/2008


Post Date05/30/2008
TitleTHE ROLE OF POLYCRYSTALLINE THIN-FILM PV TECHNOLOGIES IN COMPETITIVE PV MODULE MARKETS
Link(PDF 351 KBDownload Acrobat Reader.
AuthorsB. Von Roedern, H. S. Ullal
DescriptionThis paper discusses the developments in thin-film PV technologies. It provides an outlook on future commercial module efficiencies achievable based on today?s knowledge about champion cell performance. It also provides a relative cost comparison of thin-film and wafer/ribbon based Si PV modules. In 2007, about 65% of the modules produced in the US were thin-film modules when amorphous silicon modules are also considered.
VenuePresented at the 33rd IEEE PVSC Conference, San Diego, CA 05/12-16/2008
SourceNational Renewable Energy Laboratory
Document TypeConference Papers (Adobe Postscript file)
Resource Date05/2008


Post Date09/28/2007
TitleTHIN FILM CIGS AND CDTE PHOTOVOLTAIC TECHNOLOGIES: COMMERCIALIZATION, CRITICAL ISSUES, AND APPLICATIONS
Link(PDF 725 KBDownload Acrobat Reader.
AuthorsH. S. Ullal, B. Von Roedern
DescriptionWe report here on the major commercialization aspects of thin-film photovoltaic (PV) technologies based on CIGS and CdTe (a-Si and thin-Si are also reported for completeness on the status of thin-film PV). Worldwide silicon (Si) based PV technologies continues to dominate at more than 94% of the market share, with the share of thin-film PV at less than 6%. However, the market share for thin-film PV in the United States continues to grow rapidly over the past several years and in CY 2006, they had a substantial contribution of about 44%, compared to less than 10% in CY 2003. In CY 2007, thin-film PV market share is expected to surpass that of Si technology in the United States. Worldwide estimated projections for CY 2010 are that thin-film PV production capacity will be more than 3700 MW. A 40-MW thin-film CdTe solar field is currently being installed in Saxony, Germany, and will be completed in early CY 2009. The total project cost is Euro 130 million, which equates to an installed PV system price of Euro 3.25/-watt averaged over the entire solar project. This is the lowest price for any installed PV system in the world today. Critical research, development, and technology issues for thin-film CIGS and CdTe are also elucidated in this paper.
Venue22nd EC PVSEC, Milano, Italy Sep 3-7, 2007, paper presented
SourceNational Renewable Energy Laboratory
Document TypeConference Papers (Adobe Postscript file)
Resource Date09/2007


Post Date04/30/2007
TitleOUTDOOR MONITORING AND HIGH VOLTAGE BIAS TESTING OF THIN FILM PV MODULES
Link(MS Word 64 KB
AuthorN. G. Dhere
DescriptionLimitations of accelerated testing to predict all possible degradation modes and mechanisms in the photovoltaic PV modules necessitate that actual outdoor monitoring and testing of PV modules be performed out-doors. For this reason, thin film PV modules from leading US thin film PV manufacturers namely, First Solar (Glass/CdTe/Glass), Shell Solar Glass/CIS/Glass), Shell Solar New (Glass/CIGS/Glass), United Solar (a-Si:H on flexible substrate), Energy Photovoltaics (Glass/a-Si:H/Glass) and Global Solar (CIS on flexible substrate) with additional one crystalline silicon module are being tested. The goal is to assess their performance in the hot and humid climate of Florida and to correlate the PV performance with the meteorological parameters namely, solar irradiance, temperature, relative humidity, wind speed, etc. Statistical data analysis of the recorded data is carried out on a daily basis and on a monthly basis with PVUSA type regression analysis. Current-voltage characteristics (I-V) of module arrays taken on a regular basis complement the results obtained with continuous data monitoring. Moreover, high voltage bias testing of the modules is carried out to study behavior of leakage currents and detect any packaging material and processing flaws and consequently the module reliability.
VenueDOE Solar Technology Review Meeting, Denver, CO, 4/17-19/2007
SourceFLorida Solar Energy Center
Document TypeConference Papers (Word document)
Resource Date03/2007


Post Date04/30/2007
Title  VOLTAGE DEFICIT IN THIN-FILM POLYCRYSTALLINE SOLAR CELLS
Link(MS Word 46 KB
AuthorJ. R. Sites
Description      The highest reported efficiency for thin-film CIGS solar cells is 3% larger than the highest seen with CdTe cells.  The lower CdTe efficiency is the result of a much larger voltage deficit between CdTe cells and crystalline cells of similar band gap.  The explanation for the difference is that CIGS has a natural energy barrier, which repels holes from grain boundaries, but CdTe does not.  Significant efficiency increases in CdTe cells will therefore likely require new structures with full absorber depletion and electron reflection at the back contact.
VenueDOE Solar Technology Review Meeting, Denver, CO 4/17-17/2007
SourceColorado State University
Document TypeConference Papers (Word document)
Resource Date03/2007


Post Date10/26/2006
TitleBOS COST SAVINGS NEEDS AND POTENTIAL FOR LARGE SCALE GROUND BASED PV SYSTEMS UNTIL 2010
Link(PDF 495 KBDownload Acrobat Reader.
AuthorM. Bachler
DescriptionMore and more large scale ground based systems were implemented with thin-film modules in the past years in Germany. Based on module pricing thin film modules appear to be very attractive for this type of application. However there are quite significant differences in balance-of-system (BOS) costs within different c-Si and thin film (TF) module types, which have a high impact on total system costs. The BOS cost portion is significantly higher for systems with TF modules compared to c-Si modules. Existing c-Si modules and BOS components were developed and optimized to achieve cost savings in the past decades already a lot. TF modules as well as the related BOS components are at the very beginning of this development so the cost saving potential ? especially for BOS costs is considered to be significantly higher for TF module based systems. Since a 6.5% degression in the feed-in tariff is required in the German EEG for ground based systems a high cost reduction pressure is imposed on total system costs. The results of BOS cost savings achieved already will be demonstrated for a sample thin-film module.
VenueDresden World Conference
SourcePhonix SonnenStrom AG
Document TypeConference Papers (Adobe Postscript file)
Resource Date09/2006


Post Date06/14/2006
TitleCDTE PHOTOVOLTAICS: LIFE CYCLE ENVIRONMENTAL PROFILE AND COMPARISONS
Link(PDF 210 KBDownload Acrobat Reader.
AuthorV. Fthenakis
DescriptionWe discuss the emissions of cadmium throughout all the life stages of CdTe PV modules, from extracting, refining, and purifying the raw materials to producing, using, and disposing or recycling of the modules. Then, we compare these emissions with those in the life cycle of three different types of crystalline Si PV modules. The energy requirement and energy pay back times (EPBT) of CdTe PV modules is considerably shorter than that of crystalline Si modules, although the latter exhibit higher efficiencies. This difference is primarily due to the energy used to process silicon, a fraction of which is derived from fossil fuels, inevitably producing Cd and many other heavy-metal emissions.
VenuePresented at the European Material Research Society Meeting
SourceN/A
Document TypeConference Papers (Adobe Postscript file)
Resource Date06/2006


Post Date08/25/2006
TitlePOLYCRYSTALLINE THIN-FILM PHOTOVOLTAICS: FROM THE LABORATORY TO SOLAR FIELDS
Link(PDF 682 KBDownload Acrobat Reader.
AuthorsB. Von Roedern, H. S. Ullal, K. Zweibel
DescriptionWe review the status of commercial polycrystalline thin-film solar cells and photovoltaic (PV) modules, including current and projected commercialization activities. Major technical progress has occurred in the area of thin-film PV technologies, particularly those based on cadmium telluride (CdTe) and copper indium diselenide (CuInGaSe2)
VenuePresented at the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion (WCPEC-4) Waikoloa, Hawaii May 7?12, 2006
Conference Paper NREL/CP-520-39838 May 2006
SourceNational Renewable Energy Laboratory
Document TypeConference Papers (Adobe Postscript file)
Resource Date05/2006


Post Date05/22/2006
TitleTECHNOLOGY CHOICE AND THE COST REDUCTION POTENTIAL OF PHOTOVOLTAICS
Link(PDF 116 KBDownload Acrobat Reader.
AuthorsJ. E. Trancik, K. Zweibel
DescriptionWe use a combination of system component analyses and individual experience curves for crystalline silicon (x-Si) modules, thin-film (TF) modules, and the balance of system (BOS) components, to compare future growth scenarios for photovoltaics (PV). The growth rates of TF and x-Si technologies are varied, while overall PV growth is held constant at 30%. For each of these scenarios, we estimate the total investment required for PV to reach a break-even point with fossil fuel based generation; and we investigate the intrinsic/lowest achievable costs from an analysis of potential materials, processing, and efficiency improvements. Our results show that a high growth rate (50 to 70% per year) of new technologies with low intrinsic costs could decrease the total investment required to reach break-even by up to 70 billion USD, as compared to a scenario where x-Si continues to dominate the market. Furthermore, the system component analysis indicates that existing TF modules can reach the low cost levels assumed in the experience curve model. These results suggest that the future growth of photovoltaics (PV) is dependent on which PV technologies grow most rapidly. New, low intrinsic cost technologies that are successfully able to enter the market could dramatically increase the potential for PV to become a globally significant energy conversion technology within the next two decades.
VenueTrancik and Zweibel, WCPEC-4 2006
SourcesNational Renewable Energy Laboratory; Santa Fe Institute
Document TypeConference Papers (Adobe Postscript file)
Resource Date05/2006


Post Date11/07/2006
TitleTHE RELATIONSHIP OF CDS/CDTE CELL BAND PROFILES TO J-V CHARACTERISTICS AND BIAS-DEPENDENT QUANTUM EFFICIENCY
Link(PDF 1.6 MBDownload Acrobat Reader.
AuthorA. Fahrenbruch
Description

AMPS models of two extreme profiles are discussed here as illustrations: an n/i/p junction, where Vbi is mainly supported by charge at the contacts, and an n/p junction, where Vbi is supported by charge in the bulk CdTe within the absorber

There are several general pathways to increasing the efficiency of CdS/CdTe cells. Since Jsc is close to its limit, those with the most potential yield involve increasing the cell voltage at the maximum power point (Vmax). These are discussed here in a theoretical way to view trends, allowing that they may be very difficult or impossible to realize in practice. One pathway is by increasing the net negative charge in the CdTe by ?p-type doping.? Another is by increasing the minority carrier lifetime (tn) by, for example, control of impurities, reducing growth rate, and/or changing the micro-stoichiometry. These two pathways deal with bulk materials properties. A third pathway is by decreasing the back-contact barrier height Fbc and the recombination there, both interface properties. Many other pathways are less risky and more practical including: thinner windows and/or absorber layers, increasing the window band gap, and optical optimization.

 

Venue4th WCPEC ((IEEE PVSC), Hawaii 05/2006 paper
SourceColorado State University
Document TypeConference Papers (Adobe Postscript file)
Resource Date05/2006


Post Date09/19/2006
TitleHOW CDTE SOLAR CELLS OPERATE: DETERMINING COLLECTION USING BIFACIAL DEVICE CHARACTERIZATION
Link(PDF 113 KBDownload Acrobat Reader.
AuthorsD. Desai, S. S. Hegedus, B. E. McCandless, R. W. Birkmire, K. D. Dobson, D. Ryan
Description

The results presented in this paper provide a quantitative understanding of minority carrier transport parameters in CdTe based photovoltaic devices. We have demonstrated that bifacial device characterization is a valuable and efficient tool for analysis of the primary transport parameters and allows separation of the primary CdS/CdTe junction from the back contact. We conclude that for standard front illumination, the fill factor (FF) and spectral response from front (SRF) are limited by voltage dependent collection and L is nearly irrelevant. However, spectral response from back illumination (SRB) is limited by diffusion through the bulk to the depletion edge. W and L were derived by extensive numerical analysis of SRB data. The values of W obtained were independently confirmed by CV measurements, thus validating the numerical model and the analysis procedure. The blocking contact usually observed in CdTe devices is photoconductive and can be effectively eliminated by illumination. This blocking contact barrier has no effect on Voc.

VenueIEC, U. Delaware, paper given at 4th WCPEC (Hawaii, 2006)
SourceUniversity of Delaware
Document TypeConference Papers (Adobe Postscript file)
Resource Date05/2006


Post Date05/18/2006
TitleHIGH-EFFICIENCY CDTE AND CIGS THIN-FILM SOLAR CELLS: HIGHLIGHTS AND CHALLENGES
Link(MS Word 602 KB
AuthorsR. Noufi, K. Zweibel
DescriptionThin-film photovoltaic (PV) modules of CdTe and Cu(In,Ga)Se2 (CIGS) have the potential to reach cost-effective PV-generated electricity. These technologies have transitioned from the laboratory to the market place. Pilot production and first-time manufacturing are ramping up to higher capacity and enjoying a flood of venture-capital funding. CIGS solar cells and modules have achieved 19.5% and 13% efficiencies, respectively. Likewise, CdTe cells and modules have reached 16.5% and 10.2% efficiencies, respectively. Even higher efficiencies from the laboratory and from the manufacturing line are only a matter of time. Manufacturing-line yield continues to improve and is surpassing 85%. Long-term stability has been demonstrated for both technologies; however, some failures in the field have also been observed, emphasizing the critical need for understanding degradation mechanisms and packaging options. These two thin-film technologies have a common device/module structure: substrate, base electrode, absorber, junction layer, top electrode, patterning steps for monolithic integration, and encapsulation. The monolithic integration of thin-film solar cells can lead to significant manufacturing cost reduction compared to crystalline Si technology. The CdTe and CIGS modules share common structural elements. In principle, this commonality should lead to similar manufacturing cost per unit area, and thus, the module efficiency becomes the discriminating factor that determines the cost per watt. The long-term potential of the two technologies require R&D emphasis on science and engineering-based challenges to find solutions to achieve targeted cost-effective module performance, and in-field durability. Some of the challenges are common to both, e.g., in-situ process control and diagnostics, thinner absorber, understanding degradation mechanisms, protection from water vapor, and innovation in high-speed processing and module design. Other topics are specific to the technology, such as lower-cost and fast-deposition processes for CIGS, and improved back contact and voltage for CdTe devices.
VenueWPEC4, Hawaii
SourceNational Renewable Energy Laboratory
Document TypeConference Papers (Word document)
Resource Date05/2006


Post Date10/20/2005
TitleA REVIEW OF RISKS IN THE SOLAR ELECTRIC LIFE-CYCLE
Link(PDF 642 KBDownload Acrobat Reader.
AuthorsV. Fthenakis, H. C. Kim
DescriptionEarly studies of risks in the life cycle of solar electric technologies do not represent their current stage of development. Our study updates the data used in previous studies and also accounts for the full life-cycle of photovoltaics. We show that the non-radiological risks of the solar electric- and nuclear-life cycles are approximately equal. This contradicts the conclusions of some earlier studies according to which the former presented much greater occupational and public non-radiological risks than the latter.
VenueBrussels 2005
SourceBrookhaven National Laboratory
Document TypeConference Papers (Adobe Postscript file)
Resource Date10/2005


Post Date10/20/2005
TitleLIFE CYCLE ANALYSIS OF PHOTOVOLTAIC SYSTEMS
Link(PDF 144 KBDownload Acrobat Reader.
AuthorV. Fthenakis
DescriptionLife Cycle Analyses (LCA) at BNL show that: i) The BOS of an optimized installation has an energy payback time (EPBT) of only 0.4 years for average US insolation, which is 70% lower than previously reported estimates. ii) The EPBT of CdTe modules produced and used in the U.S. is 0.85 years. iii) The life-cycle CO2 emissions of the nuclear fuel cycle in the U.S. are about the same as those in the PV cycle; this contrasts European studies showing CO2 emissions from nuclear to be 10 lower than those from PV.
VenueSolar Program Review Meeting 2005
SourceBrookhaven National Laboratory
Document TypeConference Papers (Adobe Postscript file)
Resource Date10/2005


Post Date06/13/2005
TitleIMPLICATIONS OF EUROPEAN ENVIRONMENTAL LEGISLATION FOR PHOTOVOLTAIC SYSTEMS
Link(PDF 434 KBDownload Acrobat Reader.
AuthorsM. J. De Wild-Scholten, K. Wambach, E. A. Alsema, A. Jager-Waldau
DescriptionAn overview is given of European environmental legislation which is effective now or proposed and which may have implications for the photovoltaic industry. The focus will be on legislation, which has been implemented already in national law, like the WEEE (waste electrical and electronic equipment)- and ROHS Reach (Registration, Evaluation, Authorisation and Restriction of Chemicals), F-gases (regulation on certain fluorinated greenhouse gases) and EuP (eco-design requirements for energy-using products). A change of the module design, with the research, development, implementation and certification necessary to be able to
produce photovoltaic systems that comply with such legislation, may be very time-consuming and expensive. Therefore a pro-active approach by the PV community is desirable. Environmental life cycle thinking and eco-design is becoming increasingly important as part of the European product and waste policy and will have its impact on the PV industry as well. Design-for-recycling must be encouraged to allow for an easy, cost-effective disassembly, with a high retrieval of for instance the precious crystalline silicon solar cells. A closed production cycle, i.e. guaranteed take back system, would probably prevent the commission as well as member states to impose legislative measures.
Venue20th European PVSC Barcelona
SourcesDeutsche Solar; Energy Research Centre of the Netherlands
Document TypeConference Papers (Adobe Postscript file)
Resource Date06/2005


Post Date06/14/2005
TitleEMPIRICAL TUNING METHODOLOGY FOR AS AND CL DOPING OF MOCVD GROWN CDTE
Link(PDF 192 KBDownload Acrobat Reader.
AuthorV. Barrioz
DescriptionPhotovoltaic solar cells based on CdTe absorbers are still showing comparitively high efficiencies, currently at 16.5%. However, these cells rely on CdCl2 treatments which are not fully understood and constrainflexibility over cell design. In this work, the effect of controlled arsenic and chlorine doping will be discussed as a potential alternative to CdCl2 treatments. The CdTe/CdS structures were grown by MOCVD onto commercial ITO/glass substrates. Numerous growth and post-growth parameters were varied such as; the II:VI precursor ratios, the substrate temperatures (Tsub) and the in situ post-growth annealing ambient gas (H2 or N2). A strategic statistical design of experiments, the Taguchi matrix method, was used, to establish the best combination of material parametersfor photovoltaic solar cell. High arsenic doping concentrations were  needed to achieve a good photo-response in the test cells with a Jsc = 24.3 mA.cm-2, but the cell efficiency was limited by other parameters Voc = 0.55 V; FF = 40.9 %. The other main parameters increasing the cell efficiency were the in situ CdCl2 treatment and substrate temperatures of 315oC and 390oC during the growth of CdS and CdTe respectively. Any post-growth annealing at 500oC damaged considerably the photocurrent response. The method has been successful in showing rapid progress with a new approach, using 16 material and process parameters, in just 36 experiments, for achieving acceptable PV test cells.
Venue20th EU PVSC Barcelona
SourceUniversity of Wales
Document TypeConference Papers (Adobe Postscript file)
Resource Date06/2005


Post Date06/14/2005
TitleENERGY AND LIFE CYCLE ASSESSMENT OF THIN FILM CDTE PHOTOVOLTAIC MODULES
Link(PDF 360 KBDownload Acrobat Reader.
AuthorM. Raugei
Descriptiontopic of this paper is the Life Cycle Assessment (LCA) of modern CdTe PV modules. The analysis was performed within the framework of the European research project PVACCEPT, and is based on actual
production data provided by the former project partner ANTEC Solar GmbH. This latter point makes the present LCA especially worthy of attention as a preliminary indication of the future environmental impact that the upscaling of CdTe module production may entail. The analysis is performed according to the recommendations of ISO norms 14040 and updates, and makes use of an original multi-criteria approach named SUMMA. The performance of the analysed CdTe system is also compared to other examples of advanced PV systems based on
different technologies (CIS and mc-Si), which were also part of the PVACCEPT project. Results clearly show an overall very promising picture for CdTe technology, which is found to be characterised by
favourable environmental impact indicators (e.g. 60g(abiotic matter)/kWh, 32 g(CO2-eq)/kWh and energy payback of 0.9 yrs. 
Venue20th EU PVSC Barcelona
SourceUniversity of Siena
Document TypeConference Papers (Adobe Postscript file)
Resource Date06/2005


Post Date06/29/2005
TitleNREL PAPERS FOR THE PVSC IN ORLANDO, 2005
Link(MS Word 41 KB
AuthorN/A
DescriptionLinks to about 20 papers in CIS, CdTe, a-Si, thin Si and reliability.
Venue
SourceNational Renewable Energy Laboratory
Document TypeConference Papers (Word document)
Resource Date06/2005


Post Date05/09/2005
TitleCURRENT TRANSIENTS IN CDS/CDTE SOLAR CELLS
Link(PDF 194 KBDownload Acrobat Reader.
AuthorA. Fahrenbruch
DescriptionCurrent transient responses to voltage and illumination steps are investigated to clarify the mechanisms involved in carrier transport in CdS/CdTe cells. For most cells, the response to a dark, forward-bias step after a long dark soak at zero bias is a current growth curve For one such
cell, the magnitude of the transient is ¡Ö 22% of the starting value with half of the growth occurring within ¡Ö 5 sec, the other half requiring 1000's of seconds. The effect is completely reversible and a mirror-image decay curve at zero bias after dark bias-on equilibration can be measured. Similarly, a complex of growth and decay curves are observed on application of illumination steps with constant bias. Similar transients have been observed by McMahon [1] and del Cueto et al. [2]. This is a survey of these effects in cells from three different fabricators. These transients, with varying magnitudes and directions, were seen in all the cells studied.
In general, the better the cell, the smaller the magnitudes of the transients. They range from changes by factors of 10 for pathological cells to subtle transients of 1-2% in excellent cells. Beside the important implications these transients have for accurate measurements of cell efficiency and stability, they provide clues about the carrier transport mechanisms.. One of the mechanisms proposed involves the occupation of deep donor traps with small hole cross sections, changing their recombination kinetics. The second hypothesis involves the modulation of the junction barrier profile by changing the charge on deep acceptors and donors by carrier trapping,
leading to a change in the effective junction barrier height. A third involves defect mutation such as that of [Cui] donors into [VCd].
VenuePresented at the MRS Spring Meeting 3/28-4/1/2005, San Francisco REVISED 4/9/2005
SourceColorado State University
Document TypeConference Papers (Adobe Postscript file)
Resource Date04/09/2005


Post Date04/05/2005
TitlePHYSICS OF CDTE PHOTOVOLTAICS: FROM FRONT TO BACK
Link(PDF 332 KBDownload Acrobat Reader.
AuthorsV. G. Karpov, et al.
DescriptionWe discuss physical mechanisms underlying the performance and stability of CdTe based thin-film PV. The processes in (i) photovoltaic junction, (ii) back contact, (iii) nonuniformities, (iv) grain boundaries, and (v) light-induced degradation are addressed including their interactions. The physics of thin film PV turns out to be quite different from that of crystalline PV. High surface-volume ratio and lack of crystallinity result in strong interfacial effects, lateral nonuniformities, and shunting-like and adhesion instabilities in thin film structures. This paper is aimed at presenting a ?big picture?; also, it suggests practical ways of improving thin-film PV.
VenueMRS Spring Meeting 2005, March 28 ? April 1, San Francisco,
SourceUniversity of Toledo
Document TypeConference Papers (Adobe Postscript file)
Resource Date03/28/2005


Post Date07/15/2005
TitleQUANTIFICATION OF LOSSES IN THIN FILM CDS/CDTE CELLS
Link(PDF 288 KBDownload Acrobat Reader.
AuthorsS. Demetsu, J. R. Sites
DescriptionQuantification of solar cell losses can identify promising pathways for further cell improvements. This paper expands earlier work and applies it specifically to CdS/CdTe cells. For the analysis we have defined four cells: The Target cell is one that should be possible with current industrial processes. The Production cell is typical of today?s production. The Record cell has the highest efficiency (16.5%) reported to date. The Ideal cell has the highest theoretical performance for CdTe. The systematic technique of separating losses, referred to as third level metrics, breaks current, voltage, and fill-factor losses down into their individual loss mechanisms. The losses are expressed both as the deficiency in the specific parameter and as the impact on cell efficiency. The latter allows clear identification of the most significant losses. R-
VenuePVSC Orlando, FL 2005
SourceColorado State University
Document TypeConference Papers (Adobe Postscript file)
Resource Date01/2005


Post Date02/11/2005
TitleLIFE CYCLE ASSESSMENT OF PHOTOVOLTAICS: PERCEPTIONS, NEEDS, AND CHALLENGES
Link(PDF 222 KBDownload Acrobat Reader.
AuthorsE. A. Alsema, M. J. De Wild-Scholten, V. Fthenakis
DescriptionHigh impact publications recently depicted PV technologies as having higher external environmental costs than those of nuclear energy and natural-gas-fueled power plants. These assessments are based on old data and unbalanced assumptions, and they illustrate the need for LCA data describing the continuously improving photovoltaic systems and the inclusion of social benefits in this comparison.
VenueIEEE Photovoltaic Specialistis Conference, Jan. 3-7, 2005, Orlando, FL
SourcesBrookhaven National Laboratory; Energy Research Centre of the Netherlands; Utrecht University
Document TypeConference Papers (Adobe Postscript file)
Resource Date01/2005


Post Date02/15/2005
TitleEARLY PERFORMANCE FOR THE ROOF-MOUNTED, 20-KW THIN FILM CDTE PV-ARRAY AT JASPER RIDGE
Link(PDF 364 KBDownload Acrobat Reader.
AuthorsJ. H. Scofield, et al.
DescriptionHere we report early performance for the grid-connected, 20-kW CdTe PV array installed on the roof of the Leslie Shao-ming Sun Field Station at the Jasper Ridge Biological Preserve. The array was installed in May 2002. Data are reported for 20-mos beginning April 2003. The array originally consisted of 275, BP Solar 80W thin-film CdTe modules arranged in 11-module strings. The monitoring system logged data from 9 sensors on 1-min intervals. Monitoring showed problems with maximum power tracking associated with module degradation, ele-vated module temperatures, and the finite voltage window of the 208VAC-3p inverter. The problems were addressed in May 2004 by re-wiring the array and reprogramming the inverter, resulting in a 20% increase in energy production.
VenueIEEE PVSC
SourceOberlin College
Document TypeConference Papers (Adobe Postscript file)
Resource Date01/2005


Post Date02/14/2005
TitleEARLY PERFORMANCE FOR THE ROOF-MOUNTED, 20-KW THIN FILM CDTE PV-ARRAY AT JASPER
Link(PDF 354 KBDownload Acrobat Reader.
AuthorJ. H. Scofield
DescriptionWe report early performance for the grid-connected, 20-kW CdTe PV array installed on the roof of the Leslie Shao-ming Sun Field Station at the Jasper Ridge Biological Preserve. The array was installed in May 2002. Data are reported for 20-mos beginning April 2003. The array originally consisted of 275, BP Solar 80W thin-film CdTe modules arranged in 11-module strings. The monitoring system logged data from 9 sensors on 1-min intervals. Monitoring showed problems with maximum power tracking associated with module degradation, elevated module temperatures, and the finite voltage window of the 208VAC-3p inverter. The problems were addressed in May 2004 by re-wiring the array and reprogramming the inverter, resulting in a 20% increase in energy production.
VenueIEEE PVSC
SourceOberlin College
Document TypeConference Papers (Adobe Postscript file)
Resource Date01/2005


Post Date03/22/2005
TitleQUANTIFICATION OF LOSSES IN THIN-FILM CDS/CDTE SOLAR CELLS
Link(MS Word 3.5 MB
AuthorsS. Demetsu, J. R. Sites
Description  Quantification of solar cell losses can identify promising pathways for further cell improvements. This paper expands earlier work and applies it specifically to CdS/CdTe cells.  For the analysis we have defined four cells:  The Target cell is one that should be possible with current industrial processes.  The Production cell is typical of today?s production. The Record cell has the highest efficiency (16.5%) reported to date.  The Ideal cell has the highest theoretical performance for CdTe.  The systematic technique of separating losses, referred to as third level metrics, breaks current, voltage, and fill-factor losses down into their individual loss mechanisms.  The losses are expressed both as the deficiency in the specific parameter and as the impact on cell efficiency.  The latter allows clear identification of the most significant losses.
VenuePVSC-31 IEEE
SourceColorado State University
Document TypeConference Papers (Word document)
Resource Date01/2005


Post Date02/15/2005
TitleANALYTICAL RESULTS OF OUTPUT RESTRICTION DUE TO THE VOLTAGE INCREASING OF POWER DISTRIBUTION LINE IN GRID-CONNECTED CLUSTERED PV SYSTEMS
Link(PDF 2.4 MBDownload Acrobat Reader.
AuthorsY. Ueda, et al.
DescriptionOutput restriction to prevent over voltage of power distribution line is one of the concerns for grid-connected clustered PV systems. To investigate the behavior of clustered PV systems, "Demonstrative research on clustered PV systems" has being conducted from December, 2002 in Gunma, Japan. More than 200 residential PV systems are already installed in demonstrative research area. Operation point of array output is estimated using minutely averages of collected data. The method to quantify loss due to output restriction is developed in this study.
VenueIEEE PVSC
SourceTokyo University
Document TypeConference Papers (Adobe Postscript file)
Resource Date01/2005


Post Date02/07/2005
TitleTHE ROLE OF POLYCRYSTALLIN THIN-FILM PV TECHNOLOGIES FOR ACHIEVING MID-TERM MARKET-COMPETITIVE PV MODULES
Link(MS Word 123 KB
AuthorsB. Von Roedern, K. Zweibel
DescriptionUsing efficiency as the main parameter, projecting the cost competitiveness of thin films and x-Si. Current commercial status of CuInSe2 alloys (collectively, CIS) and CdTe-based photovoltaic (PV) modules, comparing the performance of commercial products with the results achieved for solar cell and prototype module champions. We provide an update for these PV cell and module technologies, and also compare CIS and CdTe performance levels to the results achieved by the crystalline Si PV industry. This comparison shows that CIS and CdTe module technology presently offers the best (and perhaps only) approach for significantly exceeding the cost/performance levels established by crystalline Si PV technologies. A semi-empirical methodology is used for comparing "champion" solar cell and prototype module data with performance achieved on manufacturing lines. Using a conservative assumption that thin-film technologies will eliminate the 40% of PV module costs arising from the Si wafer or ribbon, we estimate the future performance of all established PV module candidates, and conclude that, based on 2004 knowledge about each PV technology, CIS and CdTe should provide cost-competitive advantages over crystalline Si.
VenueIEEE PV Specialists Conference, 2004
SourceNational Renewable Energy Laboratory
Document TypeConference Papers (Word document)
Resource Date01/2005


Post Date03/22/2005
TitleLBIC ANALYSIS OF THIN-FILM POLYCRYSTALLINE SOLAR CELLS
Link(MS Word 1.1 MB
AuthorsT. J. Nagle, J. R. Sites
DescriptionLight-beam-induced-current (LBIC) measurements are providing a direct link between the spatial non-uniformities inherent in thin-film polycrystalline solar cells, such as CdTe and CIGS, and the overall performance of these cells.  LBIC is uniquely equipped to produce quantitative maps of local quantum efficiency with relative ease.  Spatial resolution of 1 ?m at 1-sun intensity, and return to the same area after other measurements, is routinely achieved.  A wavelength range of 638 to 857 nm is available with diode lasers.  The LBIC measurements demonstrate that several types of effects that alter cell performance can be traced to specific local-area features.  Examples of such effects include defects related to edges, grids, or scribes, spatial variations in alloying, and local changes due to high-temperature stress.
VenueIEEE PVSC-31
SourceColorado State University
Document TypeConference Papers (Word document)
Resource Date01/2005


Post Date02/09/2005
TitleTRANSPARENT CONTACT DEVELOPMENT FOR CDSE TOP CELLS IN HIGH EFFICIENCY TANDEM STRUCTURES
Link(MS Word 65 KB
AuthorsP. Mahawala, et al.
Descriptiondeveloping transparent contact/CdSe/transparent contact structures deposited on glass/SnO2:F. With these transparent structures we have demonstrated record Jsc's of 17.4 mA/cm2. SnO2 serves as the n contact, and the p contact is ZnSe:Cu. These structures have also exhibited sub band gap transmission of 80%. We have evaluated ZnO and CdS as alternative n contacts and ZnTe as an alternative p contact. Voc's of only 300 mV are being attained with ZnSe:Cu because its Fermi level seems to be near the middle of the band gap of CdSe in spite of favorable valence band alignment. However, using ZnTe:Cu as the p contact we have achieved Voc's up to 575 mV, a new high.
VenueIEEE
SourceUniversity of South Florida, Tampa
Document TypeConference Papers (Word document)
Resource Date11/2004


Post Date02/09/2005
TitleHIGH THROUGHPUT PROCESSING OF CDTE/CDS SOLAR CELLS
Link(MS Word 596 KB
AuthorsB. E. McCandless, et al.
DescriptionMethods for achieving high throughput and materials yield in processing >13% efficient CdTe thin film solar cells are demonstrated, with emphasis on emiconductor deposition and post-deposition processing. Chemical surface deposition was used to deposit uniform 100 cm2 area CdS films 50 nm thick at 0.2 nm/sec, with >80% tilization of solvated Cd species. Vapor transport at 20 Torr was used to deposit dense CdTe films, 1-7 ?m thick, onto CdS-coated substrates with >50% utilization in an unbaffled system. Uniform films have been deposited with translation at up to 12 cm/min and static equivalent growth rate >80 ?m/min. Vapor CdCl2 post-deposition treatments yielded solar cells with AM1.5 conversion efficiency >13% for 6 mm thick CdTe and >8% for 1 mm thick CdTe.
VenueIEEE PVSC
SourceUniversity of Toledo
Document TypeConference Papers (Word document)
Resource Date10/2004


Post Date02/04/2005
TitleSTUDY OF POTENTIAL COST REDUCTIONS RESULTING FROM SUPER-LARGE-SCALE MANUFACTURING OF PV MODULES
Link(MS Word 112 KB
AuthorsR. Arya, M. Keshner
DescriptionShort version of multi-GW production report
VenueNREL Solar Review
SourceHewlett Packard
Document TypeConference Papers (Word document)
Resource Date10/2004


Post Date02/08/2005
TitleTHE IMPROVED INTRINSIC STABILITY OF CDTE POLYCRYSTALLINE THIN FILM DEVICES
Link(PDF 137 KBDownload Acrobat Reader.
AuthorsD. Albin, et al.
DescriptionParametric studies of CdS/CdTe device stability.
VenueDOE/NREL Solar Review 2004
SourceNational Renewable Energy Laboratory
Document TypeConference Papers (Adobe Postscript file)
Resource Date10/2004


Post Date02/08/2005
TitleTHERMAL ADMITTANCE SPECTROSCOPY STUDY: PRELIMINARY OBSERVATIONS OF A MEYER-NELDEL RELATIONSHIP IN CDTE DEVICES
Link(PDF 689 KBDownload Acrobat Reader.
AuthorsK. L. Barth, R. A. Enzenroth, W. S. Sampath
DescriptionCdTe analysis.
VenueIEEE
SourceColorado School of Mines, Golden, CO
Document TypeConference Papers (Adobe Postscript file)
Resource Date10/2004


Post Date02/10/2005
TitleCHARACTERISTICS OF CDTE FILMS OF DIFFERENT COMPOSITIONSFABRICATED BY CMBD
Link(MS Word 965 KB
AuthorsT. M. Razykov, et al.
DescriptionCdTe films with near stoichiometric compositions and cadmium-rich compositions were fabricated by a novel low-cost chemical molecular beam deposition (CMBD) technique at atmospheric pressure under hydrogen or nitrogen gas flow. X-ray diffraction analysis and scanning electron microscopy studies show different grain growth by CMBD depending on the composition of samples. Those grown with cadmium rich compositions were of poor quality with large discontinuous island structures. On the other hand, samples grown with near stoichiometric compositions were polycrystalline with large grain size and uniform thickness. Additionally, films grown under nitrogen flow contained a cadmium tellurium oxide phase while those grown under hydrogen did not.
Venue31st IEEE PVSC
SourceUzbek Academy of Sciences
Document TypeConference Papers (Word document)
Resource Date10/2004


Post Date02/08/2005
TitleCONSISTENT PROCESSING AND LONG TERM STABILITY OF CDTE DEVICES
Link(PDF 1.4 MBDownload Acrobat Reader.
AuthorsK. L. Barth, R. A. Enzenroth, W. S. Sampath
DescriptionA technology for processing of thin film CdS/CdTe devices has been developed in our laboratory. This inline, continuous, pilot system enables unique processing steps and conditions not available with batch processing and allows the fabrication of a large number of devices. Results from the pilot scale system are applicable to systems processing larger areas.
VenueIEEE
SourceColorado State University
Document TypeConference Papers (Adobe Postscript file)
Resource Date10/2004


Post Date02/09/2005
TitlePHYSICAL MODES OF THIN-FILM PV DEGRADATION
Link(PDF 267 KBDownload Acrobat Reader.
AuthorsV. G. Karpov, et al.
DescriptionWe discuss physical modes of degradation related to the small thickness and lack of crystallinity in thin-film PV. We discriminate between 1) uniform material degradation through defect generation, light-induced diffusion, and electro-migration; 2) nonuniform degradation through ohmic or non-ohmic shunts; 3) metal contact deterioration. The first can equally apply to bulk and thin-film PV. Two others are specific to thin-film PV.
VenueIEEE
SourceUniversity of Toledo
Document TypeConference Papers (Adobe Postscript file)
Resource Date10/2004


Post Date02/08/2005
TitleINTRODUCTION OF CU IN CDS AND ITS EFFECT ON CDTE SOLAR CELLS
Link(MS Word 130 KB
AuthorsK. Barri, et al.
DescriptionThe use of copper during the fabrication of CdTe solar cells is a common feature for nearly all processing schemes developed for these devices. Copper is typically introduced in CdTe during the application of the back electrode, to enhance device performance by facilitating the formation of an ohmic back contact. However, Cu has also been associated with observed instability in CdTe. For this work, although Cu was utilized during the cell fabrication process, it was eliminated from the back contact formation step, and instead introduced in the CdS film prior to the deposition of the CdTe. The only fabrication step, where Cu was intentionally introduced, was subsequent to the CdS deposition. Both plain graphite and Sb2Te3/Mo were used as back contacts. Solar cell results suggested that ohmic contacts to CdTe can be attained with undoped graphite as the back electrode. For devices contacted with plain graphite VOC's and FF's in the range of 800-830 mV and 63-67% have been obtained. For Sb2Te3-contacted cells, the incorporation of Cu in CdS has lead to a significant increase in performance even though a back barrier was present in these cells.
VenueIEEE
SourcesNational Renewable Energy Laboratory; University of South Florida, Tampa
Document TypeConference Papers (Word document)
Resource Date10/2004


Post Date02/09/2005
TitleRF SPUTTER ETCH AS A SURFACE CLEANING PROCESS FOR CDTE SOLAR CELLS
Link(MS Word 171 KB
AuthorsV. Viswanathan, et al.
DescriptionThe primary objective of this work is to investigate the potential of an alternative dry, vacuum-based process, as a surface modification step for CdTe prior to the application of the back contact electrode. RF-sputter etch has been used as an alternative surface cleaning process. The process was optimized for the type of etchant gas, pressure, time, and sputter power. Solar cells exhibited VOC's greater than 830 mV and FF's in the high 60's. This performance demonstrates the potential of this process for the development of an all-dry vacuum based CdTe technology.
VenueIEEE
SourceUniversity of South Florida, Tampa
Document TypeConference Papers (Word document)
Resource Date10/2004


Post Date02/09/2005
TitleTHE INFLUENCE OF VARIOUS FRONT CONTACT MATERIALS ON THE PERFORMANCE OF CDTE SOLAR CELLS
Link(MS Word 201 KB
AuthorsR. Mamazza, et al.
DescriptionThe use of a resistive, or buffer, layer in the front con-tact structure of CdTe solar cells has been known to improve solar cell performance, in particular when the CdS thickness is relatively small. This paper reviews the performance of CdTe solar cells fabricated on various front contact bi-layer combinations. Conductive (low-r) trans-parent oxides utilized for this work include SnO2:F, Cd2SnO4 and ITO; resistive (high-r) transparent oxides include SnO2, In2O3, and Zn2SnO4.  All high-r layers were found to be effective within a range of processing condi-tions and process/device characteristics. Buffer layers of Zn-Sn-O appear to be the most promising high-? films for the fabrication of CdTe cells with small CdS thickness without compromising the VOC and FF.
VenueIEEE PVSC
SourceUniversity of South Florida, Tampa
Document TypeConference Papers (Word document)
Resource Date10/2004


Post Date02/11/2005
TitleEXPERIMENTAL INVESTIGATION OF EMISSIONS AND REDISTRIBUTION OF ELEMENTS IN CDTE PV MODULES DURING FIRES
Link(PDF 246 KBDownload Acrobat Reader.
AuthorsV. Fthenakis, et al.
DescriptionThis study is based on glass-glass CdTe PV modules which are the only ones in the market. Pieces of commercial CdTe photovoltaic (PV) modules, sizes 3.8 cm by 30.5 cm, were heated to temperatures up to 1100ºC to simulate exposure to residential and commercial building fires. The temperature rate and duration in these experiments were defined according to standard UL and ASTM test protocols. Three different types of analysis were performed: measurements of sample weight loss as a function of temperature; analyses of Cd in the fire emissions; and analysis of Cd distribution in the molten glass, using Synchrotron x-ray fluorescence microprobe. It was found that a small amount of cadmium compounds (0.4 to 0.6% of the Cd content) was carried to the edges by the flow of EVA decomposition products. The pathway for this loss was through the perimeter of the sample before the two sheets of glass fused together. In actual size PV modules, the ratio of perimeter to area is 13.5 times smaller; thus the actual Cd loss during fires would be insignificant (<0.04% of the Cd content).
VenueEuropean PV Solar Energy Conference, Paris, France, June 7-11, 2004; Paper 5BV.1.32
SourceBrookhaven National Laboratory
Document TypeConference Papers (Adobe Postscript file)
Resource Date06/2004


Post Date02/09/2005
TitleTHE STATUS OF AND CHALLENGES IN CDTE THIN-FILM SOLAR-CELL TECHNOLOGY
Link(PDF 160 KBDownload Acrobat Reader.
AuthorA. Compaan
DescriptionPolycrystalline CdTe thin- film solar cells have shown high potential for low cost, large-area module fabrication. But successful large-scale commercial production has been elusive. Fabrication of the basic n-CdS / p-CdTe heterojunction is possible by a wide variety of methods, including close-spaced sublimation, vapor-transport deposition, electrodeposition, chemical bath deposition, and magnetron sputtering. An overview of these methods is presented as well as the role of the postdeposition "activation" treatment using CdCl2.
VenueSpring 2004 MRS Symp. Amorphous and Nanocrystalline Silicon Science and Technology Proceedings to appear as MRS Symp. Proc.
SourceUniversity of Toledo
Document TypeConference Papers (Adobe Postscript file)
Resource Date06/2004


Post Date02/14/2005
TitleCIGS J-V DISTORTION IN THE ABSENCE OF BLUE PHOTONS
Link(MS Word 158 KB
AuthorsA. O. Pudov, et al.
DescriptionCommon buffer materials used with CuInGaSe2 (CIGS) absorbers produce conduction-band barriers that may significantly distort the current-voltage curves, especially when short-wavelength photons are excluded from the illumination spectrum. Earlier work documented this effect for CuInSe2 (CIS) absorbers (band gap near 1.0 eV) with CdS buffers. Higher band-gap (~1.15 eV) CIGS absorbers show little or no distortion with CdS buffer layers. However, wider band-gap (lower electron affinity) ZnS(O,OH) or InS(O,OH) buffers, prepared by chemical-bath deposition, clearly show the J-V distortion. The distortions have a turn-on time constant the order of a minute and turn-off time constant the order of a day, and they correlate with major variations in apparent quantum efficiency measured with varying intensity and spectral content of bias light. The results are consistent with a conduction-band spike barrier that increases with buffer band gap and is larger when the electron concentration in the buffer is small.
VenueEMRS
SourceColorado State University
Document TypeConference Papers (Word document)
Resource Date2004


Post Date02/08/2005
TitleCOPPER INCLUSION AND MIGRATION FROM THE BACK CONTACT IN CDTE SOLAR CELLS
Link(MS Word 791 KB
AuthorsC. R. Corwine, et al.
DescriptionMetallic back contacts to CdS/CdTe solar cells will in general form Schottky barriers. Better performance is achieved with the inclusion of Cu in the back contact. This study uses current-voltage, capacitance-voltage, and laser beam induced current measurements to analyze as-deposited CdS/CdTe solar cells prepared with varying back contact Cu amounts and to evaluate changes in cell performance following elevated-temperature stress. A simple model is proposed to explain both the observed differences in device behavior as copper is added or removed from the contact region, and how copper movement depends on electrical bias.
VenueDraft
SourceColorado State University
Document TypeConference Papers (Word document)
Resource Date2004


Post Date02/07/2005
TitlePOLYCRYSTALLINE THIN-FILM PHOTOVOLTAIC TECHNOLOGIES: PROGRESS AND TECHNICAL ISSUES
Link(PDF 370 KBDownload Acrobat Reader.
AuthorH. S. Ullal
DescriptionPolycrystalline thin-film materials based on copper indium diselenide (CuInSe2, CIS) and cadmium telluride (CdTe) are promising thin-film solar cells for various power and specialty applications. Impressive results have been obtained in the past few years for both thin-film copper indium gallium diselenide (CIGS) solar cells and thin-film CdTe solar cells. NCPV/NREL scientists have achieved world-record, total-area efficiencies of 19.3% for a thin-film CIGS solar cell and 16.5% for thin-film CdTe solar cell. A number of technical R&D issues related to CIS and CdTe have been identified. Thin-film power module efficiencies up to 13.4% has been achieved thus far. Tremendous progress has been made in the technology development for module fabrication, and multi-megawatt manufacturing facilities are coming on line with expansion plans in the next few years. Several 40-480 kW polycrystalline thin-film, grid-connected PV arrays have been deployed worldwide. Hot and humid testing is also under way to validate the long-term reliability of these emerging thin-film power products. The U.S. thin-film production (amorphous silicon [a-Si], CIS, CdTe) is expected to exceed 50 MW by the end of 2005.
VenuePVSEC 19
SourceNational Renewable Energy Laboratory
Document TypeConference Papers (Adobe Postscript file)
Resource Date2004


Post Date02/09/2005
TitleCONTINUOUS, IN-LINE PROCESSING OF CDS/CDTE DEVICES: PROGRESS TOWARDS CONSISTENT STABILITY
Link(PDF 98 KBDownload Acrobat Reader.
AuthorsK. L. Barth, R. A. Enzenroth, W. S. Sampath
DescriptionTwo results pertaining to CdTe device stability are presented here: 1) The process conditions, particularly the CdCl 2 treatment, have a significant effect on device stability and 2) a saturation in the loss of efficiency over time in accelerated indoor stress has been observed for a large number of devices. CdTe, degradation, fabrication...
VenueEuroPV
SourceColorado State University
Document TypeConference Papers (Adobe Postscript file)
Resource Date2004


Post Date02/09/2005
TitleSTABILIZATION OF HIGH-EFFICIENCY CDTE PHOTOVOLTAIC MODULES IN CONTROLLED INDOOR LIGHT SOAKING
Link(PDF 330 KBDownload Acrobat Reader.
AuthorsD. Cunningham, J. Pruett, J. A. del Cueto
DescriptionThe performance and stabilization of large-area, high-efficiency 9%, CdTe photovoltaic (PV) modules maintained under controlled light-soaking nominally at 800 Watts/m2 irradiance and 65°C module temperature are investigated. Degradation of module performance occurs predominantly in the first few hundred hours of exposure under these conditions; these symptoms included losses in fill factor (FF), open-circuit voltage (Voc), and short-circuit current (Isc), which amount to between 7% and 15% total loss in performance. Higher stabilized performance was achieved with lower copper content in the back contact. Transient effects in module V...
Venue
SourcesBP Solar; National Renewable Energy Laboratory
Document TypeConference Papers (Adobe Postscript file)
Resource Date2004


Post Date02/08/2005
TitleCDTE BACK CONTACT: RESPONSE TO COPPER ADDITION AND OUT-DIFFUSION
Link(PDF 345 KBDownload Acrobat Reader.
AuthorsC. Jenkins, et al.
DescriptionThe back-contact barrier of CdTe solar cells plays an important role in cell operation, and it is substantially altered by both the amount of copper used in forming the contact and the movement of copper away from the contact during elevated temperature stress. It is shown that a simple model can explain the differences in current-voltage curves, cell uniformity, and capacitance as copper is added or moved out of the contact region, as well as the dependence of copper movement on electrical bias.
Venuedraft
SourceColorado State University
Document TypeConference Papers (Adobe Postscript file)
Resource Date2004


Post Date02/09/2005
TitleCU K-EDGE X-RAY FINE STRUCTURE CHANGES IN CDTE WITH CDCL2 PROCESSING
Link(PDF 86 KBDownload Acrobat Reader.
AuthorsA. Compaan, X. Liu, et al.
DescriptionMR-CAT beamline of the Advanced Photon Source at Argonne National Laboratory to study the fine structure in the Cu K-edge x-ray absorption in 3 mm thick polycrystalline films of CdTe on fused silica. 4 nm of evaporated Cu is diffused either with or without prior vapor CdCl2 treatments in dry air. Cu absorption is monitored through the Cu K a fluorescence using a 13 element Ge detector. The radial distribution junction inferred from the absorption fine structure indicates predominantly Cu2Te when Cu is diffused into the as deposited CdTe film but indicates a CuxO environment when Cu is diffused after the vapor CdCl2 treatment.
VenueEuropean MRS
SourceUniversity of Toledo
Document TypeConference Papers (Adobe Postscript file)
Resource Date2004


Post Date02/07/2005
TitleTECHNOLOGY AND MARKET CHALLENGES TO MAINSTREAM THIN-FILM PHOTOVOLTAIC MODULES AND APPLICATIONS
Link(PDF 276 KBDownload Acrobat Reader.
AuthorR. Arya
DescriptionTechnology and manufacturing advances over the past 25 years has led to widespread commercial use of thin film modules in many consumer applications. The three leading thin film solar module technologies are - amorphous silicon alloys (a-Si), copper indium diselenide alloys (CIGS), and cadmium telluride CdTe). These three technologies have demonstrated solar cells with efficiencies ~13% (a-Si), ~19% (CIGS), and ~16.5% (CdTe) respectively. Large area power modules are in various stages of initial production with these technologies and the module performance is in the 6%-11% range. Several manufacturing plants are in operation with plant capacities ranging from 3 MW to 30 MW. These plants are continuously increasing production with the present annual production of 1 MW to 5 MW. Technical challenges lie ahead in improving the module performance by reducing the gap between R&D cells and manufactured products so that they can successfully compete with crystalline silicon modules. Reliability of thin film modules in systems has been demonstrated with all three technologies with a fair degree of success. Several 1-480 kW grid-connected thin film module arrays are in deployment worldwide. Thin film modules are finding increasing acceptance for BIPV applications like roofs, facades, awnings etc. used in residential and commercial buildings. The cost of modules and market acceptance with new technologies still remains a major challenge to successful penetration of mainstream photovoltaic markets.
Venue
SourceN/A
Document TypeConference Papers (Adobe Postscript file)
Resource Date2004


Post Date02/10/2005
TitleQUANTUM EFFICIENCY OF CDTE SOLAR CELLS IN FORWARD BIAS
Link(PDF 234 KBDownload Acrobat Reader.
AuthorsM. Gloeckler, J. R. Sites
DescriptionThe quantum efficiency of a CdS/CdTe solar cell is measured under forward voltage, the measurement is likely affected by several factors including (1) the voltage dependence of the collection efficiency, (2) series resistance of the cell and instrumentation, (3) the electrical barrier of the back contact, (4) photoconductive effects in the CdS and CdTe, and (5) any secondary barrier in the primary junction. Each of these effects has a distinct signature, but without careful attention to these signatures, misinterpretation is possible and perhaps common. The approach here is to numerically simulate effect (1), and then progressively add effects (2), (3), (4), and (5). In each case, we show the characteristic signature of the apparent quantum efficiency when voltage is varied, we discuss the effect of bias light on the quantum efficiency measurement, we compare when possible with analytical modeling, and we show the impact of each effect on the cell's current-voltage curves, particularly the light/dark crossover. Although the presentation will be specific to CdTe cells, the principles should at least in part apply to other solar cells as well.
VenueParis 2004
SourceColorado State University
Document TypeConference Papers (Adobe Postscript file)
Resource Date2004


Post Date02/09/2005
TitleNUMERICAL MODELING OF CIGS AND CDTE SOLAR CELLS: SETTING THE BASELINE
Link(MS Word 669 KB
AuthorsM. Gloeckler, et al.
DescriptionNumerical modeling of polycrystalline thin-film solar cells is an important strategy to test the viability of proposed physical explanations and to predict the effect of physical changes on cell performance. In general, this must be done with only partial knowledge of input parameters. Nevertheless, for consistent comparisons between laboratories, it is extremely useful to have a common starting point, or baseline. We will discuss guidelines that should be considered assigning input parameters for numerical modeling. Consequently specific baseline parameters for CIGS and CdTe are proposed. The modeling results for these baseline cases are presented and it is discussed how the baseline cases serve to describe some of the most important complications that are often found in experimental CIGS and CdTe solar cells.
VenueIEEE
SourceColorado State University
Document TypeConference Papers (Word document)
Resource Date2004


Post Date02/04/2005
TitlePOLYCRYSTALLINE THIN-FILM PHOTOVOLTAIC TECHNOLOGIES: PROGRESS AND TECHNICAL ISSUES
Link(MS Word 1.5 MB
AuthorH. S. Ullal
DescriptionPolycrystalline thin-film materials based on copper indium diselenide (CuInSe2, CIS) and cadmium telluride (CdTe) are promising thin-film solar cells for various power and specialty applications. Impressive results have been obtained in the past few years for both thin-film copper indium gallium diselenide (CIGS) solar cells and thin-film CdTe solar cells. NCPV/NREL scientists have achieved world-record, total-area efficiencies of 19.3% for a thin-film CIGS solar cell and 16.5% for thin-film CdTe solar cell. A number of technical R&D issues related to CIS and CdTe have been identified. Thin-film power module efficiencies up to 13.4% has been achieved thus far. Tremendous progress has been made in the technology development for module fabrication, and multi-megawatt manufacturing facilities are coming on line with expansion plans in the next few years. Several 40-480 kW polycrystalline thin-film, grid-connected PV arrays have been deployed worldwide. Hot and humid testing is also under way to validate the long-term reliability of these emerging thin-film power products. The U.S. thin-film production (amorphous silicon [a-Si], CIS, CdTe) is expected to exceed 50 MW by the end of 2005.
VenuePVSEC
SourceNational Renewable Energy Laboratory
Document TypeConference Papers (Word document)
Resource Date2004


Post Date02/08/2005
TitleCONTINUOUS, IN-LINE PROCESSING OF CDS/CDTE DEVICES: PROGRESS TOWARDS CONSISTENT STABILITY
Link(PDF 98 KBDownload Acrobat Reader.
AuthorsK. L. Barth, R. A. Enzenroth, W. S. Sampath
DescriptionA technology for continuous in-line processing of thin film CdS/CdTe devices has been developed in our laboratory. A CdTe PV device fabrication system has been operating for approximately 6 years and a full prototype manufacturing system for 16.5 x 16.5 inch substrates is under construction. Utilizing this technology, it has been demonstrated that at optimum process conditions good device stability (resistance to performance degradation) can be obtained. Two results pertaining to CdTe device stability are presented here: 1) The process conditions, particularly the CdCl2 treatment...
VenueEuroPV
SourceColorado State University
Document TypeConference Papers (Adobe Postscript file)
Resource Date2004


Post Date02/09/2005
TitleCU K-EDGE XAFS IN CDTE BEFORE AND AFTER TREATMENT WITH CDCL2
Link(PDF 204 KBDownload Acrobat Reader.
AuthorsX. Liu, et al.
DescriptionWe have used the fine structure in the Cu K-edge x-ray absorption spectrum to help elucidate the lattice location of Cu in polycrystalline, thin-film CdTe solar cells. In particular, we have studied how the typical CdCl2 vapor treatment in dry air changes the local environment of the Cu in CdTe. We find the Cu absorption spectrum to be similar to that of Cu2Te in the asdeposited CdTe film but to convert to a spectrum similar to Cu2O environment after the vapor CdCl2 treatment.
VenueMaterials Research Society Symposium Proceedings spring 2003, Symposium B "Compound Semiconductor Photovoltaics," paper B3.5
SourceUniversity of Toledo
Document TypeConference Papers (Adobe Postscript file)
Resource Date06/01/2003


Post Date02/09/2005
TitleTHE MESOSCALE PHYSICS OF LARGE-AREA PHOTOVOLTAICS
Link(PDF 252 KBDownload Acrobat Reader.
AuthorsV. G. Karpov, et al.
DescriptionRecent findings make the physics of large-area thin-film devices a distinctive field of its own, considerably different from that of microelectronics. We show that (i) large-area thin-film photovoltaic (PV) devices are intrinsically nonuniform in the lateral directions, (ii) the nonuniformity spans over microscopically large dimensions, which can vary dramatically (from microns to meters) depending on light intensity and bias, and (iii) the nonuniformity significantly impacts the device performance and stability. Our understanding suggests the concept of interfacial layer that blocks the nonuniformity effects and can be applied photo-electrochemically. This concept is experimentally verified.
Venue29th IEEE Osaka
SourceUniversity of Toledo
Document TypeConference Papers (Adobe Postscript file)
Resource Date05/16/2003


Post Date02/11/2005
TitleCDTE PV: REAL AND PERCEIVED EHS RISKS
Link(PDF 216 KBDownload Acrobat Reader.
AuthorsV. Fthenakis, K. Zweibel
DescriptionAs CdTe photovoltaics reached commercialization, questions were raised about potential cadmium emissions from CdTe PV modules. Some have attacked the CdTe PV technology as unavoidably polluting the environment, and made comparisons of hypothetical emissions from PV modules to cadmium emissions from coal-fired power plants. This paper gives an overview of the technical issues pertinent to these questions and further explores the potential of environmental, health, and safety (EHS) risks during production, use, and decommissioning of CdTe PV modules. The following issues are discussed: (a) the physical and toxicological properties of CdTe, (b) comparisons of Cd use in CdTe PV with its use in other technologies and products, and (c) the possibility of CdTe releases from PV modules. cells.
VenueNCPV and Solar Program Review Meeting 2003 NREL/CD-520-33586 Page 413
SourcesBrookhaven National Laboratory; National Renewable Energy Laboratory
Document TypeConference Papers (Adobe Postscript file)
Resource Date2003


Post Date02/09/2005
TitleMANUFACTURING AND TECHNOLOGY DEVELOPMENT PROGRAMS AT FIRST SOLAR
Link(PDF 334 KBDownload Acrobat Reader.
AuthorsA. Abken, et al.
Description
VenueNCPV and Solar Program Review

NREL/CD-520-33586

SourceFirst Solar, Toledo, OH
Document TypeConference Papers (Adobe Postscript file)
Resource Date2003


Post Date02/02/2005
TitleCOMPARISON OF ENERGY PRODUCTION AND PERFORMANCE FROM FLAT-PLATE PHOTOVOLTAIC MODULE TECHNOLOGIES DEPLOYED AT FIXED TILT
Link(PDF 206 KBDownload Acrobat Reader.
AuthorJ. A. del Cueto
Descriptionenergy rating by technology
Venue
SourceNational Renewable Energy Laboratory
Document TypeConference Papers (Adobe Postscript file)
Resource Date2003


Post Date02/07/2005
TitlePRACTICAL DOPING PRINCIPLES
Link(PDF 270 KBDownload Acrobat Reader.
AuthorA. Zunger
DescriptionDoping compound semiconductors.
VenueNREL DOE Solar Program Review Meeting 2003
SourceNational Renewable Energy Laboratory
Document TypeConference Papers (Adobe Postscript file)
Resource Date2003


Post Date02/07/2005
TitlePROGRESS IN U.S. PHOTOVOLTAICS: LOOKING BACK 30 YEARS AND LOOKING AHEAD 20
Link(PDF 310 KBDownload Acrobat Reader.
AuthorT. Surek
DescriptionTechnology and learning curve analysis of R&D.
VenueOsaka IEEE
SourceNational Renewable Energy Laboratory
Document TypeConference Papers (Adobe Postscript file)
Resource Date2003


Post Date02/09/2005
TitleTEMPERATURE-DEPENDENT ELECTROLUMINESCENCE FROM CDTE/CDS SOLAR CELLS
Link(PDF 87 KBDownload Acrobat Reader.
AuthorsK. J. Price, et al.
DescriptionElectroluminescence (EL) from polycrystalline CdTe/CdS solar cells was studied over the temperature range ? 30 C to 25 C. We are able to observe above-background EL at forward current densities as low as 3 mA/cm2, allowing us to explore the EL behavior at current-voltage regimes within the normal operating parameters of the device. The EL spectrum is very similar to the photoluminescence (PL) spectrum, and is independent of applied voltage. We show that the EL most likely originates from injected electron-hole recombination at the CdTe/CdS junction. The total EL intensity is found to vary as a power-law function of current...
VenueMRS 2003
SourceUniversity of Toledo
Document TypeConference Papers (Adobe Postscript file)
Resource Date2003


Post Date02/10/2005
TitlePERTURBATION OF COPPER SUBSTITUTIONAL DEFECT CONCENTRATIONS IN CDS/CDTE HETEROJUNCTION SOLAR CELL DEVICES
Link(PDF 565 KBDownload Acrobat Reader.
AuthorsD. Albin, et al.
DescriptionThe efficacy of implementing terrestrial-based photovoltaics is dictated by trade-offs in device performance, cost, and reliability. Presently, the highest efficiency polycrystalline CdS/CdTe superstrate solar cells utilize back contacts containing copper as an intentional dopant. Accelerated stress data correlates copper diffusion from this contact with performance degradation. Degradation at the device level exhibits two characteristic modes that are influenced by CdTe surface treatments prior to contacting. Rapid degradation associated with a rapidly decreasing open-circuit voltage can occur in cases where processing favors stoichiometric CdTe surfaces. Slower degradation associated with roll-over is typified by treatments favoring the presence of Te at the back contact. The chemical composition and extent of Te-rich contact interfaces is revealed by transmission electron microscopy. Deep-level transient spectroscopy of NP etched and non-etched devices show Te-rich conditions are necessary for the detection of deep-acceptor CuCd defect levels...
VenueProceedings of Symposium F, 2002 Spring Meeting of the Materials Research Society San Francisco, CA April 1-5, 2002
SourceNational Renewable Energy Laboratory
Document TypeConference Papers (Adobe Postscript file)
Resource Date05/2002


Post Date02/09/2005
TitleMICRONONUNIFORMITY EFFECTS IN THIN-FILM PHOTOVOLTAICS
Link(PDF 350 KBDownload Acrobat Reader.
AuthorsA. Compaan, V. G. Karpov, D. Shvydka
DescriptionWe discuss effects of micrononuniformities on thin-film photovoltaics. The key factors are the device large area and the presence of potential barriers. We model the nonuniformity effects in the terms of random microdiodes connected in parallel through a resistive electrode. The microdiodes of low open circuit voltages affect macroscopically large regions. They strongly reduce the device performance and induce its nonuniform degradation in several different modes. We support our predictions by experiments.
Venue2002 IEEE PVSC
SourceUniversity of Toledo
Document TypeConference Papers (Adobe Postscript file)
Resource Date2002


Post Date02/08/2005
TitleEXTERNAL BIAS EFFECT ON JUNCTION PHOTOLUMINESCENCE IN CDS/CDTE SOLAR CELLS
Link(PDF 421 KBDownload Acrobat Reader.
AuthorsA. Compaan, V. G. Karpov, D. Shvydka
DescriptionStudy photoluminescence (PL) from the CdS/CdTe solar-cell junction region. We observed that applied external bias V does not change the spectral shape of the PL signal, but significantly affects the integral PL intensity I(V). It increases with moderate forward bias, tends to saturate when V is above the open-circuit voltage and is suppressed for reverse bias.
VenueIEEE
SourceUniversity of Toledo
Document TypeConference Papers (Adobe Postscript file)
Resource Date2002


Post Date02/07/2005
TitlePV SOLAR ELECTRICITY: ONE AMONG THE NEW MILLENNIUM INDUSTRIES
Link(PDF 6.0 MBDownload Acrobat Reader.
AuthorW. Hoffmann
DescriptionABSTRACT: During recent years, solar electricity generation based on photovoltaics has developed into an industry at annual growth rates above 20%. Major market segments served by this industry comprise consumer applications, remote industrial systems, developing countries, and grid-connected systems. The potential in these markets supports sustained future growth, particularly for applications in developing countries and gridconnected systems in the industrial countries, where PV-generated electricity eventually will start to compete with peak grid power. Backed by price experience curves and a laboratory proven technology road map, a module turnover representing 100 billion worlwide can be extrapolated. A sustainable energy contribution to the worldwide energy mix in subsequent decades is foreseen as a result of competitive PV solar electricity applications.

Keywords: PV Market Growth ? 1: Strategy ? 2: Cost Reduction ? 3

Venue17th European Photovoltaic Solar Energy Conference, Munich, Germany, 22-26 October 2001
SourceRWE Schott
Document TypeConference Papers (Adobe Postscript file)
Resource Date10/2001


Post Date02/09/2005
TitleEFFECT OF CDTE THICKNESS REDUCTION IN HIGH EFFICIENCY CDS/CDTE SOLAR CELLS
Link(PDF 76 KBDownload Acrobat Reader.
AuthorsA. Gupta, et al.
DescriptionHigh efficiency CdTe solar cells are typically grown with CdTe thicknesses from 3 to 15 mm, although the thickness required for 90% absorption of the incident irradiation at 800 nm is only ~1 mm. In this paper, we present the effect of CdTe thickness reduction on the performance of CdS/CdTe solar cells in which both the CdS and CdTe films were grown by sputtering. We produced a series of cells with different CdTe thickness (from 0.5 to 3.0 mm), and held the CdS thickness and back-contact-processing constant. The effect of CdTe thickness reduction on the diffusion of CdS into CdTe was studied using optical absorption and x-ray diffraction techniques. Only slight decreases occur in open-circuit voltage, short-circuit current, and fill factor with decrease in CdTe film thickness to 1.0 µm. Almost 10% efficient cells were obtained with 1 mm CdTe. Below 1 mm, all cell parameters decrease more rapidly, including the red quantum efficiency.
VenueMat. Res. Soc. Symp. Proc. Vol. 668
SourceUniversity of Toledo
Document TypeConference Papers (Adobe Postscript file)
Resource Date2001


Post Date02/09/2005
TitlePRECONTACT SURFACE CHEMISTRY EFFECTS ON CDS/CDTE SOLAR CELL PERFORMANCE AND STABILITY
Link(PDF 76 KBDownload Acrobat Reader.
AuthorsD. Albin, S. E. Asher, D. Levi, et al.
Description
Venue28th IEEE PVSC
SourceNational Renewable Energy Laboratory
Document TypeConference Papers (Adobe Postscript file)
Resource Date10/2000


Post Date02/09/2005
TitleNONUNIFORM POWER GENERATION IN CDTE MODULES
Link(PDF 516 KBDownload Acrobat Reader.
AuthorsG. Dorer, R. Harju, V. G. Karpov
Description
VenueIEEE PVSC
SourceFirst Solar, Toledo, OH
Document TypeConference Papers (Adobe Postscript file)
Resource Date2000


Post Date02/11/2005
TitleHEALTH, SAFETY AND ENVIRONMENTAL ISSUES IN THIN FILM MANUFACTURING
Link(PDF 50 KBDownload Acrobat Reader.
AuthorsE. A. Alsema, et al.
DescriptionAn investigation is made of Health, Safety and Environmental (HSE) aspects for the manufacturing, use and decommissioning of CdTe, CIS and a-Si modules. Issues regarding energy requirements, resource availability, emissions of toxic materials, occupational health and safety and module waste treatment are reviewed. Waste streams in thin film module manufacturing are analyzed in detail and treatment methods are discussed. Finally the technological options for thin film module recycling are investigated. It is concluded that there are no serious HSE bottlenecks for upscaling to production levels of 500 MWp/yr and that adequate methods are available for treatment of the manufacturing wastes. However, on the longer term issues regarding CdTe and CIS module waste treatment, In and Te resource availibility and module recycling need to adressed. Appropriate recycling methods for CdTe and CIS modules do not exist at present but the problem is being adressed by the PV industry.
Venue
SourceUtrecht University
Document TypeConference Papers (Adobe Postscript file)
Resource Date2000


Post Date02/11/2005
TitleFIRST SOLAR'S CDTE MODULE MANUFACTURING EXPERIENCE; ENVIRONMENTAL, HEALTH AND SAFETY RESULTS
Link(PDF 203 KBDownload Acrobat Reader.
AuthorsJ. R. Bohland, K. Smigielski
DescriptionConsistent with First Solar's proactive cadmium-containing material management practices such as CdTe PV module recycling, this paper reviews our activities and results in preventing environmental exposures and human health risks associated with cadmium materials processing during module manufacturing. Industrial hygiene data for manufacturing activities are presented and engineering controls are discussed. Medical monitoring results comparing recently hired to long-term employees and smokers is reported. Environmental releases to air, water and land have been quantified.
Venue
SourceFirst Solar, Toledo, OH
Document TypeConference Papers (Adobe Postscript file)
Resource Date1999


Post Date02/09/2005
TitlePROGRESS TOWARD CDTE CELL LIFE PREDICTION
Link(PDF 1.9 MBDownload Acrobat Reader.
AuthorsG. J. Jorgensen, T. J. McMahon
DescriptionAcclerated environmental testing.
VenueNCPV PV Program Review 1999
SourceNational Renewable Energy Laboratory
Document TypeConference Papers (Adobe Postscript file)
Resource Date1999

Back to Top

Presentations


Post Date05/18/2006
TitleHIGH EFFICIENCY CDTE AND CIGS
Link(PowerPoint 28.8 MB
AuthorR. Noufi
DescriptionHighlights and challenges
VenueWCPEC4 oral
SourceNational Renewable Energy Laboratory
Document TypePresentation (Powerpoint presentation)
Resource Date05/2006


Post Date06/13/2006
TitleCDTE NATIONAL R&D TEAM MEETING 2006
Link(PDF 17.3 MBDownload Acrobat Reader.
AuthorH. S. Ullal
DescriptionThe presentations from the National R&D Team meeting and Voc Workshop; Large file!
VenueNational R&D Team meeting
SourceNational Renewable Energy Laboratory
Document TypePresentation (Adobe Postscript file)
Resource Date03/2006


Post Date12/08/2005
TitleELECTRONIC STATES THAT CONTROL THE PERFORMANCE OF CDTE SOLAR CELLS
Link(PowerPoint 1.1 MB
AuthorF. H. Seymour
DescriptionAdmittance spectroscopy, defect correlation
VenueNREL seminar Dec 7, 2005
SourceColorado School of Mines, Golden, CO
Document TypePresentation (Powerpoint presentation)
Resource Date12/07/2005


Post Date11/11/2005
TitleTHIN FILM PV PARTNERSHIP PROGRAM 2005
Link(PowerPoint 10.8 MB
AuthorK. Zweibel
DescriptionOverview of the purpose, strategies, and goals of the Thin Film Partnership Program, including updated module, BOS, and system cost projections for 2005 and 2020.
Venue2005 DOE Solar Review
SourceNational Renewable Energy Laboratory
Document TypePresentation (Powerpoint presentation)
Resource Date11/10/2005


Post Date11/11/2005
TitleADVANCES IN CDTE R&D AT NREL
Link(PowerPoint 1.5 MB
AuthorX. Wu
DescriptionSummary of efficiency, TCO, contact, and processing achievements in CdTe
Venue

2005 DOE Solar Review

SourceNational Renewable Energy Laboratory
Document TypePresentation (Powerpoint presentation)
Resource Date11/2005


Post Date11/11/2005
TitleUNDERSTANDING THE PHYSICS OF CDS PV
Link(PowerPoint 3.2 MB
AuthorV. G. Karpov
Descriptionpiezo electric effect discussed
Venue2005 DOE Solar Review
SourceUniversity of Toledo
Document TypePresentation (Powerpoint presentation)
Resource Date11/2005


Post Date11/18/2005
TitleHOT AND HUMID THIN FILM MODULE TESTING IN FLORIDA
Link(JPG 1.2 MB
AuthorN. G. Dhere
Descriptionvarious arrays are tested
VenueDOE Solar Review 2005 poster
SourceFLorida Solar Energy Center
Document TypePresentation (JPG image)
Resource Date11/2005


Post Date11/17/2005
TitleTHIN CDTE CELLS AND HIGH THROUGHPUT PROCESSING
Link(PowerPoint 3.0 MB
AuthorB. E. McCandless
Description

under 1 micron CdTe; fast deposition

VenueSolar Review 2005
SourceUniversity of Delaware
Document TypePresentation (Powerpoint presentation)
Resource Date11/2005


Post Date11/17/2005
TitleTECHNOLOGY IN SUPPORT OF THIN FILM CDTE PV MODULE MANUFACTURING
Link(PowerPoint 9.6 MB
AuthorP. V. Meyers
Descriptionstatus of First Solar 2005
VenueDOE Solar Review 2005
SourceFirst Solar, Toledo, OH
Document TypePresentation (Powerpoint presentation)
Resource Date11/2005


Post Date11/04/2005
TitlePROGRESS IN CONTINUOUS IN-LINE CDS/CDTE DEPOSITION
Link(PowerPoint 3.9 MB
AuthorW. S. Sampath
DescriptionProgress at CSU AVA Technologies in 2005
VenueDOE Solar Review Meeting
SourcesAVA Technologies; Colorado State University
Document TypePresentation (Powerpoint presentation)
Resource Date11/2005


Post Date11/23/2005
TitleNANOSCALE-DESIGNED CERAMIC FILMS
Link(PDF 1.9 MBDownload Acrobat Reader.
AuthorS. Sambasivan
Descriptionthermal barriers, conformal alumina films, epitaxial oxide growth
Venue

Nanocommerce 2004, Chicago

SourceApplied thin films
Document TypePresentation (Adobe Postscript file)
Resource Date10/2005


Post Date09/02/2005
TitlePV PAST THE TIPPING POINT
Link(PowerPoint 31.8 MB
AuthorK. Zweibel
DescriptionPhotovoltaics is growing rapidly, coming down in cost, and technical progress is substantial. We can be assured that PV costs will come down enough to provide electricity at an energy signifiant level.
VenuePresntation at NREL to Norwegian StudyTour sponsored by CSM August 31, 2005
SourceNational Renewable Energy Laboratory
Document TypePresentation (Powerpoint presentation)
Resource Date08/31/2005


Post Date07/28/2005
Title2002 TO 2005 THIN FILM PARTNERSHIP BUDGET TRENDS
Link(PowerPoint 38 KB
AuthorK. Zweibel
DescriptionBudget in thin films for subcontracts is down 36% since 2002.
Venue
SourceNational Renewable Energy Laboratory
Document TypePresentation (Powerpoint presentation)
Resource Date07/2005


Post Date06/14/2005
TitleINTEGRATED SYSTEMS FOR SOLAR RESEARCH: DAISY-SOL
Link(PDF 477 KBDownload Acrobat Reader.
AuthorsJ. Fritsche, W. Jaegermann
DescriptionSetup CSS-CdTe CSS-CdS Chem. all in-situ solar cell manufacturing 2 dynamic CSS-chambers UHV-activation (in construction) backcontact formation (evaporation, sputtering) in-situ XPS/UPS-characterisation Rms [nm]
Venue20th EU PVSC, Barcelona, presentation
SourceTechnische Universitat Darmstadt
Document TypePresentation (Adobe Postscript file)
Resource Date06/2005


Post Date06/14/2005
TitleEMPIRICAL TUNING METHO FOR AS AND CL DOPING OF MOCVD CDTE
Link(PDF 2.9 MBDownload Acrobat Reader.
AuthorV. Barrioz
Descriptiondoping studies of MOCVD CdTe
Venue20th EU PVSC, Barcelona, SuperGen
SourceUniversity of Wales
Document TypePresentation (Adobe Postscript file)
Resource Date06/2005


Post Date05/10/2005
Title13.9% EFFICIENT TRANSPARENT CDTE CELL WITH NIR TRNASMISSION OF ABOUT 50%
Link(PowerPoint 1.8 MB
AuthorsX. Wu, et al.
Description
VenueCdTe National R&D Team
SourceNational Renewable Energy Laboratory
Document TypePresentation (Powerpoint presentation)
Resource Date05/06/2005


Post Date05/09/2005
TitleCOPPER AND BUFFER LAYER EFFECTS
Link(PowerPoint 13.5 MB
AuthorsD. Albin, S. Demetsu
Description
VenueCdTe R&D Team
SourcesColorado State University; National Renewable Energy Laboratory
Document TypePresentation (Powerpoint presentation)
Resource Date05/05/2005


Post Date05/09/2005
TitleBIFACIAL CDS/CDTE/ZNTE DEVICE CHARACTERIZATION
Link(PowerPoint 645 KB
AuthorsD. Desai, S. S. Hegedus
Description
VenueCdTe National R&D Team
SourceUniversity of Delaware
Document TypePresentation (Powerpoint presentation)
Resource Date05/05/2005


Post Date05/09/2005
TitleINFLUENCE OF BAND PROFILES ON TRANSPORT AND RECOMBINATION IN CDTE
Link(PowerPoint 2.4 MB
AuthorA. Fahrenbruch
Description
VenueCdTe R&D Team
SourceColorado State University
Document TypePresentation (Powerpoint presentation)
Resource Date05/05/2005


Post Date05/09/2005
TitleNONLINEAR SHUNTING IN CDTE
Link(PowerPoint 201 KB
AuthorsV. G. Karpov, D. Shvydka
Description
VenueCdTe R&D Team
SourceUniversity of Toledo
Document TypePresentation (Powerpoint presentation)
Resource Date05/05/2005


Post Date05/09/2005
TitlePROGRESS AT AVA TECHNOLOGIES
Link(PowerPoint 2.0 MB
AuthorsK. L. Barth, et al.
Description
VenueCdTe R&D Team
SourceAVA Technologies
Document TypePresentation (Powerpoint presentation)
Resource Date05/05/2005


Post Date05/09/2005
TitleHOW THIN FILM PV CAN BE DIFFERENT
Link(PowerPoint 122 KB
AuthorV. G. Karpov
Descriptiondifferent device models of CdTe cells, weak diodes, MIS, degradation
VenueCdTe R&D Team
SourceUniversity of Toledo
Document TypePresentation (Powerpoint presentation)
Resource Date05/05/2005


Post Date05/09/2005
TitleCDTE STABILITY SUBTEAM
Link(PowerPoint 911 KB
AuthorD. Albin
Description
VenueCdTe R&D Team
SourceNational Renewable Energy Laboratory
Document TypePresentation (Powerpoint presentation)
Resource Date05/05/2005


Post Date05/09/2005
TitleESTIMATION OF ACCELERATION FACTORS BY COMPARISON OF PERFORMANCE DURING ACCELERATED STRESS AND IN OUTDOOR CONDITIONS
Link(PowerPoint 188 KB
AuthorR. A. Enzenroth
Description
VenueCdTe R&D Team
SourceColorado State University
Document TypePresentation (Powerpoint presentation)
Resource Date05/05/2005


Post Date05/09/2005
TitleSTABILITY OF CDS/CDTE WITH AG AND NI BACK CONTACTS
Link(PowerPoint 2.4 MB
AuthorsD. Albin, A. Davies, S. Demetsu, T. J. McMahon, J. W. Pankow
Description
VenueCdTe R&D Team
SourcesColorado State University; National Renewable Energy Laboratory
Document TypePresentation (Powerpoint presentation)
Resource Date05/05/2005


Post Date05/09/2005
TitleCU AND CDCL2 INFLUENCE ON DEEP DEFECTS IN CDTE CELLS
Link(PowerPoint 285 KB
AuthorsD. Albin, V. Kaydanov, T. Ohno, F. H. Seymour
Description
VenueCdTe R&D Team
SourcesColorado School of Mines, Golden, CO; National Renewable Energy Laboratory
Document TypePresentation (Powerpoint presentation)
Resource Date05/05/2005


Post Date05/09/2005
TitleCONDUCTIVE ATOMIC FORCE MICROSCOPY APPLIED TO CDTE/CDS CELLS
Link(PowerPoint 3.2 MB
AuthorsH. Moutinho, et al.
Description
VenueCdTe R&D Team
SourceNational Renewable Energy Laboratory
Document TypePresentation (Powerpoint presentation)
Resource Date05/05/2005


Post Date05/09/2005
TitleCHOOSING DEFECT PROPERTIES FOR DEVICE MODELING
Link(PowerPoint 1.1 MB
AuthorA. Fahrenbruch
Description
VenueCdTe R&D Team
SourceColorado State University
Document TypePresentation (Powerpoint presentation)
Resource Date05/05/2005


Post Date05/09/2005
TitleLUMINESCENCE STUDIES ON CU AND O DEFECTS IN CRYSTALLINE AND THIN CDTE
Link(PDF 1.9 MBDownload Acrobat Reader.
AuthorsC. R. Corwine, et al.
Description
VenueMay 2005 CdTe National R&D Team meeting
SourcesColorado State University; National Renewable Energy Laboratory
Document TypePresentation (Adobe Postscript file)
Resource Date05/05/2005


Post Date05/09/2005
TitleMATERIALS CHEMISTRY AND ANALYSIS
Link(PowerPoint 47 KB
AuthorB. E. McCandless
Description
VenueCdTe R&D Team
SourceUniversity of Delaware
Document TypePresentation (Powerpoint presentation)
Resource Date05/05/2005


Post Date05/09/2005
TitleCDS:CU AND BUFFER LAYERS
Link(PowerPoint 496 KB
AuthorsC. S. Ferekides, et al.
Description
VenueCdTe R&D Team
SourceUniversity of South Florida, Tampa
Document TypePresentation (Powerpoint presentation)
Resource Date05/05/2005


Post Date05/11/2005
TitleSOLAR FIELDS, LLC
Link(PowerPoint 1.2 MB
AuthorK. Kormanyos
DescriptionIntroduction to status and plans
VenueNational CdTe R&D Meeting
SourceSolar Fields
Document TypePresentation (Powerpoint presentation)
Resource Date05/05/2005


Post Date05/09/2005
TitleCDS/CDTE THICKNESS AND O2 EFFECTS ON STABILITY
Link(PowerPoint 1.5 MB
AuthorsD. Albin, S. Demetsu, T. J. McMahon
Description
VenueCdTe R&D Team
SourcesColorado State University; National Renewable Energy Laboratory
Document TypePresentation (Powerpoint presentation)
Resource Date05/05/2005


Post Date05/09/2005
TitleEFFECT OF APPLIED BIAS DURING STRESS: OLD AND NEW RESULTS FOCUSING ON CU CONTACT
Link(PowerPoint 706 KB
AuthorsS. S. Hegedus, et al.
Description
VenueCdTe R&D Team
SourceUniversity of Delaware
Document TypePresentation (Powerpoint presentation)
Resource Date05/05/2005


Post Date05/09/2005
TitleADVANCES IN CONTINUOUS IN-LINE PROCESSING OF CDTE PV DEVICES
Link(PowerPoint 1.7 MB
AuthorsK. L. Barth, R. A. Enzenroth, W. S. Sampath
Description
VenueCdTe R&D Team
SourceColorado State University
Document TypePresentation (Powerpoint presentation)
Resource Date05/05/2005


Post Date05/09/2005
TitlePL STUDIES OF CDTE CRYSTALS ION-IMPLANTED WITH CL, CU, OR P
Link(PowerPoint 285 KB
AuthorsL. Gorrell, S. Liu
Description
VenueCdTe R&D Team
SourceUniversity of Toledo
Document TypePresentation (Powerpoint presentation)
Resource Date05/05/2005


Post Date05/09/2005
TitleX-RAY FINE STRUCTURE OF CU IN SPUTTERED CDTE (OR WHERE DOES THE CU GO?)
Link(PowerPoint 1.1 MB
AuthorsS. Liu, et al.
Description
VenueCdTe R&D Team
SourceUniversity of Toledo
Document TypePresentation (Powerpoint presentation)
Resource Date05/05/2005


Post Date05/09/2005
TitleSENSITIVITY OF THIN FILM CDTE DEVICE OPERATION TO PROCESSING CHEMISTRY
Link(PowerPoint 1.5 MB
AuthorB. E. McCandless
Description
VenueCdTe R&D Team
SourceUniversity of Delaware
Document TypePresentation (Powerpoint presentation)
Resource Date05/05/2005


Post Date05/09/2005
TitleSTEADY STATE PHOTOCAPACITANCE OF CDTE CELLS
Link(PowerPoint 561 KB
AuthorR. A. Enzenroth
Description
VenueCdTe R&D Team
SourceColorado State University
Document TypePresentation (Powerpoint presentation)
Resource Date05/05/2005


Post Date05/09/2005
TitleSTABILITY STUDIES WITH CSU AND UT CDTE CELLS
Link(PowerPoint 4.4 MB
AuthorL. Olsen
Description
VenueCdTe R&D Team
SourcePacific Northwest National Lab (PNNL)
Document TypePresentation (Powerpoint presentation)
Resource Date05/05/2005


Post Date05/09/2005
TitleREAL-TIME, IN-SITU ELLIPSOMETRY OF CDTE FILM GROWTH AND SOLAR CELL ETCH-BACK
Link(PowerPoint 5.2 MB
AuthorR. W. Collins
Description
VenueCdTe National R&D Team meeting
SourceUniversity of Toledo
Document TypePresentation (Powerpoint presentation)
Resource Date05/05/2005


Post Date05/09/2005
TitlePIEZO EFFECT IN CDS/CDTE SOLAR CELLS
Link(PowerPoint 1.4 MB
AuthorsD. Shvydka, et al.
Description
VenueCdTe R&D Team
SourceUniversity of Toledo
Document TypePresentation (Powerpoint presentation)
Resource Date05/05/2005


Post Date03/17/2005
TitleALTERNATIVE JUNCTION SUBTEAM
Link(PowerPoint 851 KB
AuthorJ. R. Sites
Descriptioncomparing different junction partners and absorber band gaps
VenueCIS National R&D Team Meeting March 2005 NREL
SourceColorado State University
Document TypePresentation (Powerpoint presentation)
Resource Date03/08/2005


Post Date02/09/2005
TitleNREL CDTE RESEARCH
Link(PowerPoint 6.3 MB
AuthorsT. Gessert, et al.
Description
VenueDOE Solar Review
SourceNational Renewable Energy Laboratory
Document TypePresentation (Powerpoint presentation)
Resource Date10/28/2004


Post Date02/09/2005
TitleHIGH THROUGHPUT PROCESSING OF STABLE CDTE/CDS SOLAR CELLS
Link(PowerPoint 2.0 MB
AuthorsB. E. McCandless, et al.
Description
VenueDOE Solar Review 2004
SourceUniversity of Delaware
Document TypePresentation (Powerpoint presentation)
Resource Date10/26/2004


Post Date02/10/2005
TitleTOWARD A TANDEM CELL WITH ALL II-VI SEMICONDUCTORS BY MAGNETRON SPUTTERING
Link(PDF 1.2 MBDownload Acrobat Reader.
AuthorsA. Compaan, et al.
DescriptionCdTe/HgCdTe
VenueDOE Solar Review
SourceUniversity of Toledo
Document TypePresentation (Adobe Postscript file)
Resource Date10/25/2004


Post Date02/07/2005
TitleTHIN FILMS AND THE SYSTEM DRIVEN APPROACH
Link(PowerPoint 1.0 MB
AuthorK. Zweibel
DescriptionCost analysis of thin films for semiconductor, encapusulation, layer thickness, and efficiency.
VenueDOE and NREL Solar Review Meeting 2004
SourceNational Renewable Energy Laboratory
Document TypePresentation (Powerpoint presentation)
Resource Date10/2004


Post Date02/09/2005
TitleLARGE AREA THIN FILM DEVICES: NONUNIFORMITIES, INTERFACIAL LAYESR, REACG-THROUGH EFFECTS
Link(PowerPoint 884 KB
AuthorV. G. Karpov
Description
VenueDOE Solar Review
SourceUniversity of Toledo
Document TypePresentation (Powerpoint presentation)
Resource Date10/2004


Post Date02/07/2005
Title2ND GENERATION THIN FILMS
Link(PowerPoint 8.9 MB
AuthorK. Zweibel
DescriptionPotential of CIS, CdTe, and a-Si thin films.
VenueRice University Solar Energy Workshop
SourceNational Renewable Energy Laboratory
Document TypePresentation (Powerpoint presentation)
Resource Date09/2004


Post Date04/22/2005
TitleADHESION TESTS OF CANDIDATE BACKSHEET AND ENCAPSULANTS
Link(PDF 425 KBDownload Acrobat Reader.
AuthorsG. J. Jorgensen, J. A. del Cueto, et al.
DescriptionPull tests of various candidate replacements for EVA
VenueThin film module reliability national team meeting
SourceNational Renewable Energy Laboratory
Document TypePresentation (Adobe Postscript file)
Resource Date06/2004


Post Date04/22/2005
TitleMOISTURE INGRESS PROTECTION BY COMBINED BACKSHEET AND ENCAPSULANT CONSTRUCTIONS
Link(PDF 1.7 MBDownload Acrobat Reader.
AuthorsG. J. Jorgensen, M. Kempe, C. Kennedy, K. Terwilliger
DescriptionWVTR, PET, EVA, BRP, TruSeal
VenueThin Film Module Reliability National Team Meeting
SourceNational Renewable Energy Laboratory
Document TypePresentation (Adobe Postscript file)
Resource Date06/2004


Post Date04/22/2005
TitleEFFECTS OF MOISTURE INGRESS ON PV MODULES
Link(PDF 528 KBDownload Acrobat Reader.
AuthorM. Kempe
DescriptionMeasuring the rate water vapor moves through EVA from the edge and the back
VenueThin Film Module Reliability National Team Meeting
SourceNational Renewable Energy Laboratory
Document TypePresentation (Adobe Postscript file)
Resource Date06/2004


Post Date04/22/2005
TitleLEAKAGE CURRENTS AND HIGH-VOLTAGE THIN FILM MODULES
Link(PDF 1.1 MBDownload Acrobat Reader.
AuthorN. G. Dhere
DescriptionFSEC testing of outdoor thin film arrays
VenueThin Film Module Reliability Team Meeting
SourceFLorida Solar Energy Center
Document TypePresentation (Adobe Postscript file)
Resource Date06/2004


Post Date04/22/2005
TitlePAST AND PREDICTED THIN FILM MODULE PRODUCTION IN THE US BY TECHNOLOGY
Link(PowerPoint 45 KB
AuthorK. Zweibel
DescriptionAnnual MWp/yr 2000-2011 by technology
Venue
SourceNational Renewable Energy Laboratory
Document TypePresentation (Powerpoint presentation)
Resource Date04/22/2004


Post Date02/11/2005
TitlePV MODULE RECYCLING IN THE US
Link(PDF 600 KBDownload Acrobat Reader.
AuthorsV. Fthenakis, K. Zweibel
DescriptionRecycling today and tomorrow
VenueEIA Workshop
SourceN/A
Document TypePresentation (Adobe Postscript file)
Resource Date03/2004


Post Date02/11/2005
TitlePV MODULE RECYCLING IN THE US
Link(PowerPoint 3.8 MB
AuthorsV. Fthenakis, K. Zweibel
DescriptionRecycling today and tomorrow.
VenueEU Workshop "Waste Challenge"
SourcesBrookhaven National Laboratory; National Renewable Energy Laboratory
Document TypePresentation (Powerpoint presentation)
Resource Date03/2004


Post Date02/07/2005
TitlePV AS A MAJOR SOURCE OF GLOBAL ELECTRICITY
Link(PowerPoint 13.2 MB
AuthorK. Zweibel
DescriptionProjected improvements needs to make PV a major source of electricity.
VenueUniversity of Toledo
SourceNational Renewable Energy Laboratory
Document TypePresentation (Powerpoint presentation)
Resource Date02/24/2004


Post Date02/17/2005
TitleA COMPARISON OF THIN FILMS AND X-SI IN THE US MARKET, HISTORICAL AND PROJECTED
Link(MS Word 31 KB
AuthorK. Zweibel
DescriptionThin films are gaining ground on x-Si and are projected to overtake it in the US about 2010-2011.
VenueThin Film Partnership and Paul Maycock's PV News February 2005
SourcePV News
Document TypePresentation (Word document)
Resource Date02/17/2004


Post Date02/11/2005
TitleTRAPPING ALMOST ALL CD IN GLASS ENCAPSULATION IN THE EVENT OF A RESIDENTIAL FIRE: DETAILED EXPERIMENTAL ANALYSIS
Link(PowerPoint 45.7 MB
AuthorV. Fthenakis
Description
Venue
SourceBrookhaven National Laboratory
Document TypePresentation (Powerpoint presentation)
Resource Date2004


Post Date02/15/2005
TitleTHE INTRINSIC STABILITY OF POLYCRYSTALLINE THIN FILM SOLAR CELLS
Link(PowerPoint 3.0 MB
AuthorsD. Albin, T. Berniard, S. Demetsu, T. J. McMahon, R. Noufi
DescriptionIndoor, accelerated tests of thin film CIS and CdTe
Venue
SourcesColorado State University; National Renewable Energy Laboratory
Document TypePresentation (Powerpoint presentation)
Resource Date2004


Post Date02/09/2005
TitleSUMMARY OF EXPERIMENTS WITH TE THICKNESS VARIATION
Link(PDF 67 KBDownload Acrobat Reader.
AuthorsK. D. Dobson, B. E. McCandless
Descriptionsummary of experiments we have performed to examine the effect of Te thickness on cell stability. At the end we comment on how these results are related to humidity effects during processing and stress.
Venue
SourceUniversity of Delaware
Document TypePresentation (Adobe Postscript file)
Resource Date09/05/2003


Post Date02/09/2005
TitleMAGNETRON SPUTTERING FOR LOW TEMPERATURE DEPOSITION OF CDTE PV
Link(PowerPoint 1.0 MB
AuthorA. Compaan
Description
VenueMRS Spring 2003
SourceUniversity of Toledo
Document TypePresentation (Powerpoint presentation)
Resource Date05/2003


Post Date02/09/2005
TitleTHE DYNAMICS OF CADMIUM TELLURIDE ETCHING
Link(PDF 192 KBDownload Acrobat Reader.
AuthorsK. D. Dobson, et al.
DescriptionCdTe etching was investigated using variable angle spectroscopic ellipsometry and glancing angle x-ray diffraction. Treatment with HNO3:H3PO4 (NP) based etches was shown to form amorphous-Te surface films which spontaneously crystallize following etching. Br2/methanol (BM) etching forms very thin amorphous-Te films. NP-etched surfaces are stable in ambient air...
VenueCdTe Team Meeting
SourceUniversity of Delaware
Document TypePresentation (Adobe Postscript file)
Resource Date2003


Post Date02/09/2005
TitleWHEN, WHY AND WHERE ARE CDTE/CDS SOLAR CELLS STABLE?
Link(MS Word 960 KB
AuthorsK. D. Dobson, I. Visoly-Fisher, et al.
DescriptionThe role of Cu in CdTe/CdS solar cell instability remains the subject of much debate. The investigation of a range of 'Cu'-contacted CdTe/CdS cells, which had received various thermal stress treatments, is described. Cells that were stressed in air exhibit strong current-voltage (I-V) rollover and junction degradation. No such degradation was observed for 'Cu'-contacted cells that had been stressed in dry-N2 atmosphere. Cu is found to diffuse rapidly through the cell structure during back contact annealing and to accumulate in the CdS layer. With stress, significant levels of Cu dope the grain bulk, producing (with Cl) high resistance, photo-conducting CdS. This behavior is independent of stress atmosphere and is, therefore, unlikely to (initially) be a dominating mechanism for cell degradation. Our results suggest simple air oxidation of the back contact interface to be a likely origin of I-V rollover in CdTe/CdS cells.
VenueCdTe Team Meeting
SourceWeizmann Institute
Document TypePresentation (Word document)
Resource Date2003


Post Date02/07/2005
TitlePROGRESS IN US PV
Link(PowerPoint 1.5 MB
AuthorT. Surek
Description50 years of progress in PV.
VenueOsaka IEEE conference
SourceNational Renewable Energy Laboratory
Document TypePresentation (Powerpoint presentation)
Resource Date2003

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Annual/Final Reports


Post Date07/09/2008
TitlePROCESSING MATERIALS, DEVICES AND DIAGNOSTICS FOR THIN FILM PHOTOVOLTAICS: FUNDAMENTAL AND MANUFACTURABILITY ISSUES
Link(PDF 4.2 MBDownload Acrobat Reader.
AuthorsR. W. Birkmire, W. N. Shafarman, E. Eser, S. S. Hegedus, B. E. McCandless, K. D. Dobson, S. Bowden
DescriptionThis report describes results achieved during phase V of a V-phase subcontract to develop and understand thin film solar cell technology associated to CuInSe2 and related alloys, a-Si and its alloys and CdTe. This includes application of a-Si to c-Si wafer-type cells as well. Modules based on all these thin films are promising candidates to meet DOE long-range efficiency, reliability and manufacturing cost goals. The critical issues being addressed under this program are intended to provide the science and engineering basis for the development of viable commercial processes and to improve module performance. The generic research issues addressed are: 1) quantitative analysis of processing steps to provide information for efficient commercial scale equipment design and operation; 2) device characterization relating the device performance to materials properties and process conditions; 3) development of alloy materials with different bandgaps to allow improved device structures for stability and compatibility with module design; 4) development of improved window/heterojunction layers and contacts to improve device performance and reliability; and 5) evaluation of cell stability with respect to illumination, temperature and ambient and with respect to device structure and module encapsulation.
VenueInstitute of Energy Conversion (U. Delaware), Subcontract No. ADJ-1-30630-12, annual report
SourceUniversity of Delaware
Document TypeAnnual Report (Adobe Postscript file)
Resource Date04/01/2008


Post Date01/14/2008
TitleFABRICATION AND PHYSICS OF CDTE DEVICES BY SPUTTERING
Link(PDF 3.8 MBDownload Acrobat Reader.
AuthorsA. Compaan, R. W. Collins, V. G. Karpov, D. Giolando
DescriptionOur effort on device physics has focused on studies of the optical and morphological properties of CdS and CdTe films using spectroscopic ellipsometry.  This has been carried out both in situ in real time during the sputter deposition processes and ex situ on films after sputter deposition is interrupted at different stages or after the CdCl2 processing is completed.  Other characterization has included EXAFS and high resolution TEM and EDS. Using transparent back contacts we have begun to explore carrier collection through the bifacial response of cells with CdTe layers between 0.7 and 2.3 ?m. We have sought better understanding of the factors controlling growth rates by studying the dependence on gas pressure as well as rf power paying close attention to film morphology and strain. We have explored alternative shunt passivation treatments and have modeled the fundamental physics of ultrathin solar cells.
VenueUniversity of Toledo, subcontract ZXL-5-44205-01, Annual Report
SourceUniversity of Toledo
Document TypeAnnual Report (Adobe Postscript file)
Resource Date10/2007


Post Date10/25/2007
TitleCHARACTERIZATION OF THE ELECTRONIC AND CHEMICAL STRUCTURE AT THIN FILM SOLAR CELL INTERFACES
Link(PDF 1.3 MBDownload Acrobat Reader.
AuthorsC. Heske, M. Baer
DescriptionThis project is devoted to deriving the electronic structure of interfaces in Cu(In,Ga)(S,Se)2 and CdTe thin film solar cells. By using a unique combination of spectroscopic methods (photoelectron spectroscopy, inverse photoemission, and X-ray absorption and emission) a comprehensive picture of the electronic (i.e., band alignment in the valence and conduction band) as well as chemical structure can be painted. The work focuses on (a) deriving the bench mark picture for world-record cells, (b) analyze state-of-the-art cells from industrial processes, and (c) aid in the troubleshooting of cells with substandard performance. In the last year, we could draw a complete picture of the chemical and electronic properties of the deeply buried chalcopyrite/back contact interface. For these experiments Cu(In,Ga)Se2 ("CIGSe") and Cu(In,Ga)(S,Se)2 ("CIGSSe")/back contact samples pre-pared by the group of W. Shafarman (Institute of Energy Conversion, University of Delaware) were used. We have found a pronounced chemical interaction between absorber and back contact, namely the formation of MoSe2 (and Mo(S,Se)2) and a "diffusion" of Ga into the Mo layer. In addition, we could derive a tentatively flat valence band alignment at this interface. In addition, we have investigated the CdS/CIGSe interface of samples provided by the National Renewable Energy Laboratory (M. Contreras, R. Noufi), which currently holds the world record for respective solar cell devices in terms of photovoltaic performance. Our results show that, in contrast to earlier measurements on samples from a different source, no pronounced S/Se intermixing at this interface can be observed.
VenueUniversity of Nevada, Las Vegas, subcontract XXL-5-44205-12, annual report
SourceUniversity of Nevada, Las Vegas
Document TypeAnnual Report (Adobe Postscript file)
Resource Date08/15/2007


Post Date06/22/2007
TitleCHARACTERIZATION AND ANALYSIS OF CIGS AND CDTE SOLAR CELLS
Link(PDF 1.3 MBDownload Acrobat Reader.
AuthorJ. R. Sites
Description

The fundamental work on CIGS cells included an analysis of the expected behavior for submicron thin absorbers. A baseline scenario based on experimental results was compared with conditions where the absorber lifetime and its carrier concentration were reduced by an order of magnitude. Additional calculations compared front-side with back-side illumination, again in the context of experimental results, and calculated several consequences of weak-diode areas and partial shunting, both expected to be of increasing importance for thinner CIGS. Finally, a collaboration with NREL compared the differences between 19.5%-efficient CdZnS/CIGS cells and those made with the conventional CdS buffer.

A major CdTe project in response to the excessive voltage deficit between CdTe and single-crystal cells has been the analysis of strategies to significantly enhance voltage. One strategy recommended for a major experimental effort is an n-i-p structure with an electron reflector before the back contact. Experimentally, CdTe lifetime and current-voltage curves were measured as a function of copper amount used in the back contact, and the expected impact of low lifetimes, including artificially large A-factors, was calculated. Also, experimentally, CdTe cells made with commercially compatible processing were utilized to determine how CdS thickness affects the cell performance parameters.

VenueColorado State University subcontract XXL-5-44205-03, Phase II Annual report
SourceColorado State University
Document TypeAnnual Report (Adobe Postscript file)
Resource Date04/30/2007


Post Date07/19/2006
TitleFABRICATION AND PHYSICS OF CDTE DEVICES BY SPUTTERING
Link(PDF 6.7 MBDownload Acrobat Reader.
AuthorsA. Compaan, V. G. Karpov, R. W. Collins, D. Giolando
DescriptionOur efforts on device physics have primarily involved modeling of CdS/CdTe based PV junctions, modeling and verification of device shunting instability, observation and studying the nature of spatial and temporal fluctuations of micro (AFM) currents through CdTe junctions, further studying of piezo-PV coupling, XAFS XES structural chemistry study of CdCl2 treated CdS films, spectral ellipsometry study of surface morphology in the course of structure growth, as well as etching, film structure and device parameters vs. magnetron deposition rate, and device parameters for CdTe thickness below 1 micron. During the first year of this award, we have:
(1) Developed numerical and analytical (field reversal) models explaining all the major facts pertaining to CdTe/CdS device operations,
(2) Developed a quantitative description of shunting instability in thin film PV through the mechanism of dielectric breakdown and verified it experimentally,
(3) Experimentally observed gigantic spatial and temporal fluctuations of micro AFM current and proposed their interpretation based on defect motility in CdTe films,
(4) Developed a new (bending) technique of piezo-PV characterization and observed increase in the open circuit voltage of devices on flexible substrates subject to certain bending; also, observed the piezo-PV coupling in CIGS based materials,
(5) Through XAFS and XES techniques, established the nature of Cu binding in CdS (primarily with S atoms), and effect of substantial compression of certain atomic bonds upon Cu diffusion in CdS,
 atomic bonds upon Cu diffusion in CdS,
(6) Established that increase in the magnetron deposition rate by the factor of 2.5 does not hamper the cell performance when the postdeposition treatment is properly optimized,
(7) Experimentally established the relationship between the CdTe film thickness and device efficiency in the range of 2.5 - 0.45 micron, in particular demonstrated high efficiency devices of thickness below 1 micron.
VenueSubcontract RXL-5-44205-01, University of Toledo, Annual report
SourceUniversity of Toledo
Document TypeAnnual Report (Adobe Postscript file)
Resource Date07/19/2006


Post Date09/07/2006
TitleCHARACTERIZATION OF THE ELECTRONIC AND CHEMICAL STRUCTURE AT THIN-FILM SOLAR CELL INTERFACES
Link(PDF 415 KBDownload Acrobat Reader.
AuthorsM. Baer, C. Heske
Description
This project is devoted to deriving the electronic structure of interfaces in Cu(In,Ga)(S,Se)2 and CdTe thin film solar cells.  By using a unique combination of spec-troscopic methods (photoelectron spectroscopy, inverse photoemission, and X-ray ab-sorption and emission) a comprehensive picture of the electronic (i.e., band alignment in the valence and conduction band) as well as chemical structure can be painted. The work focuses on (a) deriving the bench mark picture for world-record cells, (b) analyze state-of-the-art cells from industrial processes, and (c) aid in the troubleshooting of cells with substandard performance.
First funds for this project became available in the middle of July 2005. Since then, the workforce of the group was expanded to the size required for this project. The experimental instrumentation at UNLV ? a four-chamber ultra-high vacuum surface analysis and modification system ? was commissioned and put to routine use after its re-location from the University of Würzburg, Germany. In addition, a setup for inverse photoemission was integrated and a new electron analyzer was installed at UNLV to al-low state-of-the-art data acquisition and spectral quality.
Contacts within the Thin Film PV Partnership Program were established to secure a supply of adequate samples. These samples were analyzed both in the lab at UNLV as well as in our beamtimes at the Advanced Light Source, Lawrence Berkeley National Laboratory (Nov. 2 ? 13, 2005 and May 16 ? 23, 2006).
In our first beamtime within this project at the Advanced Light Source we could gather first results with Cu(In,Ga)Se2 samples prepared by NREL. Combined with addi-tional photoemission measurements at UNLV, a detailed picture of the chemical compo-sition at several interfaces and surface of the device structure could be drawn. Also dur-ing the first beamtime at the Advanced Light Source, we conducted first XES measure-ments of CdTe/CdS samples prepared by the group of A. Compaan (University of Toledo). Recently, these synchrotron results could be complemented by initial photo-emission measurements at UNLV of CdTe/CdS thin film stacks provided by X. Wu (NREL).
VenueUniversity of Nevada, Las Vegas, subcontract XXL-5-44205-12, annual report
SourceUniversity of Nevada, Las Vegas
Document TypeAnnual Report (Adobe Postscript file)
Resource Date07/15/2006


Post Date05/18/2006
TitleCHARACTERIZATION AND ANALYSIS OF CIGS AND CDTE SOLAR CELLS
Link(PDF 2.5 MBDownload Acrobat Reader.
AuthorJ. R. Sites
DescriptionA number of studies relating to the fundamental operation of CIGS and CdTe solar cells were performed during Phase I. In addition, we have worked closely with industrial and NREL partners to evaluate specific cells, expanded our LBIC (light-beam-induced-current) capabilities, and analyzed the effective efficiency to be expected from several commercial thin-film modules. The fundamental work on CIGS cells included a detailed analysis of grain-boundary effects using two-dimensional modeling. It showed that the relatively benign effects observed are best explained by a decrease in the valence band edge in the vicinity of the grain boundary. A second project, which followed earlier work relating spatial grading of CIGS to performance, showed the increasing importance of an electron reflector at the back of the CIGS absorber as it is made progressively thinner. A third project generalized earlier work on the window/absorber conduction band offset to show that there is a general rule governing when a "spike" leads to a distortion of the current-voltage curve. The CdTe studies included a reasonably convincing explanation of the 1.456-eV photoluminescence peak as a copper-oxygen donor complex about 150 meV below the conduction-band minimum. A second project demonstrated how different combinations of absorber lifetime and back-contact barrier lead to different common features seen with CdTe cells. A third project extended stability and uniformity studies to focus on performance differences among cells with graphite, Ag, and Ni back contacts. Finally, a study of current response following voltage steps showed that reversible transients were essentially always present, but their magnitude varied considerably with sample preparation.
VenueSubcontract ADJ-1-30630-06
SourceColorado State University
Document TypeAnnual Report (Adobe Postscript file)
Resource Date05/2006


Post Date06/02/2006
TitleDOE SOLAR ENERGY TECHNOLOGY PROGRAM FY2005 ANNUAL REPORT
Link(PDF 5.2 MBDownload Acrobat Reader.
AuthorN/A
DescriptionThe majority of the Program?s budget is allocated to PV research and development (R&D). All PV devices convert sunlight directly into electricity. However, there is a variety of materials and processes for creating PV devices, each with its own benefits and drawbacks. The major trade-off is between cost and sunlight-to-electricity conversion efficiency?higher efficiency typically translates into higher cost. Program participants consistently achieve world-record efficiencies for different types of PV, but each effort has the same ultimate goal: optimizing cost and efficiency to produce the least expensive end-use electricity.   
VenueDOE/GO-102006-2314May 2006    
SourceNational Renewable Energy Laboratory
Document TypeAnnual Report (Adobe Postscript file)
Resource Date05/2006


Post Date04/10/2006
TitleFULFILLING THE PROMISE OF THIN FILM PV
Link(PDF 5.5 MBDownload Acrobat Reader.
AuthorK. Zweibel
DescriptionThe Thin Film PV Partnership spearheads R&D on emerging thin film PV technologies. Led by the National Center for Photovoltaics and NREL, the Partnership leverages the combined efforts of the thin film PV industry, universities, and government research institutes.    
VenueBrochure excerpt
SourceNational Renewable Energy Laboratory
Document TypeAnnual Report (Adobe Postscript file)
Resource Date04/2006


Post Date02/07/2006
TitleDOE FY2007 CONGRESSIONAL BUDGET REQUEST FOR ENERGY SUPPLY AND CONSERVATION
Link(PDF 3.4 MBDownload Acrobat Reader.
AuthorN/A
DescriptionAppropriation Account Summary..........................................................................................................3 Appropriation Language ........................................................................................................................7 Energy Efficiency and Renewable Energy ..........................................................................................11 Electricity Delivery & Energy Reliability .........................................................................................511 Nuclear Energy .................................................................................................................................571 Environment, Safety and Health ........................................................................................................705 Legacy Management.........................................................................................................................733
VenueThe Department of Energy?s FY 2007 Congressional Budget justification is available on the Office of Chief Financial Officer/CFO homepage at http://www.mbe.doe.gov/budget
SourceDepartment of Energy
Document TypeAnnual Report (Adobe Postscript file)
Resource Date02/2006


Post Date02/01/2006
TitleTHIN FILM PV PARTNERSHIP
Link(MS Word 393 KB
AuthorK. Zweibel
DescriptionObjectives Support the near-term transition to first-time manufacturing and commercial introduction of reliable thin-film a-Si, CIS, CdTe, and film silicon modules. Build a technology base upon which these advanced PV technologies can successfully improve manufacturing and continue to progress in terms of performance, reliability, and reduced cost for products meant to compete in the PV marketplace. Sustain innovation to support progress toward ambitious long-term PV cost and performance goals (e.g., 15% modules at under $50/m2 and capable of lasting 30 years) appropriate for cost-competitive PV electricity. Accomplishments Four JOULE milestones were met. Two Technology Partners broke ground on major manufacturing expansions (First Solar 50 MWp, and Uni-Solar 25 MWp). Production of thin films in the United States grew from 12 MWp in 2003 to an estimated >40 MWp in 2005. Future Directions ·         Continue to address key issues supporting the transition to successful first-time manufacturing or major production expansion in each thin film. ·         Significantly reduce CIS and CdTe layer thicknesses in cells and support transfer of this to manufacturing. ·         Direct CdTe research toward higher voltage. ·         Investigate nano-crystalline bottom cells for thin-film silicon multijunctions.___________________________________________
VenueDOE NREL Annual Report
SourceNational Renewable Energy Laboratory
Document TypeAnnual Report (Word document)
Resource Date02/2006


Post Date01/25/2006
TitlePROCESSING MATERIALS, DEVICES AND DIAGNOSTICS FOR THIN FILM PHOTOVOLTAICS: FUNDAMENTAL AND MANUFACTURABILITY ISSUES
Link(MS Word 16.5 MB
AuthorR. W. Birkmire
DescriptionCdTe, CIS, CIGS, a-Si, thin Si
VenueAnnual Report to National Renewable Energy Laboratory under Subcontract No. ADJ-1-30630-129/05/04 to 9/04/05
SourceUniversity of Delaware
Document TypeAnnual Report (Word document)
Resource Date01/2006


Post Date02/01/2006
TitleMANUFACTURING PROCESS OPTIMIZATION TO IMPROVE STABILITY, YIELD AND EFFICIENCY OF CDS/CDTE PV DEVICES
Link(MS Word 238 KB
AuthorW. S. Sampath
DescriptionUnder Phase I of the Thin Film Partnership Program, we have made significant progress.  During this year, the reproducibility of device efficiency and stability has been demonstrated during long duration operation of the system with a single charge loading for the CdS, CdTe and CdCl2 process. Currently efforts are underway to advance the back contact processing to the same level as outlined in the SOW. In order to accomplish this, a significant upgrade to increase the processing space in our pilot scale system has been designed, fabricated and is currently being installed.  A series of detailed studies on the effect of oxygen during the CdCl2 treatment has been performed.  Oxygen has been shown to improve the effectiveness of the CdCl2 treatment. Mathematical modeling of a package design has yielded results that show that moisture can be kept from our device for 22 years at 65C temperature with saturated humidity. Hardware to perform steady state photocapacitance (PHCAP) has been designed, built and tested in our laboratory. The effect of processing on the deep states in CdTe devices can be seen quantitatively. Optimum process conditions lead to lower photocapacitance signals.  The feasibility of cooling the substrate in vacuum for optimum processing of the back contact has been demonstrated. A large number of experiments have been performed on laser scribing of CdS/CdTe films. Mechanical scribing has yielded the lowest contact resistance between the scribed region and the metallization, to date. Researchers at National Starch and Chemicals (NSC) have performed many experiments to screen print carbon, nickel and silver films in patterns. The adhesion of these films was tested according to ASTM 3359B and achieved a 5B or "excellent" rating. 
VenueSeptember 2005 - January 2006 Thin Film Partnership Program Subcontract XXL-5-44205-02
SourceColorado State University
Document TypeAnnual Report (Word document)
Resource Date01/2006


Post Date12/27/2005
TitleDEEP ELECTRONIC STATES IN CDTE SOLAR CELLS DETECTED WITH ADMITTANCE TECHNIQUES
Link(MS Word 81 KB
AuthorF. H. Seymour
DescriptionDeep electronic states (DES) in the absorber layer of thin film polycrystalline CdTe solar cells are believed to be limiting their energy conversion efficiency.  Admittance spectroscopy and capacitance transient techniques were applied with a custom-built temperature stage to detect and characterize these DES.  CdTe solar cells obtained from two sources that had post-deposition back contact treatments with and without Cu and CdCl2 were studied.    DES were detected with activation energies ranging from 0.13 eV to 0.83 eV.  One hole trap signature with Ea~0.15 eV was detected in all four cell categories in different concentrations and was attributed to a combination of  and the chlorine A-center complex defects.  A second hole trap signature with       Ea~0.35 eV and detected only in Cu treated cells was attributed to the copper substitutional  defect.  Analysis of current density voltage temperature data indicates that the defect might be responsible for the improved JSC  observed in the CdCl2 treated cells.
VenueDOE Solar Review 2005
SourceColorado School of Mines, Golden, CO
Document TypeAnnual Report (Word document)
Resource Date12/2005


Post Date12/27/2005
TitleTHIN CDTE SOLAR CELLS WITH HIGH THROUGHPUT PROCESSING
Link(MS Word 68 KB
AuthorB. E. McCandless
DescriptionProgress towards reducing CdTe film thickness and increasing performance and processing throughput for vapor transport (VT) deposited CdTe/CdS solar cells is highlighted. VT devices with 5-7 mm thick CdTe deposited on moving substrates at 9 mm/min using a 20 min vapor CdCl2 treatment at 415ºC achieved Voc up to 840 mV and h > 13%. Devices with h = 11% were obtained with 2 min CdCl2 treatments at 465ºC.  For cells with CdTe thickness ~1.5 mm, h >10% was obtained. Voc and FF decreased for cells with CdTe deposited at >80 mm/min and for cells with mm CdTe. Devices using transparent ZnTe contacts have similar performance to those with opaque contacts and are being used to separate back contact and primary junction effects.
Venue2005 DOE Solar Review
SourceUniversity of Delaware
Document TypeAnnual Report (Word document)
Resource Date12/2005


Post Date11/11/2005
TitlePOLYCRYSTALLINE THIN FILM DEVICE DEGRADATION STUDIES
Link(PDF 85 KBDownload Acrobat Reader.
AuthorD. Albin
DescriptionOxygen during vapor CdCl2 (VCC) treatments significantly reduced resistive shunts observed in CdS/CdTe polycrystalline devices using thinner CdS layers during 100 °C, open-circuit, 1-sun accelerated stress testing. Cu oxidation resulting from the reduction of various trace oxides present in as-grown and VCC treated films is the proposed mechanism by which Cu diffusion, and subsequent shunts are controlled. Graphite paste layers between metallization and CdTe behave like diffusion barriers and similarly benefit device stability. Ni-based contacts form a protective Ni2Te3 intermetallic layer that reduces metal diffusion but degrades performance through increased series resistance.
VenueDOE Solar Review Meeting 2005 paper
SourceNational Renewable Energy Laboratory
Document TypeAnnual Report (Adobe Postscript file)
Resource Date11/10/2005


Post Date11/17/2005
TitleUNDERSTANDING THE PHYSICS OF CDS-BASED PV: BAND DIAGRAM, INTERFACES, AND NONUNIFORMITIES
Link(MS Word 120 KB
AuthorV. G. Karpov
DescriptionOur recent discovery of piezo-PV coupling together with other indicative evidence suggest an adequate band diagram for CdS based thin-film PV. The proposed model is solved analytically leading to numerous predictions that include lack of the carrier collection from CdS, buffer layer effects, and others. This understanding points at new pathways for device improvement.
VenueDOE Solar Review 2005
SourceUniversity of Toledo
Document TypeAnnual Report (Word document)
Resource Date11/2005


Post Date11/11/2005
TitleDEEP ELECTRONIC STATES IN CDTE SOLAR CELLS DETECTED WITH ADMITTANCE TECHNIQUES
Link(MS Word 74 KB
AuthorF. H. Seymour
DescriptionDeep electronic states (DES) in the absorber layer of thin film polycrystalline CdTe solar cells are believed to be limiting their energy conversion efficiency.  Admittance spectroscopy and capacitance transient techniques were applied with a custom-built temperature stage to detect and characterize these DES.  CdTe solar cells obtained from two sources that had post-deposition back contact treatments with and without Cu and CdCl2 were studied.    DES were detected with activation energies ranging from 0.13 eV to 0.83 eV.  One hole trap signature with Ea~0.15 eV was detected in all four cell categories in different concentrations and was attributed to a combination of  and the chlorine A-center complex defects.  A second hole trap signature with       Ea~0.35 eV and detected only in Cu treated cells was attributed to the copper substitutional  defect.  Analysis of current density voltage temperature data indicates that the defect might be responsible for the improved JSC  observed in the CdCl2 treated cells.
VenueDOE Solar Review 2005
SourceColorado School of Mines, Golden, CO
Document TypeAnnual Report (Word document)
Resource Date11/2005


Post Date04/05/2005
TitleADVANCED PROCESSING OF CDTE- AND
CUIN1-XGAXSE2- BASED SOLAR CELLS
Link(PDF 584 KBDownload Acrobat Reader.
AuthorsC. S. Ferekides, D. Morel
DescriptionCdTe CSS and CIGS sputtering
VenueNDJ-2-30630-18 PHASE II
SourceUniversity of South Florida, Tampa
Document TypeAnnual Report (Adobe Postscript file)
Resource Date03/2005


Post Date02/17/2005
TitlePROCESSING MATERIALS, DEVICES AND DIAGNOSTICS FOR THIN FILM PHOTOVOLTAICS
Link(MS Word 7.7 MB
AuthorsR. W. Birkmire, S. S. Hegedus, B. E. McCandless, W. N. Shafarman, et al.
Description
VenueADJ-1-30630-12 9/05/03 to 9/04/04
SourceUniversity of Delaware
Document TypeAnnual Report (Word document)
Resource Date10/2004


Post Date01/18/2004
TitleSTABILITY, YIELD AND EFFICIENCY OF CDS/CDTE DEVICES
Link(MS Word 31 KB
AuthorW. S. Sampath
Description

One-page summary of 2004 accomplishments

Venue2004 Summary Annual Report for NREL Program; Subcontract No. ADJ-1-30630-07 to Colorado State University
SourceColorado State University
Document TypeAnnual Report (Word document)
Resource Date10/2004


Post Date02/09/2005
TitleRESEARCH LEADING TO HIGH THROUGHPUT MANUFACTURING OF THIN-FILM CDTE PV MODULES
Link(MS Word 7.8 MB
AuthorR. C. Powell
DescriptionFirst Solar is actively commercializing CdTe-based thin film photovoltaics. During the past year major additions of production capability have been completed as well as process improvements to achieve higher throughput and efficiency and greater durability. This report presents the results of phase II of the subcontract entitled "Research Leading to High Throughput Manufacturing of Thin-Film CdTe PV Modules". The subcontract supports several important aspects needed to for high volume manufacturing of high efficiency modules including exploration of large area advanced front contact window layers, improvements of the semiconductor deposition system, advancement in understanding of post deposition processing steps and accelerated life testing methods, and progress to the environmental, health and safety programs.
VenueAnnual subcontract report
mailto:Doug Rose
SourceFirst Solar, Toledo, OH
Document TypeAnnual Report (Word document)
Resource Date09/27/2004


Post Date02/08/2005
TitleSTUDIES OF BASIC ELECTRONIC PROPERTIES OF CDTE-BASED SOLAR CELLS & THEIR EVOLUTION DURING PROCESSING & STRESS
Link(PDF 3.0 MBDownload Acrobat Reader.
AuthorsV. Kaydanov, T. Ohno
DescriptionWe emphasize the relation between composition, structural and electronic material properties and various processing procedures as well as the microscopic mechanisms responsible for the cell performance and its degradation.
VenueADJ-2-30630-05
SourceColorado School of Mines, Golden, CO
Document TypeAnnual Report (Adobe Postscript file)
Resource Date11/2003


Post Date01/21/2005
TitleDEVICE PHYSICS OF THIN-FILM POLYCRYSTALLINE CELLS AND MODULES
Link(MS Word 26 KB
AuthorJ. R. Sites
DescriptionWork was performed at Colorado State University on basic measurements of CIGS and CdTe solar cells fabricated at a number of collaborating laboratories. The goal is to quantitatively deduce the loss mechanisms in a number of these cells, and to make appropriate comparisons that illuminate where progress is being made.
VenueSummary Report for 2003, Subcontract ADJ-1-30630-06
SourceColorado State University
Document TypeAnnual Report (Word document)
Resource Date10/2003


Post Date02/02/2005
Title2003 DOE PV PEER REVIEW
Link(PDF 716 KBDownload Acrobat Reader.
AuthorN/A
DescriptionReview of DOE PV activities in 2003
VenueUS DOE EERE
SourceUS DOE
Document TypeAnnual Report (Adobe Postscript file)
Resource Date09/30/2003


Post Date02/09/2005
TitleRESEARCH LEADING TO HIGH THROUGHPUT MANUFACTURING OF THIN-FILM CDTE PV MODULES PHASE I
Link(MS Word 5.7 MB
AuthorR. C. Powell
DescriptionThe subcontract supports several important aspects needed to begin high volume manufacturing including further development of the semiconductor deposition reactor, advancement of accelerated life testing methods and understanding, and improvements to the environmental, health and safety programs.
VenueNREL report RDJ-2-30630-20
SourceFirst Solar, Toledo, OH
Document TypeAnnual Report (Word document)
Resource Date09/27/2003


Post Date02/09/2005
TitlePROCESSING MATERIALS, DEVICES AND DIAGNOSTICS FOR THIN FILM PHOTOVOLTAICS: FUNDAMENTAL AND MANUFACTURABILITY ISSUES
Link(MS Word 4.6 MB
AuthorsR. W. Birkmire, S. S. Hegedus, B. E. McCandless, W. N. Shafarman, et al.
Description
VenueAnnual report ADJ-1-30630-12
SourceUniversity of Delaware
Document TypeAnnual Report (Word document)
Resource Date09/04/2003


Post Date03/03/2005
TitleDEVICE PHYSICS OF THIN-FILM POLYCRYSTALLINE CELLS AND MODULES
Link(MS Word 2.9 MB
AuthorJ. R. Sites
Description
VenueADJ-1-30630-06
SourceColorado State University
Document TypeAnnual Report (Word document)
Resource Date09/2003


Post Date03/04/2005
TitlePROCESSING MATERIALS, DEVICES AND DIAGNOSTICS FOR THIN FILM PHOTOVOLTAICS: FUNDAMENTAL AND MANUFACTURABILITY ISSUES
Link(MS Word 4.5 MB
AuthorR. W. Birkmire
Description
VenueADJ-1-30630-12 9/05/02 to 9/04/03
SourceUniversity of Delaware
Document TypeAnnual Report (Word document)
Resource Date09/2003


Post Date02/10/2005
TitleTHE FABRICATION AND PHYSICS OF HIGH-E±CIENCY CDTE THIN-FILM SOLAR CELLS
Link(PDF 3.9 MBDownload Acrobat Reader.
AuthorA. Compaan
DescriptionOur efforts on cell fabrication have primarily involved the use of magnetron sputtering for deposition. In addition, we have developed and used novel electrochemical treatments at the stage of finishing the devices deposited by other techniques: vapor transfer deposition (VTD) and close space sublimation (CSS), both made at First Solar, LLC.
VenueNDJ-1-30630-02 September 1, 2002 to August 31, 2003
SourceUniversity of Toledo
Document TypeAnnual Report (Adobe Postscript file)
Resource Date09/2003


Post Date03/03/2005
TitlePROCESSING, MATERIALS, DEVICES AND DIAGNOSTICS FOR THIN-FILM PHOTOVOLTAICS: FUNDAMENTAL AND MANUFACTURABILITY ISSUES
Link(MS Word 37 KB
AuthorR. W. Birkmire
Description
VenuePV Program Contract Summary Report Thin-film PV Partnership Program
SourceUniversity of Delaware
Document TypeAnnual Report (Word document)
Resource Date09/2003


Post Date02/10/2005
TitleDEVICE PHYSICS OF THIN-FILM POLYCRYSTALLINE CELLS AND MODULES
Link(MS Word 2.9 MB
AuthorJ. R. Sites
DescriptionThe goal has been to quantitatively deduce the loss mechanisms in a number of these cells, and to make appropriate comparisons that illuminate where progress is being made.
VenuePhase II September 2002 - August 2003 ADJ-1-30630-06
SourceColorado State University
Document TypeAnnual Report (Word document)
Resource Date09/2003


Post Date02/08/2005
TitleADVANCED PROCESSING OF CDTE- AND CUIN1-XGAXSE2
Link(PDF 1.9 MBDownload Acrobat Reader.
AuthorsC. S. Ferekides, D. Morel
DescriptionThis project addresses two thin film technologies CdTe and CIGS. The CdTe component of the project has three task areas. These are:
  • development of simplified processing for the fabrication of CdTe solar cells
  • correlation of the long term stability with process/device characteristics.
  • VenuePhase I Final Report to NREL NDJ-2-30630-18
    SourceUniversity of South Florida, Tampa
    Document TypeAnnual Report (Adobe Postscript file)
    Resource Date2003


    Post Date02/15/2005
    TitleDEVICE PHYSICS OF THIN-FILM POLYCRYSTALLINE CELLS AND MODULES
    Link(MS Word 1.2 MB
    AuthorJ. R. Sites
    DescriptionWork has been performed at Colorado State University on basic measurements of CdTe and CI(G)S solar cells fabricated at a number of collaborating laboratories. The goal has been to quantitatively deduce the loss mechanisms in a number of these cells, and to make appropriate comparisons that illuminate where progress is being made. Special emphasis was given to the differences in CdTe cells, both as-deposited and after elevated-temperature stress, that result from variations in the amount of back-contact copper. The second area of study has been further development of small-spot measurement of micro-nonuniforities, including those that develop during temperature stress. The facility focuses a laser beam onto a solar cell with 1-mm beam size, 1-mm resolution and repeatability, and one-sun intensity. The third task has been the determination of defect-state densities in CIGS cells by low-temperature capacitance measurements. Emphasis has been given to the comparisons between CIGS absorbers fabricated by different techniques and among different strategies for the buffer between absorber and transparent contact. The final task area has been numerical simulations of CdTe and CI(G)S cells. Replication of experimental data has been successful in both cases. The CdTe CIGS studies have illuminated the effects of thickness variations in the CdS and CdTe layers, while more recent CIGS studies have shown the impact of the CdS/CIGS conduction band offset on light/dark superposition.
    VenueSubcontract ADJ-1-30630-06 Phase I September 2001 - August 2002
    SourceColorado State University
    Document TypeAnnual Report (Word document)
    Resource Date09/2002


    Post Date02/08/2005
    TitleDEVICE PHYSICS OF THIN-FILM POLYCRYSTALLINE CELLS AND MODULES
    Link(MS Word 1.2 MB
    AuthorJ. R. Sites
    DescriptionWork has been performed at Colorado State University on basic measurements of CdTe and CI(G)S solar cells fabricated at a number of collaborating laboratories. The goal has been to quantitatively deduce the loss mechanisms in a number of these cells, and to make appropriate comparisons that illuminate where progress is being made. Special emphasis was given to the differences in CdTe cells, both as-deposited and after elevated-temperature stress, that result from variations in the amount of back-contact copper.
    VenueNREL Phase I September 2001 - August 2002 Subcontract ADJ-1-30630-06
    SourceColorado State University
    Document TypeAnnual Report (Word document)
    Resource Date09/2002


    Post Date02/10/2005
    TitleTHE FABRICATION AND PHYSICS OF HIGH-EFFICIENCY CDTE THIN-FILM SOLAR CELLS
    Link(PDF 3.1 MBDownload Acrobat Reader.
    AuthorA. Compaan
    Description
    VenueNDJ-1-30630-02 September 1, 2001 to August 31, 2002
    SourceUniversity of Toledo
    Document TypeAnnual Report (Adobe Postscript file)
    Resource Date09/2002


    Post Date03/03/2005
    TitleADVANCED PROCESSING OF CDTE- AND CUIN1-XGAXSE2- BASED SOLAR CELLS
    Link(PDF 1.9 MBDownload Acrobat Reader.
    AuthorsC. S. Ferekides, D. Morel
    Description
    VenueNDJ-2-30630-18
    SourceUniversity of South Florida, Tampa
    Document TypeAnnual Report (Adobe Postscript file)
    Resource Date2002


    Post Date05/11/2009
    TitleFABRICATION AND PHYSICS OF CDTE DEVICES BY SPUTTERING
    Link(PDF 3.6 MBDownload Acrobat Reader.
    AuthorsA. Compaan, R. W. Collins, V. G. Karpov, D. Giolando
    DescriptionThe three overall emphases of this subcontract were the following: 1) improving our understanding of key aspects of CdS/CdTe solar cell device physics, 2) improving our understanding of magnetron sputtering and increasing the sputter deposition rate while maintaining high device quality, and 3) reducing the thickness of CdTe layers in the CdS/CdTe cell below 0.5 ?m while maintaining voltage and fill factor.
    VenueUniversity of Toledo, subcontract ZXL-5-44205-01, Final Report
    SourceUniversity of Toledo
    Document TypeFinal Report (Adobe Postscript file)
    Resource Date04/2009


    Post Date04/27/2009
    TitlePROCESSING MATERIALS DEVICES AND DIAGNOSTICS FOR THIN FILM PHOTOVOLTAICS: FUNDAMENTAL AND MANUFACTURABILITY ISSUES
    Link(PDF 1.6 MBDownload Acrobat Reader.
    AuthorsR. W. Birkmire, W. N. Shafarman, E. Eser, S. S. Hegedus, B. E. McCandless, K. D. Dobson, S. Bowden
    DescriptionThis report describes results achieved under this subcontract to develop and understand thin-film solar cell technology associated to CuInSe2 and related alloys, a-Si and its alloys, and CdTe. This includes application of a-Si to c-Si wafer-type cells, as well. Modules based on all these thin films are promising candidates to meet DOE long-range efficiency, reliability, and manufacturing cost goals. The critical issues being addressed under this program are intended to provide the science and engineering basis for developing viable commercial processes and to improve module performance. The generic research issues addressed are: 1) quantitative analysis of processing steps to provide information for efficient commercial-scale equipment design and operation; 2) device characterization relating the device performance to materials properties and process conditions; 3) development of alloy materials with different bandgaps to allow improved device structures for stability and compatibility with module design; 4) development of improved window/heterojunction layers and contacts to improve device performance and reliability; and 5) evaluation of cell stability with respect to illumination, temperature, and ambient and with respect to device structure and module encapsulation.
    Venue

    Institute of Energy Conversion (IEC), University of Delaware, subcontract ADJ-1-30630-12, Final Report

    SourceUniversity of Delaware
    Document TypeFinal Report (Adobe Postscript file)
    Resource Date04/2009


    Post Date05/11/2009
    TitleCHARACTERIZATION AND ANALYSIS OF CIGS AND CDTE SOLAR CELLS
    Link(PDF 2.5 MBDownload Acrobat Reader.
    AuthorJ. R. Sites
    DescriptionThe project goals have been to (1) reliably and quantitatively separate individual performance loss mechanisms, (2) expand the tools available for such measurement and analysis, (3) refine the physical explanations for performance losses, and (4) suggest fabrication approaches or modifications that can reduce these losses. A number of studies relating to the fundamental operation of CIGS and CdTe solar cells were performed during the subcontract period. In addition, we have expanded our light-beam-induced-current (LBIC) capabilities and the formalism needed to evaluate spatial nonuniformities, and we have analyzed the effective efficiency to be expected from commercial thin-film modules
    VenueColorado State University, subcontract XXL-5-44205-03, Final Report
    SourceColorado State University
    Document TypeFinal Report (Adobe Postscript file)
    Resource Date01/2009


    Post Date05/30/2006
    TitleADVANCED PROCESSING OF CDTE- AND
    CUIN1-XGAXSE2 CELLS
    Link(PDF 1.0 MBDownload Acrobat Reader.
    AuthorsC. S. Ferekides, D. Morel
    DescriptionThis is the final report for the 3-year project with subcontract # NDJ-2-30630-18. The CdTe section of the report is organized in 2 major sections: (a) a summary of the activities and major results obtained during the first two 2 years (covered in Annual Reports I & II), and (b) activities for year 3. Additional details will be provided within the subsequent sections.
    VenueNDJ-2-30630-18
    SourceUniversity of South Florida, Tampa
    Document TypeFinal Report (Adobe Postscript file)
    Resource Date05/2006


    Post Date05/11/2005
    TitleDEVICE PHYSICS OF THIN-FILMPOLYCRYSTALLINE CELLS AND MODULES SUMMARY REPORT FOR 2004, SUBCONTRACT ADJ-1-30630-06
    Link(MS Word 27 KB
    AuthorJ. R. Sites
    Description  Task 1: Whole-cell analysis.  The J-V distortions in CIGS cells due to an excessive spike in the conduction-band offset have been broadly documented and explained.  The effects of a copper deficiency in the CdTe back contact have been similarly documented and explained.  The process for systematic quantification of individual loss mechanisms in both types of cells has been refined and made more routine. Task 2: Highly focused light spot.  Light-beam-induced-current (LBIC) measurements have shown that changes is CdTe cell response essentially always occur in localized regions.  Additional refinements in cell-mounting, measurement, and display techniques have also made LBIC measurements more routine. Task 3: Defect-states.  Low-temperature capacitance measurements with CIGS cells were used to compare absorbers fabricated by evaporation and by selenization, and to compare CdS and Cd-partial-electolyte buffer layers.  CdTe photoluminescence was used to identify a key defect state as a copper/oxygen donor complex approximately 150 meV below the conduction band. Task 4. Numerical simulation.  One project documented the limitation to cell voltage due to the CdS/CIGS conduction-band offset.  A second showed that grading profiles in standard-thickness CIGS absorbers lead at best to only a modest increase in cell efficiency.  A third project showed that a broad range of features seen in CdTe quantum-efficiency measurements can be explained with a simple three-layer model.
    Venue  ADJ-1-30630-06
    SourceColorado State University
    Document TypeFinal Report (Word document)
    Resource Date05/2005


    Post Date05/11/2005
    TitleDEVICE PHYSICS OF THIN-FILM POLYCRYSTALLINE CELLS AND MODULES
    Link(PDF 3.0 MBDownload Acrobat Reader.
    AuthorJ. R. Sites
    DescriptionThe first area of study has been whole-cell analysis. Individual projects have included development of more effective separation of losses, the role of copper incorporation and migration with CdTe cells, the current-voltage consequences of the conduction-band offset in CdS/CIGS cells, alternative buffers for CIGS cells, and the development of the CurVA software for analysis of current-voltage curves. The second area of study has been the use of a highly focused light spot (LBIC) to investigate spatial variations in polycrystalline solar cells. The local effects of elevated- temperature stress on CdTe cells has received the most attention, but we have also demonstrated that LBIC can be combined with other non-uniformity studies on the same cell and that it is possible to partially construct the J-V curve at individual local positions. The third task has been the study of defect-states. With CIGS cells, we used lowtemperature capacitance measurements to compare absorbers fabricated by evaporation with those made by selenization and to compare CdS buffer layers with the Cd-partialelectrolyte. For CdTe, photoluminescence from single crystals with controlled introduction of copper and oxygen has been compared with that from solar-cell material. The final task area has been numerical simulation. We have defined and advocated a set of baseline parameters for CIGS and CdTe cells. Specific projects have included explanations of apparent quantum- and collection-efficiency effects, the impact of conduction-band offset on current-voltage curves, the effects of absorber grading in CIGS cells, and the 2-D analysis of grain-boundary effects.
    VenueADJ-1-30630-06 September 2001 - October 2004
    SourceColorado State University
    Document TypeFinal Report (Adobe Postscript file)
    Resource Date05/2005


    Post Date01/03/2006
    TitleENERGY PAY-BACK AND LIFE CYCLE CO2 EMISSIONS OF THE BOS IN AN OPTIMIZED 3.5 MW PV INSTALLATION
    Linktepbos2005 
    AuthorJ. Mason
    DescriptionThis study is a life-cycle analysis of the balance of system (BOS) components of the 3.5 MWp multi-crystalline PV installation at Tucson Electric Power's (TEP) Springerville, AZ field PV plant. TEP instituted an innovative PV installation program guided by design optimization and cost minimization. The advanced design of the PV structure incorporated the weight of the PV modules as support, thereby eliminating the need for concrete foundations. The estimate of the life-cycle energy requirements embodied in the BOS is 543 MJ/m2, a 71% reduction from those of an older central plant; the corresponding life-cycle greenhouse gas emissions are 29 kg CO2-eq. /m2. From field measurements, the energy payback time (EPT) of the BOS is 0.21 years for the actual location of this plant, and 0.37 years for average US insolation/temperature conditions. This is a great improvement from the EPT of 2 years estimated for an older central plant. The total cost of the balance of system components was $940 US per kWp of installed PV, another milestone in improvement. These results were verified with data from different databases and further tested with sensitivity- and data-uncertainty analyses. Key Words: PV plant; balance of system; life cycle assessment, energy payback, GHG emissions
    Venuewebsite
    SourceTucson Electric
    Document TypeFinal Report (Hypertext link)
    Resource Date2005


    Post Date04/21/2005
    TitlePVACCEPT
    LinkPVACCEPT 
    AuthorN/A
    DescriptionPVACCEPT is a German-Italian research project, which was funded by the European Commission within the programme "Innovation and Small and Medium Sized Enterprises". The project aimed at designing and developing marketable solar modules for electricity generation, which are designed in a way to enable their sensitive and inconspicuous integration into old buildings, historical sites, and protected landscapes. The project has officially started on 1st July 2001, and is concluded since 31st December 2004.
    Venue
    SourcesUniversity of Arts, Berlin; University of Siena
    Document TypeFinal Report (Hypertext link)
    Resource Date12/2004


    Post Date02/08/2005
    TitleSTABILITY, YIELD AND EFFICIENCY OF CDS/CDTE DEVICES
    Link(PDF 632 KBDownload Acrobat Reader.
    AuthorsK. L. Barth, R. A. Enzenroth, W. S. Sampath
    DescriptionMajor results have been shown in the areas of device characterization, experimental infrastructure improvements and processing larger area substrates.
    VenueNREL ADJ-1-30630-07
    SourceColorado State University
    Document TypeFinal Report (Adobe Postscript file)
    Resource Date10/2004


    Post Date02/04/2005
    TitleSTUDY OF POTENTIAL COST REDUCTIONS RESULTING FROM SUPER-LARGE-SCALE MANUFACTURING OF PV MODULES
    Link(PDF 768 KBDownload Acrobat Reader.
    AuthorsR. Arya, M. Keshner, K. Zweibel
    DescriptionTechnology investments by the U.S. government Dept. of Energy, National Renewable Energy Lab (NREL) and others over the past 30 years have positioned the Solar Energy industry to undergo an inflection. The technology is now very close to good enough. The key issue is cost.
    VenueNREL final report NREL/SR-520-36846 Subcontract No. ADJ-3-33631-01
    SourcesHewlett Packard; National Renewable Energy Laboratory
    Document TypeFinal Report (Adobe Postscript file)
    Resource Date10/2004


    Post Date02/08/2005
    TitleDEVICE PHYSICS OF THIN-FILM POLYCRYSTALLINE CELLS AND MODULES
    Link(PDF 3.0 MBDownload Acrobat Reader.
    AuthorJ. R. Sites
    DescriptionWork has been performed at Colorado State University on basic measurements of CIGS and CdTe solar cells fabricated at a number of collaborating laboratories. The goal has been to explain several features seen in these measurements and quantitatively assess their impact on device performance.
    VenueSubcontract ADJ-1-30630-06 Final Report to NREL
    SourcesColorado State University; National Renewable Energy Laboratory
    Document TypeFinal Report (Adobe Postscript file)
    Resource Date10/2004


    Post Date03/11/2005
    TitleLEARNING FROM THE SUN
    Link(PDF 3.3 MBDownload Acrobat Reader.
    AuthorsE. A. Alsema, G. J. Schaeffer, et al.
    DescriptionAnalysis of the use of experience curves for energy policy purposes: The case of photovoltaic power. Final report of the Photex project  
    VenueECN-C--04-035  
    SourcePhotex
    Document TypeFinal Report (Adobe Postscript file)
    Resource Date08/2004


    Post Date02/11/2005
    TitleWORKSHOP ON LIFE CYCLE ANALYSIS AND RECYCLING OF SOLAR MODULES - THE "WASTE" CHALLENGE
    Link(PDF 12.5 MBDownload Acrobat Reader.
    AuthorA. Jager-Waldau
    DescriptionFirst, to rise the awareness of the Photovoltaic Community about the European Directives 2002/96/EC on waste electrical and electronic equipment (WEEE) and 2002/95/EC on the restriction of the use of certain hazardous substances in electrical and electronic equipment (ROHS), which have to be implemented by the Member States in 2004. These directives will have a significant impact on the PV industry, not only because the future waste classification of PV modules is an important issue, but also the sustainability and the green image of the PV industry as a whole has to be considered. The second focus was on Life Cycle Assessment the correct evaluation of External Costs and the Recycling of Solar Modules, which will help to avoid these problems. The workshop gave an overview about the current scientific and political discussion, identified problems and showed the way for possible solutions.
    VenueEuropean Commission EUR 21101 EN
    SourceEuropean Commission Joint Research Centre
    Document TypeFinal Report (Adobe Postscript file)
    Resource Date03/19/2004


    Post Date02/10/2005
    TitleTHE FABRICATION AND PHYSICS OF HIGH-E±CIENCY CDTE THIN-FILM SOLAR CELLS
    Link(PDF 2.2 MBDownload Acrobat Reader.
    AuthorsA. Compaan, et al.
    DescriptionCell structure and fabrication, cell modelling, and characterization of materials and devices.
    VenueNDJ-1-30630-02 September 1, 2001 to August 31, 2004
    SourceUniversity of Toledo
    Document TypeFinal Report (Adobe Postscript file)
    Resource Date01/2004


    Post Date02/07/2005
    TitlePV STATUS REPORT 2003
    Link(PDF 671 KBDownload Acrobat Reader.
    AuthorA. Jager-Waldau
    DescriptionResearch, Solar Cell Production and Market Implementation in Japan, USA and the European Union.
    VenueEuropean Commission JRC EUR 20850EN
    SourceInstitute for Environment and Sustainability
    Document TypeFinal Report (Adobe Postscript file)
    Resource Date09/2003


    Post Date02/07/2005
    TitleNUMERICAL MODELING AS A TOOL FOR ANALYZING THIN-FILM SOLAR CELLS AND INTERPRETING DEVICE AND MATERIAL CHARACTERIZATION MEASUREMENTS
    Link(PDF 116 KBDownload Acrobat Reader.
    AuthorJ. L. Gray
    DescriptionDetailed numerical modeling has proved to be a useful tool in developing many of the current PV technologies such as single crystal Si, GaAs, ? -Si, CdTe, and CIS, to name a few. The purpose of this work is to continue development of ADEPT (A Device Emulation Program and Tool) ? primarily to integrate it with MatLab™.
    VenueNREL Report, contract XAK-8-17619-36
    SourcePurdue
    Document TypeFinal Report (Adobe Postscript file)
    Resource Date2003


    Post Date11/11/2005
    TitleTELLURIUM AVALAIBILITY FOR LARGE SCALE PV
    Link(MS Word 140 KB
    AuthorJ. Guilinger
    DescriptionAnalysis of sources of tellurium for multi-GWp PV production
    VenueReport to NREL
    SourceWorld Industrial Minerals
    Document TypeFinal Report (Word document)
    Resource Date2000


    Post Date02/11/2005
    TitleENVIRONMENTAL ASPECTS OF PV POWER SYSTEMS
    Link(PDF 278 KBDownload Acrobat Reader.
    AuthorsE. A. Alsema, E. Nieuwlaar
    DescriptionAn expert workshop was held as part of the International Energy Agency Photovoltaic Power Systems Implementing Agreement Programme, to address these environmental aspects of PV power systems. The objectives of the workshop were:
  • Review/overview of issues and approaches regarding environmental aspects of PV power systems;
  • Enhanced clarity and consensus regarding well-known aspects like Energy Pay-Back Time;
  • Identification of issues of environmental importance regarding PV power systems ('hot spots');
  • Identification of issues requiring further attention ('white spots');
  • VenueIEA PVPS Task 1 Workshop 25-27 June 1997 Utrecht, The Netherlands Report no. 97072
    SourceUtrecht University
    Document TypeFinal Report (Adobe Postscript file)
    Resource Date12/1997


    Post Date02/11/2005
    TitleENVIRONMENTAL ASPECTS OF SOLAR CELL MODULES
    Link(PDF 466 KBDownload Acrobat Reader.
    AuthorE. A. Alsema
    Descriptionmulticrystalline silicon, amorphous silicon, cadmium telluride and copper indium selenide are reviewed with special attention to future expected technology developments. For each module type an assessment is made of the potential environmental impacts in case of large scale implementation of the technology. In principle the entire module life cycle is taken into consideration: from resource mining, via module production and module utilization until module decommissioning and waste handling. In the report for each module type the following aspects are discussed: energy requirements and energy pay-back time, material requirements and resource depletion, environmental emissions, waste handling, possibilities for recycling of modules, occupational health and safety and external safety.
    VenueReport nr. 96074 ISBN 90-73958-17-2 Netherlands Agency for Energy and the Environment (NOVEM)
    SourceUtrecht University
    Document TypeFinal Report (Adobe Postscript file)
    Resource Date08/1996

    Back to Top

    Quarterly Reports


    Post Date05/09/2005
    TitleSTABILITY, YIELD AND EFFICIENCY OF CDS/CDTE DEVICES
    Link(MS Word 70 KB
    AuthorW. S. Sampath
    Description  During this quarter, we have progressed on the tasks outlined in our SOW for Phase I.   Reproducibility of device efficiency and stability has been demonstrated during long duration operation of the system with a single charge loading for the CdS, CdTe and CdCl2 process. Currently efforts are underway to advance the back contact processing to the same level as outlined in the SOW.  Preliminary results on interconnection have yielded very promising results. Mathematical modeling of a package design has yielded results that show that moisture can be kept from our device for 22 years at 65C temperature with saturated humidity. Hardware to perform steady state photocapacitance (PHCAP) has been designed, built and tested in our laboratory. The effect of processing on the deep states in CdTe devices can be seen quantitatively. Optimum process conditions lead to lower photocapacitance signals. Many devices and CdS/CdTe samples have been provided to many groups including Larry Olsen of PNNL. Based on our current progress, no difficulties are anticipated in successfully completing the future targets outlined in the SOW.             In addition to the tasks outlined above, two members of our team attended the 31st IEEE PVSC.  Two oral presentations (preprints were sent to you earlier) were given.  In addition, a poster was presented at the ICTMC conference and this paper has been accepted for publication in a journal. A loadlock system for the 16" X 16" substrates has been designed and constructed and is being tested. This activity is supported by another program from DOE-EERE and cost shared by NSC. Two scientists from GE Global Research were given a detailed tour of our facilities and a detailed presentation of our technology was made.
    VenueXXL-5-44205-02 to Colorado State University
    SourceColorado State University
    Document TypeQuarterly Report (Word document)
    Resource Date03/2028


    Post Date09/09/2008
    TitleCHARACTERIZATION AND ANALYSIS OF CIS AND CDTE CELLS
    Link(PDF 94 KBDownload Acrobat Reader.
    AuthorJ. R. Sites
    DescriptionDiscusses (contac) barrier measurement technique, CdTe internal photoemission measurement, non-uniform CdTe barriers affecting "roll-over", CdTe cells with thin CdS layers, sheet resistance and fill factor issues, the effect of shunts on cell performance contour plots (correlations of Voc, Jsc, and FF with material parameters, and collaborative work.
    VenueColorado State University, Fort Collins, CO, subcontract XXL-5-44205-03, quarterly report 
    SourceColorado State University
    Document TypeQuarterly Report (Adobe Postscript file)
    Resource Date06/02/2009


    Post Date02/24/2009
    TitleCHARACTERIZATION OF THE ELECTRONIC AND CHEMICAL STRUCTURE AT THIN FILM SOLAR CELL INTERFACES
    Link(PDF 110 KBDownload Acrobat Reader.
    AuthorC. Heske
    DescriptionWe have initiated a detailed study of the CdS/CIGSe interface formation for world-record-class samples. A substantial data set has been recorded, and additional data-taking is currently ongoing.  A series of XPS survey spectra is shown that were taken as a function of CdS thickness. Corresponding completed solar cell devices yielded efficiencies in the 15% range, while we are currently also investigating a sample series with efficiencies around 18%. These spectra, to-gether with detail spectra of each core level, the valence band maxima, and the work function are cur-rently being analyzed to develop a comprehensive picture of the electronic structure of these two CdS/CIGSe interface systems.
    VenueSubcontract XXL-5-44205-12 with U. Nevada, Las Vegas, quarterly report
    SourceUniversity of Nevada, Las Vegas
    Document TypeQuarterly Report (Adobe Postscript file)
    Resource Date01/15/2009


    Post Date03/11/2009
    TitleFABRICATION AND PHYSICS OF CDTE DEVICES BY SPUTTERING
    Link(PDF 471 KBDownload Acrobat Reader.
    AuthorsA. Compaan, R. W. Collins, V. G. Karpov, D. Giolando
    DescriptionRTSE has been applied to investigate the dielectric functions of CdTe and CdS thin films sputtered at different temperatures. These dielectric functions are modeled using the critical point (CP) parabolic band approximation. Key characteristics can be deduced including grain size, excitation group speeds, stress, and temperature from the CP parameters. Capabilities for on-line optical monitoring are sought to provide information, not only on layer thicknesses and compositions, but also on grain size, stress, and temperature. As a first application, the parameterization was used to analyze the ellipsometric spectra of a stepwise etched CdTe solar cell. In this study, depth profiles in the void and grain size near the CdTe/CdS interface have been obtained.
    Venueuniversity of Toledo, subcontract ZXL-5-44205-01, quarterly report
    SourceUniversity of Toledo
    Document TypeQuarterly Report (Adobe Postscript file)
    Resource Date11/19/2008


    Post Date11/21/2008
    TitleCHARACTERIZATION OF THE ELECTRONIC AND CHEMICAL STRUCTURE AT THIN FILM SOLAR CELL INTERFACES
    Link(PDF 107 KBDownload Acrobat Reader.
    AuthorC. Heske
    DescriptionThis project is devoted to deriving the electronic structure of interfaces in Cu(In,Ga)(S,Se)2 and CdTe thin film solar cells. By using a unique combination of spectroscopic methods (photoelectron spectroscopy, inverse photoemission, and X-ray absorption and emission) a comprehensive picture of the electronic (i.e., band alignment in the valence and conduction band) as well as chemical structure is painted.

    In February this year, the NREL group announced to have achieved a new world record effi-ciency (19.9%) for Cu(In,Ga)Se2 ?CIGSe? ? based thin-film solar cells (Ingrid Repins, Miguel A. Con-treras, Brian Egaas, Clay DeHart, John Scharf, Craig L. Perkins, Bobby To and Rommel Noufi, 19.9%-efficient ZnO/CdS/CuInGaSe2 Solar Cell with 81.2% Fill Factor, Prog. Photovolt. 16, 235 (2008).) This recent efficiency gain (compared to the former world record - 19.5%), is believed to be caused by a small ? but apparently significant ? change in the three-stage process. In comparison to the deposition process used earlier, the difference resulting in the recent world record CIGSe absorber was a termina-tion of the third (and thus last) stage without Ga and hence is considered to be ?In-terminated?.

    In order to shed light on the expected different chemical surface structure, we investigated a sample from the world record absorber batch (M2992) by x-ray photoelectron spectroscopy (XPS) and xray excited Auger electron spectroscopy (XAES). Both techniques are very surface sensitive (information depth a few nm) and thus well suited to address questions of surface termination. In addition, we also characterized a CIGSe absorber (M2995) deliberately terminated with Ga for comparison.
    VenueUniversity of Nevada, Las Vegas, subcontract XXL-5-44205-12, quarterly report
    SourceUniversity of Nevada, Las Vegas
    Document TypeQuarterly Report (Adobe Postscript file)
    Resource Date09/15/2008


    Post Date11/04/2008
    Title

    PROCESSING, MATERIALS, DEVICES AND DIAGNOSTICS FOR THIN FILM PHOTOVOLTAICS: FUNDAMENTAL AND MANUFACTURING ISSUES

    Link(PDF 365 KBDownload Acrobat Reader.
    AuthorR. W. Birkmire
    Description

    The Effort was focused on two sub-tasks: (1) fabrication of devices with thin CdTe absorber layers, and (2) development of mechanically flexible CdTe cells by deposition onto a temporary support followed by transfer to a flexible polymer substrate.

    Best-cell J-V results for VT cells with thin CdTe absorber layers using vapor CdCl2 treatment at 480ºC with 2 minute CdCl2

    ?m)

    VOC

    (mV)

    JSC

    (mA/cm2)

    FF

    (%)

    ?

    (%)

    3.0

    788

    23.1

    64.0

    11.8

    1.5

    807

    23.8

    56.8

    10.9

    1.0

    743

    23.4

    54.8

    9.5

    0.8

    723

    22.5

    50.5

    8.2

     

    VenueInstitute of Energy Conversion, University of Delaware, subcontract ADJ-30630-12, monthly report
    SourceUniversity of Delaware
    Document TypeQuarterly Report (Adobe Postscript file)
    Resource Date08/27/2008


    Post Date11/04/2008
    TitlePROCESSING, MATERIALS, DEVICES AND DIAGNOSTICS FOR THIN FILM PHOTOVOLTAICS: FUNDAMENTAL AND MANUFACTURABILITY ISSUES
    Link(PDF 439 KBDownload Acrobat Reader.
    AuthorR. W. Birkmire
    DescriptionThe report highlights progress  for CdTe-based solar cells. During this period, effort was focused on two sub-tasks: (1) deposition and characterization of device structures with thin CdTe absorber layers and (2) deposition of CdTe/CdS/ITO onto a temporary supporting superstrate for transfer to a flexible polymer substrate.
    VenueInstutute of Energy Conversion, University of Delaware, subcontract ADJ-1-30630-12, monthly report
    SourceUniversity of Delaware
    Document TypeQuarterly Report (Adobe Postscript file)
    Resource Date08/08/2008


    Post Date11/19/2008
    TitleFABRICATION AND PHYSICS OF CDTE DEVICES BY SPUTTERING
    Link(PDF 1.1 MBDownload Acrobat Reader.
    AuthorsA. Compaan, R. W. Collins, V. G. Karpov, D. Giolando
    Description

    This report presents: 1) properties of phosphorus-doped CdTe films prepared by sputtering from pressed targets of CdTe and Cd3P2, 2) optimization studies on ultra-thin CdS/CdTe cells with efficiencies exceeding 10% for 0.5?

    VenueUniversity of Toledo, subcontract ZXL-5-44205-01, (CdTe), quarterly report
    SourceUniversity of Toledo
    Document TypeQuarterly Report (Adobe Postscript file)
    Resource Date08/2008


    Post Date07/09/2008
    TitleCHARACTERIZATION AND ANALYSIS OF CIS AND CDTE CELLS"
    Link(PDF 123 KBDownload Acrobat Reader.
    AuthorJ. R. Sites
    DescriptionWe continued our work on the relationship between voltage and CdS thickness with CdTe cells; the relationship between fill-factor of a cell or module and sheet resistance, geometry, current, and the JSC/VOC ratio; and the effects of local shunts on cell performance. Since the funding of the AVA incubator project took effect, I have shifted our work on CSU and AVA CdTe cells, and the reporting of those results, to the incubator project.
    VenueColoradio State University, Subcontract XXL-5-44205-03, quarterly report
    SourceColorado State University
    Document TypeQuarterly Report (Adobe Postscript file)
    Resource Date03/21/2008


    Post Date04/23/2008
    TitleFABRICATION AND PHYSICS OF CDTE DEVICES BY SPUTTERING
    Link(PDF 744 KBDownload Acrobat Reader.
    AuthorsA. Compaan, R. W. Collins, V. G. Karpov, D. Giolando
    DescriptionWe have developed a theory of ac response by systems of distributed diodes in parallel with resistors and capacitors connected through resistive electrodes that can represent many practical devices including photovoltaics and Schottky junctions. In particular, we have shown that:
    1. There exist three lateral decay lengths related to the system diodes, shunt resistors, and capacitances respectively that determine the effective frequency-dependent lateral decay length L and describe the physics of ac response in such distributed systems;
    2. The response is frequency-independent below a certain characteristic frequency, above which it strongly depends on testing frequency;
    3. The 1D and 2D systems behave similarly in the large device regime, l >> L, where l is the device lateral dimension, while in the small device regime, l << L, 2D systems exhibit certain unique behavior;
    4. Both the capacitance and conductance are described by closed form analytical expressions as functions of frequency and dc bias and are parametrically dependent on system material characteristics;
    5. Our theoretical results establish a basis for a type of admittance characterization applicable to a wide variety of semiconductor structures including photovoltaics and Schottky junctions.
    VenueUniversity of Toledo (CdTe), subcontract ZXL-5-44205-01, quarterly report
    SourceUniversity of Toledo
    Document TypeQuarterly Report (Adobe Postscript file)
    Resource Date03/2008


    Post Date04/23/2008
    TitleFABRICATION AND PHYSICS OF CDTE DEVICES BY SPUTTERING
    Link(PDF 466 KBDownload Acrobat Reader.
    AuthorsA. Compaan, R. W. Collins, V. G. Karpov, D. Giolando
    DescriptionWe have observed that routine maintenance procedures such as CdTe target replacement and cleaning of the corresponding ground shield influence the deposition rate and the quality of the film. For example it has been found that the pinhole density reaches its maximum right after the cleaning of the ground shield and remains relatively high for a few subsequent depositions. On the other hand once a coating of CdTe is developed on the ground shield the pinhole density becomes vanishingly small although the deposition rate can slow by as much as 50% as the ground shroud coating builds up.
    Not only does this present difficulties for maintaining a solid efficiency baseline throughout the sputtering target life cycle, it also reflects changes in the sputtering plasma. Being a plasma-assisted deposition technique, magnetron sputtering offers a wide range of tweaking opportunities to create thin films with desired physical properties. Without good understanding of the plasma processes the sputtering process can become excessively complicated.
    The basic principles of magnetron sputtering are well known and readily available in the literature. It is important to apply those principles to a specific deposition process and equipment. In this report we provide the results of the potential distribution measurements done in one of the CdTe deposition chambers at the University of Toledo. This is the same chamber we recently reported the study of the deposition rate and the CdTe film morphology. These measurements of the plasma allow us to link the typical process control data from pressure gauges and power meters to the properties of the deposited film to potential distributions inside the chamber and plasma parameters extracted from the Langmuir probe measurements.
    VenueUniversity of Toledo (CdTe), subcontract ZXL-5-44205-01, quarterly report
    SourceUniversity of Toledo
    Document TypeQuarterly Report (Adobe Postscript file)
    Resource Date03/2008


    Post Date12/13/2007
    TitleBARRIER COATINGS AND STABILITY OF THIN FILM SOLAR CELLS
    Link(PDF 51 KBDownload Acrobat Reader.
    AuthorL. Olsen
    DescriptionData were acquired for SSI mini-modules that were coated with PNNL barrier coatings based on the new polymer blend. Results were obtained for coated modules subjected to 85ºC and dry conditions, and modules with barrier coatings of thicknesses ranging from 3 microns to 10 microns. The 85ºC/Dry testing was done to determine if the coatings react in a negative way with the devices. We found that all coated modules were stable in the 85ºC/Dry conditions. Figure 3 gives results for a module with a coating 10 microns thick. Basically, the module is stable. Thus, it is very clear that the SSI mini-module can tolerate 85ºC and dry conditions, but not a stress of 86ºC/85%RH.
    Figure 4 gives results for coated mini-modules with the results for a bare module shown for contrast. Although the PNNL barrier coatings have made a tremendous difference, degradation still occurs. The fact that all modules degrade at the same rate, regardless of coating thickness, provides an important clue as to the cause of the degradation. Based on our overall experience, the effectiveness of the barrier coatings should improve with thickness. In general, we find that there are three cell features that can lead to defects in the multi-layer coatings which in turn provide a path for water diffusion:
    (i) Surface roughness;
    (ii ) Inadequate edge seal;
    (iii) Cuts separating individual cells.
    Since the rate of degradation of efficiency is independent of the coating thickness, we suspect that features (ii) and (iii) are most likely responsible for causing pathways of moisture diffusion. Further studies are required before this problem(s) can be clearly identified. However, the results achieved with the new polymer blends in an 85/85 environment are very encouraging.
    VenuePacific Northwest National Laboratory, subcontract DAX-4-44239-01, quarterly report
    SourcePacific Northwest National Lab (PNNL)
    Document TypeQuarterly Report (Adobe Postscript file)
    Resource Date12/01/2007


    Post Date02/07/2008
    TitleCHARACTERIZATION OF THE ELECTRONIC AND CHEMICAL STRUCTURE AT THIN FILM SOLAR CELL INTERFACES
    Link(PDF 122 KBDownload Acrobat Reader.
    AuthorC. Heske
    DescriptionWe have derived the electronic structure of the CdS/CIGSe interface in thin film solar cells prepared by NREL. The conduction band alignment at the CdS/CIGSe interface is flat, as expected for a high efficiency CIGSe solar cell. Furthermore, we find direct evidence for a strong interface dipole. Together with the previously reported lack of significant intermixing at the CdS/CIGSe interface, we thus find a modified electronic and chemical interface structure compared to previously studied (less efficient) devices from other manufacturers.
    VenueUniversity of Nevada, Las Vegas, subcontract XXL-5-44202-12, quarterly report
    SourceUniversity of Nevada, Las Vegas
    Document TypeQuarterly Report (Adobe Postscript file)
    Resource Date11/15/2007


    Post Date11/13/2007
    TitleFABRICATION AND PHYSICS OF CDTE DEVICES BY SPUTTERING
    Link(PDF 447 KBDownload Acrobat Reader.
    AuthorsA. Compaan, R. W. Collins, V. G. Karpov
    DescriptionWe describe a series of experiments involving peel-off of the back contact and then recontacting again while several measurements were made along the way with x-ray fluorescence to monitor the Cu signal and other measurements were made with high resolution SEM and TEM. Finally, x-ray fine structure measurements provide information on the bonding of Cu in the finished cells. All three measurements together provide evidence that Cu remains localized predominantly very near the back contact in the UT sputtered cells with evaporated Cu/Au back contacts.
    VenueUniversity of Toledo, subcontract ZXL-5-44205-01, quarterly report
    SourceUniversity of Toledo
    Document TypeQuarterly Report (Adobe Postscript file)
    Resource Date11/05/2007


    Post Date11/13/2007
    TitleFABRICATION AND PHYSICS OF CDTE DEVICES BY SPUTTERING
    Link(PDF 495 KBDownload Acrobat Reader.
    AuthorsA. Compaan, R. W. Collins, V. G. Karpov
    DescriptionThe focus of research during this quarter was on back contact development and on the advanced analysis of CdS using real time spectroscopic ellipsometry and its potential applications for monitoring of production lines for CdTe solar cell fabrication. 

    A dielectric function parameterization is possible that uses the grain size as a controlling parameter -- similar to what is now possible with void fraction. 

    VenueU. Toledo, subcontract ZXL-5-44205-01, quarterly report
    SourceUniversity of Toledo
    Document TypeQuarterly Report (Adobe Postscript file)
    Resource Date11/05/2007


    Post Date01/14/2008
    TitlePROCESSING, MATERIALS, DEVICES AND DIAGNOSTICS FOR THIN FILM PHOTOVOLTAICS: FUNDAMENTAL AND MANUFACTURABILITY ISSUES
    Link(PDF 258 KBDownload Acrobat Reader.
    AuthorR. W. Birkmire
    DescriptionThe IEC VT deposition process is being used to deposit CdTe films with thickness approaching 1 micron suitable for cells with 11% conversion efficiency. However, the thickness uniformity of the obtained deposit is more difficult to control in the high deposition rate regime (10 mm/min) than for baseline thickness ~5-7 mm.  Also, the films are more prone to having voids in the CdTe layer, which become shunt paths in devices. The post-deposition processing becomes more critical since thinner films have smaller grains and are therefore more sensitive to grain boundary-enhanced processes such as interdiffusion of CdS-CdTe, oxide penetration, and penetration from any etchants used to process the back contact. In the previous year of work, we showed that 11% baseline performance could be maintained with 1.5-3 micron thick CdTe by reducing the CdCl2 vapor treatment processing time, using milder etchants, and reducing the Cu quantity at the back contact, either by depositing a thinner layer or by incorporating the Cu into the ZnTe contact.
    VenueInstitute of Energy Conversion, University of Delaware, subcontrat ADJ-1-30630-12, monthly report
    SourceUniversity of Delaware
    Document TypeQuarterly Report (Adobe Postscript file)
    Resource Date10/25/2007


    Post Date11/29/2007
    TitleCHARACTERIZATION AND ANALYSIS OF CIS AND CDTE CELLS
    Link(PDF 70 KBDownload Acrobat Reader.
    AuthorJ. R. Sites
    DescriptionDuring the past quarter, two students completed their PhD and one other is preparing for his defense. At the same time, we expanded our work on the analysis of cells with non-uniformities, we began a collaboration on CIGS made with laser-assisted deposition, and we continued several measurement and analysis projects in collaboration with other laboratories.
    VenueColorado State University, subcontract XXL-5-44205-03, quarterly report
    SourceColorado State University
    Document TypeQuarterly Report (Adobe Postscript file)
    Resource Date09/24/2007


    Post Date11/21/2007
    TitlePROCESSING, MATERIALS, DEVICES AND DIAGNOSTICS FOR THIN FILM PHOTOVOLTAICS: FUNDAMENTAL, AND MANUFACTURABILITY ISSUES
    Link(PDF 321 KBDownload Acrobat Reader.
    AuthorR. W. Birkmire
    Description

    Issues related to high throughput processing of and junction- limiting factors in thin film CdTe solar cells are reported. Concerns over possible sources of impurity contamination of CdTe has prompted further analysis of the influence of soda lime glass (SLG) SLG/SnO2 substrate preparation as well as the chemistry of the CdS growth and its effect on the CdS-CdTe junction region. With respect to high throughput deposition and CdTe usage, we have deposited CdTe films by VT with sub-micron thickness having low pinhole density.

    VenueIEC, University of Delaware, subcontract ADJ-1-30630-12, monthly report
    SourceUniversity of Delaware
    Document TypeQuarterly Report (Adobe Postscript file)
    Resource Date09/21/2007


    Post Date08/15/2007
    TitleBARRIER COATINGS AND STABILITY OF THIN FILM SOLAR CELLS
    Link(PDF 89 KBDownload Acrobat Reader.
    AuthorL. Olsen
    DescriptionThe key objectives of the program are to develop low cost barrier coatings for CIS and CdTe solar cells and to develop an improved understanding of the effects of water on the stability of these types of cells. The scope of this work entails investigations multilayer, barrier coatings for CIS and CdTe thin film solar cells, and studies of stability issues, particularly those related to moisture ingress. Investigation of barrier coatings on SSI and CSU devices will continue in an effort to establish effective approaches encapsulate CIS and CdTe modules. Studies will also be directed towards issues concerning cost of the coating process. The program will be structured into three major tasks: (1) Barrier coatings and stability studies for CIS Solar Cells; (2) Barrier coatings and stability studies for CdTe solar cells; (3) Low cost coating process development.
    VenuePNNL, agreement DAX-4-44239-01, quarterly report
    SourcePacific Northwest National Lab (PNNL)
    Document TypeQuarterly Report (Adobe Postscript file)
    Resource Date06/2007


    Post Date08/03/2007
    TitleCHARACTERIZATION AND ANALYSIS OF CIS AND CDTE CELLS
    Link(PDF 66 KBDownload Acrobat Reader.
    AuthorJ. R. Sites
    DescriptionReports CIGS nonuniformities, CdTe efficiency (n-p vs. p-i-n), light bias QE, and CdS thickness variation in CdTe cells (all presented at the MRS Spring meeting)
    VenueColorado State University (Sites), subcontract XXL-5-44205-03, quarterly report
    SourceColorado State University
    Document TypeQuarterly Report (Adobe Postscript file)
    Resource Date05/27/2007


    Post Date08/15/2007
    TitleBARRIER COATINGS AND STABILITY OF THIN FILM SOLAR CELLS
    Link(PDF 56 KBDownload Acrobat Reader.
    AuthorL. Olsen
    DescriptionOur investigations to date were based on Shell Solar, Inc. (SSI) cells and mini-modules. We found that these cells were extremely vulnerable to damp heat effects. These devices are no longer available to PNNL due to the closing of the Chatsworth CIGS operation. However, we have a supply of 2 in. x 2 in. mini-modules that were used in recent studies that are discussed in this report. Moisture ingress is apparently not an issue if modules are fabricated with glass-to-glass construction. It is clear, however, that CIGS cells and modules fabricated on flexible substrates must have an effective barrier coating. As a result, we plan to concentrate on establishing baseline information concerning the effects of damp heat on CIGS.
    VenuePNNL, agreement DAX-4-44239-01, quarterly report
    SourcePacific Northwest National Lab (PNNL)
    Document TypeQuarterly Report (Adobe Postscript file)
    Resource Date05/2007


    Post Date06/25/2007
    TitlePROCESSING, MATERIALS, DEVICES AND DIAGNOSTICS FOR THIN FILM PHOTOVOLTAICS: FUNDAMENTAL AND MANUFACTURING ISUES
    Link(PDF 235 KBDownload Acrobat Reader.
    AuthorR. W. Birkmire
    DescriptionIssues related to high throughput processing of and junction- limiting factors in CdTe solar cells are reported. Based on the effects of TCO/substrate cleaning described in the previous report, we continued with the study of uncontrolled impurities originating in the glass/SnO 2 substrate. It is vital that this source of variability in film morphology and device performance is eliminated prior to development of cells with sub-micron absorber thickness and evaluation of approaches for VOC > 900 mV. In this report, we present the details of procedures used to establish a performance baseline with cell efficiency >11% for processing CdTe/CdS cells with vapor transport deposited CdTe onto moving commercially available substrates at high growth rate (~10 m/min) using rapid post-deposition processing, with less than 1 min per processing step.  
    VenueInstitute of Energy Conversion, U. Delaware, Suibcontract ADJ-1-30630-12, monthly report
    SourceUniversity of Delaware
    Document TypeQuarterly Report (Adobe Postscript file)
    Resource Date04/24/2007


    Post Date03/14/2007
    TitlePROCESSING, MATERIALS, DEVICES AND DIAGNOSTICS FOR THIN FILM PHOTOVOLTAICS: FUNDAMENTAL AND MANUFACTURABILITY ISSUES
    Link(PDF 146 KBDownload Acrobat Reader.
    AuthorR. W. Birkmire
    DescriptionA study is warranted to determine the effects of glass handling and cleaning and buffer layer formation on the grain structure and variability in performance of the CdTe devices. Statistical analysis of the device performance of more than 450 VT devices using the baseline process revealed a V OC distribution with a sharp maximum at 800 mV and excursions to 850 mV. The effort to demonstrably improve VOC and to fabricate cells with ultra-thin absorber layers will require a tighter baseline distribution. Due to the combination of superstrate configuration and high processing temperatures used for VT CdTe solar cells, uncontrolled impurities originating in the glass/SnO2 and its handling can become trapped in the structure and critically affect junction quality, in which case the intrinsic buffer layer may serve as a diffusion barrier as well as an electronic circuit element. The role of the Ga2O3 in mitigating effects from the SnO2 is demonstrated in for cells made from a single VT deposition with and without Ga2O3 and CdS in the window side of the device.
    VenueIEC, University of Delaware, subcontract ADJ-1-30630-12, monthly report
    SourceN/A
    Document TypeQuarterly Report (Adobe Postscript file)
    Resource Date01/31/2007


    Post Date02/15/2007
    TitleCHARACTERIZATION OF THE ELECTRONIC AND CHEMICAL STRUCTURE AT THIN FILM SOLAR CELL INTERFACES
    Link(PDF 348 KBDownload Acrobat Reader.
    AuthorsM. Baer, C. Heske
    Description

    This project is devoted to deriving the electronic structure of interfaces in Cu(In,Ga)(S,Se)2 and CdTe thin film solar cells. By using a unique combination of spectroscopic methods (photoelectron spectroscopy, inverse photoemission, and X-ray ab-sorption and emission) a comprehensive picture of the electronic (i.e., band alignment in the valence and conduction band) as well as chemical structure can be painted. The work focuses on (a) deriving the bench mark picture for world-record cells, (b) analyze state-of-the-art cells from industrial processes, and (c) aid in the troubleshooting of cells with substandard performance. In the last months, we started to investigate CdS/CIGSe samples provided by the National Renewable Energy Laboratory.

    We do not find any evidence for a very strong intermixing process (i.e., S atoms diffusing into the substrate). However, the environment of the sulfur atoms at the growth start of the interface clearly deviates from a perfect CdS environment. Whether this is due to a less perfect crystalline structure (i.e., the formation of very small nm-scale nanoparticles) or some S diffusing into the CIGSe absorber can not unambiguously be differentiated.

    VenueU. Nevada, Las Vegas, subcontract XXL-5-44205-12, quarterly report
    SourceUniversity of Nevada, Las Vegas
    Document TypeQuarterly Report (Adobe Postscript file)
    Resource Date01/11/2007


    Post Date03/14/2007
    TitleBARRIER COATINGS AND STABILITY OF THIN FILM SOLAR CELLS
    Link(PDF 47 KBDownload Acrobat Reader.
    AuthorL. Olsen
    DescriptionStudies of photoluminescence in CdTe solar cell structures continued. The objective of this effort is to determine if the PL spectrum for a CdTe device is affected by stress. In particular, we are interested in determining if moisture affects carrier properties. Samples studied were cell structures without back contacts previously provided by CSU. Figure 1 describes our approach to PL studies. This figure is repeated from the last quarterly report. An excitation wavelength of 580 nm was used and band gap emission observed for the excitation beam entering through the glass and through the CdTe side.
    VenuePNNL, DAX-4-44239-01, quarterly report
    SourcePacific Northwest National Lab (PNNL)
    Document TypeQuarterly Report (Adobe Postscript file)
    Resource Date01/2007


    Post Date01/30/2007
    TitleFABRICATION AND PHYSICS OF CDTE DEVICES BY SPUTTERING
    Link(PDF 1.0 MBDownload Acrobat Reader.
    AuthorsA. Compaan, R. W. Collins, V. G. Karpov
    DescriptionThis progress report covers the First Quarter of Phase 2 for the period from June 1, 2006 through August 31, 2006, of the above Thin Film Photovoltaic Partnership Program subcontract. The focus of research during this quarter was on materials issues including high rate deposition and in situ real time analysis of film growth and post-processing. Results of high rate sputter deposition (Task 2.1.3) and real-time spectroscopic ellipsometry study of rf-sputtered solar cells (task 2.3.3) have been described.   The most important data obtained from this study are the optical properties of the alloys as functions of composition as well as measurement temperature.
    VenueUniversity of Toledo (CdTe), subcontract ZXL-5-44205-01, Quarterly Report
    SourceUniversity of Toledo
    Document TypeQuarterly Report (Adobe Postscript file)
    Resource Date12/2006


    Post Date01/08/2007
    TitleCHARACTERIZATION AND ANALYSIS OF CIS AND CDTE CELLS
    Link(PDF 106 KBDownload Acrobat Reader.
    AuthorJ. R. Sites
    Description

    Alan Davies has been working closely with Sampath?s group, Al Enzenroth in particular, to explore buffer layers that would allow the CSU cells to be made with thinner CdS without compromising performance in other ways. Alan Fahrenbruch, also using CdTe cells fabricated by Sampath?s group, has examined transient effects related to photoconductivity and has related these to anomalous AQE effects.

    Ana Kanevce has added nonuniformities in diode voltage to her simulations of CIGS cells with submicron absorber layers. Several physical conditions (reduced local Ga concentration, reduced local thickness, reduced back electron reflector) can be well approximated by a weak diode with a lower value of VOC in the midst of an array of normal diodes.

    Ana also worked with Raghu Bhattacharya of NREL on the analysis of CIGS cells that that were fabricated with a solution-grown CdZnS buffer layer. The best of these cells achieved 19.5% efficiency, equal to that achieved with NREL?s standard CdS buffer. At short wavelengths, the CdZnS buffer did achieve about 2 mA/cm2 higher current than the CdS buffer, but it also had slightly less collection in the longer wavelength region.

    VenueColorado State University, subcontract XXL-5-44205-03, quarterly report
    SourceColorado State University
    Document TypeQuarterly Report (Adobe Postscript file)
    Resource Date11/27/2006


    Post Date12/22/2006
    TitleBARRIER COATINGS AND STABILITY OF THIN FILM SOLAR CELLS
    Link(PDF 106 KBDownload Acrobat Reader.
    AuthorL. Olsen
    DescriptionNo substrates with CdTe cell structures were received this quarter from CSU or UT. As a result, studies of photoluminescence in CdTe solar cell structures were initiated. The objective of this effort is to determine if the PL spectrum for a CdTe device is affected by stress. In particular, we are interested in determining if moisture affects carrier properties. Samples studied were cell structures without back contacts provided a year ago by CSU. The approach to the PL studies is described in Figure 1. An excitation wavelength of 580 nm was used and band gap emission observed for the excitation beam entering the through the glass and through the CdTe side.
    VenuePNNL, Memorandum Purchase Order ("subcontract") DAX-4-44239-01, quarterly report
    SourcePacific Northwest National Lab (PNNL)
    Document TypeQuarterly Report (Adobe Postscript file)
    Resource Date11/2006


    Post Date12/20/2006
    TitleMANUFACTURING PROCESS OPTIMIZATION TO IMPROVE STABILITY, YIELD, AND EFFICIENCY OF CDS/CDTE PV DEVICES
    Link(PDF 98 KBDownload Acrobat Reader.
    AuthorW. S. Sampath
    DescriptionWe have progressed on the tasks outlined in our SOW for Phase II. Significant advances to the design of module packaging have been made. Desiccant containing materials for the edge seal and sealing of the holes in the back glass have been tested in damp heat tests at NREL with very promising results. Hardware modifications to the pilot system for automated cooling of the substrate in vacuum have been completed and device efficiencies of 11.83 % have been made in "all forward" process. Significant progress has been made in characterizing films with ellipsometry and the use of ellipsometry for quality control is being investigated. Efforts to improve device efficiency and advance device characterization are underway. Based on our current progress, no difficulties are anticipated in successfully completing the future targets outlined in the SOW. A prototype production system to process 16.5x16.5 inch substrates continues to be advanced. This activity is supported by another program from DOE-EERE and cost shared by National Starch and Chemicals (NSC).
    VenueColorado Stae University, subcontract XXL-5-44205-02, quarterly report
    SourceColorado State University
    Document TypeQuarterly Report (Adobe Postscript file)
    Resource Date10/17/2006


    Post Date12/08/2006
    TitleCHARACTERIZATION OF THE ELECTRONIC AND CHEMICAL STRUCTURE AT THIN FILM SOLAR CELL INTERFACES
    Link(PDF 199 KBDownload Acrobat Reader.
    AuthorC. Heske
    DescriptionThis project is devoted to deriving the electronic structure of interfaces in Cu(In,Ga)(S,Se)2 and CdTe thin film solar cells.  By using a unique combination of spec-troscopic methods (photoelectron spectroscopy, inverse photoemission, and X-ray ab-sorption and emission) a comprehensive picture of the electronic (i.e., band alignment in the valence and conduction band) as well as chemical structure can be painted. The work focuses on (a) deriving the bench mark picture for world-record cells, (b) analyze state-of-the-art cells from industrial processes, and (c) aid in the troubleshooting of cells with substandard performance.
    We could gather first results for Cu(In,Ga)Se2 (?CIGSe?) and Cu(In,Ga)(S,Se2) (?CIGSSe?) samples prepared by the group of W. Shafarman (Institute of Energy Conversion, University of Delaware). The aim of the conducted experiments is to shed light on the deeply buried absorber/back contact interface in terms of its chemical and electronic properties.  We had to develop a suitable lift-off (or cleavage) technique, which allowed us to cleave the absorber/Mo/glass samples at the desired interface.  It turned out that gluing the front side of the absorber/Mo/glass thin film stack to a stainless a steel plate using a conductive (Ag-containing) epoxy allows a subsequent division of the stack in two parts and provides the necessary conductivity for the PES measurements. In all cases the thin film stack cleaved at the absorber/Mo inter-face. However, there were differences in terms of the area exposed after lift-off. Compar-ing the CIGSe/Mo/glass and CIGSSe/Mo/glass samples with respect to their cleavage behavior, it seems that for the latter it is rather easy to lift off large areas (in the range of cm2). This is favorable with respect to the characterization by PES but even more impor-tant for the planned inverse photoemission (IPES) measurements, since the IPES detector is not able to ?artificially? reduce the spot size of the e-gun on the sample (which is approx. 1 cm^2) as it can easily be done in the PES case, probing differently sized areas by using different lens modes of the electron analyzer.
    VenueU. Nevada, Las Vegas, Subcontract No. XXL-5-44205-12, quarterly report
    SourceUniversity of Nevada, Las Vegas
    Document TypeQuarterly Report (Adobe Postscript file)
    Resource Date10/15/2006


    Post Date11/07/2006
    TitlePROCESSING, MATERIALS, DEVICES AND DIAGNOSTICS FOR THIN FILM PHOTOVOLTAICS: FUNDAMENTAL AND MANUFACTURABILITY ISSUES
    Link(PDF 1.9 MBDownload Acrobat Reader.
    AuthorR. W. Birkmire
    DescriptionDuring this reporting period, effort continued on high throughput fabrication of thin film CdTe/CdS cells with CdTe deposited by vapor transport (VT). The CdS films were deposited by chemical surface deposition (CSD) onto 10 x 10 cm plates of Pilkington TEC15 SnO 2/glass.  Particular focus was placed on Ga deposition for the high resistance (HR) Ga2O3  buffer layer and on the chemical state of the TCO. Analysis of the chemical state of the CdTe surface after aniline treatment continued and shows that, like other etchants, the aniline treatment removes surface-bound oxygen and chlorine, generates Te, but also may leave a trace hydrocarbon residue behind.    
    VenueIEC (U. Delaware), subcontract ADJ-1-30630-12, quarterly report
    SourceUniversity of Delaware
    Document TypeQuarterly Report (Adobe Postscript file)
    Resource Date10/04/2006


    Post Date09/28/2006
    TitleBARRIER COATINGS AND STABILITY OF THIN FILM SOLAR CELLS
    Link(PDF 42 KBDownload Acrobat Reader.
    AuthorL. Olsen
    DescriptionEfforts have concentrated on establishing procedures for collaboration with Dr. Sampath's group at CSU and Dr. Compaan's group at the University of Toledo. In both cases, we have supplied patterned SnO2 - coated glass for growth of CdS/CdTe structures. It turns out, however, that removing SnO2 from LOF TEC 15 is not trivial. We received valuable guidance from Dr. Sampath. Referring to Figure 1, we plan to start with SnO2 -coated glass, pattern the SnO2 as illustrated in Figure 1A, send the substrates to CSU and UT for growth of CdS/CdTe devices. In the case of CSU, the back contact will be applied at PNNL for some of the structures. Removing the tin-oxide has turned out to be non-trivial.
    VenuePNNL, Purchase Order DAX-4-44239-01, quarterly report
    SourcePacific Northwest National Lab (PNNL)
    Document TypeQuarterly Report (Adobe Postscript file)
    Resource Date08/2006


    Post Date09/19/2006
    TitlePROCESSING, MATERIALS, DEVICES AND DIAGNOSTICS FOR THIN FILM PHOTOVOLTAICS: FUNDAMENTAL AND MANUFACTURABILITY ISSUES
    Link(PDF 173 KBDownload Acrobat Reader.
    AuthorR. W. Birkmire
    DescriptionCdTe cell fabrication focused on evaluation of alternative high resistance (HR) buffer layers and the influence of ambient composition during vapor transport (VT) CdTe deposition and vapor CdCl2 treatment. Aspects of CdTe surface chemistry were investigated with respect to rapid vapor CdCl2 treatment and anilinine etching.  Bifacial solar cell analysis of cells with different CdTe thickness was carried out to provide detailed understanding of device operation and its relation to processing optimization. 
    VenueIEC, U. of Delaware, subcontract ADJ-1-30630-12, monthly report
    SourceUniversity of Delaware
    Document TypeQuarterly Report (Adobe Postscript file)
    Resource Date07/31/2006


    Post Date07/25/2006
    Title

    BARRIER COATINGS

    Link(MS Word 145 KB
    AuthorL. Olsen
    Description Coatings to protect thin film cells.
    VenueQuarterly Phase 2, #2
    SourcePacific Northwest National Lab (PNNL)
    Document TypeQuarterly Report (Word document)
    Resource Date07/2006


    Post Date07/13/2006
    TitleCHARACTERIZATION AND ANALYSIS OF CIS AND CDTE CELLS
    Link(MS Word 42 KB
    AuthorJ. R. Sites
    DescriptionDuring the past quarter, our group made progress in several areas as outlined below. Several of us participated actively in the CdTe and CIS team meetings. I made a trip to IEC in February to give a colloquium and discussion several topics of mutual interest.  Adjacent to that visit, I attended to the DOE PV module-reliability meeting in Baltimore.  I also participated (not at NREL expense) in the DOE?s SAI-input meeting that took place in Chicago in March.  Our primarily work with industrial partners was LBIC measurements on Nanosolar cells and with assistance to Heliovolt in the design of current-voltage and quantum-efficiency measurement systems for their cells.
    Venue Quarterly Report V (February - April 2006) Subcontract XXL-5-44205-03 For additional information:  www.physics.colostate.edu/groups/photovoltaic
    SourceColorado State University
    Document TypeQuarterly Report (Word document)
    Resource Date07/2006


    Post Date05/30/2006
    TitleINNOVATIVE CHARACTERIZATION OF AMORPHOUS AND THIN-FILM SILICON FOR IMPROVED MODULE PERFORMANCE
    Link(PDF 416 KBDownload Acrobat Reader.
    AuthorJ. D. Cohen
    DescriptionAlthough nc-Si:H does not suffer as severely from light exposure as amorphous silicon, prolonged light soaking typically reduces the conversion efficiency by several percent . Several of our samples were examined both in ?State A?, after a sample had been annealed for 1 hour at 450 K, as well as in ?State B?, a degraded state which we obtained by exposing the sample to 20 hours of red-filtered light (>620 nm) from a tungsten-halogen source at an intensity of 400 mW/cm 2.  Effects of such light soaking could be observed both in the photo-transient spectra as well as in drive-level capacitance profiles (DLCP). We see that the TPC signal changes significantly. In particular, the negative signals near 1.5 eV become significantly positive in State B. This corresponds to a loss of hole collection, even more than was achieved by reducing the measurement temperature from 295 K to 275 K in State A.  What is particularly surprising, however, is that when such a deep defect response is apparent, we consistently have found that it decreased after prolonged light exposure.
    VenueUniversity of Oregon, 3rd Quarterly report, Subcontract ZXL-5-44205-11
    SourceUniversity of Oregon
    Document TypeQuarterly Report (Adobe Postscript file)
    Resource Date05/30/2006


    Post Date05/02/2006
    TitleSTUDIES OF BASIC ELECTRONIC PROPERTIES OF CDTE-BASED SOLAR CELLS
    Link(PDF 22 KBDownload Acrobat Reader.
    AuthorJ. Beach
    DescriptionStudy of Deep Electronic States controlling VOC.
    VenueCSM Extension of ADJ-2-30630-05,
    SourceColorado School of Mines, Golden, CO
    Document TypeQuarterly Report (Adobe Postscript file)
    Resource Date05/01/2006


    Post Date05/30/2006
    TitleBARRIER COATINGS AND STABILITY OF THIN FILM SOLAR CELLS
    Link(MS Word 87 KB
    AuthorL. Olsen
    DescriptionCdTe cell structures provided by CSU were stressed and then characterized with XPS in an effort to understand the effects of moisture on CdTe devices. If we assume the emission is primarily due to oxides on the grain boundaries, it appears that the unknown complex oxide could play a key role in grain boundary passivation.  It could therefore be very valuable to determine the identity of this complex oxide.  Based on results for the stressed cell, significant effects of the 60ºC/90%RH stress may be formation of Cd(OH)2 along grain boundaries, and elimination of the unknown complex Cd-based oxide along the grain boundaries.  If we assume that the unknown oxide is important for grain boundary passivation and/or the hydroxide results in increased recombination at grain boundaries, then it is understandable that both Jsc and Voc would decrease as a result of damp heat.   We conclude, therefore, that damp heat does more than just degrade the contacts in CdTe cells.  In particular, it appears that formation of Cd(OH)2 leads to increased recombination at grain boundaries, which decreases cell quantum efficiency and increases current losses (larger Jo).
    Venue1st Quarterly Report - Phase II: September 1,  2005   --   November 30,  2005 NREL Subcontract:  48027
    SourcePacific Northwest National Lab (PNNL)
    Document TypeQuarterly Report (Word document)
    Resource Date05/2006


    Post Date06/12/2006
    TitleCHARACTERIZATION OF THE ELECTRONIC AND CHEMICAL STRUCTURE AT THIN FILM SOLAR CELL INTERFACES
    Link(PDF 78 KBDownload Acrobat Reader.
    AuthorsM. Baer, C. Heske
    DescriptionEight CdTe materials samples used in actual solar cell were investigated by X-ray emission spectroscopy (XES). This technique provides detailed informations about the chemical properties of the investigated samples. XES as a photon-in photon-out technique probes the ?near-surface? bulk. In our case, where we have focused on the S L2,3 and Cl L2,3 emission, this method has an information depth of about 100 nm.
    Based on the results obtained, we will continue the investigation of CdTe/CdS samples and extend them by investigating customized sample series with UPS and IPES to get insight into the band alignments at the various interfaces of the device structure of an CdTe-based solar cell.  At the recent CdTe R&D team meeting (as well as at the CIS R&D team meeting) we have initiated a sample exchange with several (six) groups from within the Thin Film Photovoltaic Partnership Program. The planned experiments will shed light on the various interfaces in both CIS and CdTe cells. First samples have already been received at UNLV.
    VenueSubcontract XXL-5-44205-12, University Nevada, Las Vegas, quarterly report
    SourceUniversity of Nevada, Las Vegas
    Document TypeQuarterly Report (Adobe Postscript file)
    Resource Date04/15/2006


    Post Date04/19/2006
    TitleCDTE
    Link(PDF 160 KBDownload Acrobat Reader.
    AuthorB. E. McCandless
    DescriptionSummary: The CdTe cell fabrication effort focused on CdTe deposition and post deposition processing to increase throughput and raise baseline cell efficiency. The effect of carrier gas composition and substrate temperature on vapor transport (VT) CdTe film growth and device performance was evaluated. Vapor CdCl2 treatments, which
    allow the treatment temperature to be separated from the CdCl2 and O2 concentration, were refined to allow a new baseline process to be defined with treatments ~ 2 minute in duration. Reduction in treatment time required increasing the treatment temperature of the CdTe/CdS and maintaining the partial pressures of CdCl2 and O2 to ~5 mTorr and
    120 Torr, respectively. Similarly, the aniline photo-activated surface treatment was refined to permit effective Te formation in less than 5 minutes, by increasing the intensity of the incident light. In the area of device performance, analysis of J(V) curves has indicated that most CdTe cells can be described with three circuit elements: by a single
    forward diode (given by A, Jo), a resistance (R), and a voltage dependent photocurrent.
    VenueADJ-1-30630-12
    SourceUniversity of Delaware
    Document TypeQuarterly Report (Adobe Postscript file)
    Resource Date04/2006


    Post Date04/27/2006
    TitleCSU CDTE
    Link(MS Word 58 KB
    AuthorW. S. Sampath
    DescriptionDuring this quarter, we have progressed on the tasks outlined in our SOW for Phase II.  A fixture for automated cooling of the substrate in vacuum has been designed, fabricated, installed and tested. This is needed for optimum processing of the back contact. Large area devices in the form of strips (~0.5 cm X 8 cm.) have been fabricated and tested at NREL. Efficiency of 10.9% has been measured. The air-to-vacuum-to-air seals in the pilot system have a glass filled teflon liner. These liners have experienced wear and this results in scraping of the glass substrates in the seal. Improved liners have been designed and fabricated and are being installed in the system. Based on our current progress, no difficulties are anticipated in successfully completing the future targets outlined in the SOW.             A prototype production system to process 16.5x16.5 inch substrates continues to be advanced.  This activity is supported by another program from DOE-EERE and cost shared by National Starch and Chemicals (NSC). We are also in discussion with a reputed company to form a strategic partnership to manufacture large volumes of CdTe PV based on our technology. Numerous documents have been submitted to this group for evaluating our technology.  These discussions have advanced significantly.
    VenueXXL-5-44205-02
    SourceColorado State University
    Document TypeQuarterly Report (Word document)
    Resource Date04/2006


    Post Date02/01/2006
    TitleSTUDIES OF BASIC ELECTRONIC PROPERTIES OF CDTE-BASED SOLAR CELLS
    Link(PDF 152 KBDownload Acrobat Reader.
    AuthorJ. Beach
    DescriptionThe goal of this deep electronic states (DES) study is to detect, characterize, and identify DES that may be either limiting or enhancing VOC in order to help cell growers modify their processes to improve their devices. A J-V-T, QE, and impedance characterization analysis was performed on cells received from X. Wu that were processed without intentionally added Cu and with three CdCl2 treatments. This compliments a set of previously analyzed cells with added Cu and the same three CdCl2 treatments. This is part of an ongoing collaborative study with Wu. Further analyses are expected with variable Cu and O2
    VenueCSM Extension of ADJ-2-30630-05, Studies of Basic Electronic Properties of CdTe-based Solar Cells.
    SourceColorado School of Mines, Golden, CO
    Document TypeQuarterly Report (Adobe Postscript file)
    Resource Date01/31/2006


    Post Date02/28/2006
    TitleCHARACTERIZATION OF THE ELECTRONIC AND CHEMICAL STRUCTURE AT THIN FILM SOLAR CELL INTERFACES
    Link(PDF 99 KBDownload Acrobat Reader.
    AuthorC. Heske
    DescriptionThis project is devoted to deriving the electronic structure of interfaces in Cu(In,Ga)(S,Se)2 and CdTe thin film solar cells. By using a unique combination of spectroscopic methods (photoelectron spectroscopy, inverse photoemission, and X-ray ab-sorption and emission spectroscopy) a comprehensive picture of the electronic (i.e., band alignment in the valence and conduction band) as well as the chemical structure can be painted. The work focuses on (a) deriving the bench mark picture for world-record cells, (b) analyze state-of-the-art cells from industrial processes, and (c) aid in the troubleshooting of cells with substandard performance. In our recent beamtime at the Advanced Light Source, Lawrence Berkeley National Laboratory we collected first results with Cu(In,Ga)Se2 samples prepared by NREL. Together with additional photoemission measurements a detailed picture of the chemical composition at several interfaces and surfaces of the device structure can be drawn. The setup for inverse photoemission at UNLV was commissioned and first spectra were recorded.
    VenueU. Nevada, Las Vegas, subcontract XXL-5-44205-12, 2nd Quarterly Report
    SourceUniversity of Nevada, Las Vegas
    Document TypeQuarterly Report (Adobe Postscript file)
    Resource Date01/18/2006


    Post Date12/16/2005
    TitleCHARACTERIZATION AND ANALYSIS OF CIS AND CDTE CELLS
    Link(MS Word 45 KB
    AuthorJ. R. Sites
    DescriptionCdTe Device Model; Cu in the Back Contact;Back-Illuminated LBIC;  
    CdTe Photoluminescence; CIGS Thin Absorbers/Back Lighting; Effective Module Efficiency The two key module parameters that control the effective efficiency are the series resistance and leakage conductance of the module; (1) ?Grain-Boundary Recombination in Cu(In,Ga)Se2 Solar Cells,? J. Appl. Phys. 98, 113704, 10 pp (2005).  M. Gloeckler, W.K. Metzger, and J.R. Sites.
       (2) ?Potential of Sub-micrometer Thickness Cu(In,Ga)Se2 Solar Cells,? J. Appl. Phys. 98, 103703, 7 pp (2005).  M. Gloeckler and J.R. Sites.
    VenueSubcontract XXL-5-44205-03 Quarterly Report IV (September - November 2005); : http://www.physics.colostate.edu/groups/photovoltaic
    SourceColorado State University
    Document TypeQuarterly Report (Word document)
    Resource Date12/15/2005


    Post Date01/11/2006
    TitleFABRICATION AND PHYSICS OF CDTE DEVICES BY SPUTTERING
    Link(PDF 591 KBDownload Acrobat Reader.
    AuthorsA. Compaan, V. G. Karpov
    DescriptionThis progress report covers the third quarter of Phase 1 for the period September 1, 2005, through November 30, 2005, of the above Thin Film Photovoltaic Partnership Program subcontract. During this quarter we worked on thin CdTe solar cell limitations, spatial and temporal variations in electronic transport through a CdTe-based Schottky barrier, device physics modeling, and ellipsometric diagnostics. In this report we highlight our recent results on the distribution of copper in sputtered CdTe solar cells (task 1.3.4) and recently discovered reversible piezo-effect in CdTe/CdS solar cells consistent with the piezo parameters of CdS, which strongly supports our MIS device model (task 1.2.1).
    VenueRXL-5-44205-01 Phase 1/Quarter 3
    SourceUniversity of Toledo
    Document TypeQuarterly Report (Adobe Postscript file)
    Resource Date12/2005


    Post Date12/16/2005
    TitleCDTE-BASED SOLAR CELLS
    Link(PDF 670 KBDownload Acrobat Reader.
    AuthorB. E. McCandless
    DescriptionAlternative Cu-based contact processing for CdTe/CdS devices; Back contact analysis using bifacial CdTe devices; Bifacial Spectral Response Characterization: effect of CdTe thickness
    VenueNREL Subcontract #ADJ-1-30630-12
    SourceUniversity of Delaware
    Document TypeQuarterly Report (Adobe Postscript file)
    Resource Date11/30/2005


    Post Date10/21/2005
    TitleCHARACTERIZATION OF THE ELECTRONIC AND CHEMICAL STRUCTURE AT THIN FILM SOLAR CELL INTERFACES
    Link(PDF 414 KBDownload Acrobat Reader.
    AuthorC. Heske
    DescriptionThis project is devoted to deriving the electronic structure of interfaces in Cu(In,Ga)(S,Se)2 and CdTe thin film solar cells.  By using a unique combination of spectroscopic methods (photoelectron spectroscopy, inverse photoemission, and X-ray ab-sorption and emission) a comprehensive picture of the electronic (i.e., band alignment in the valence and conduction band) as well as chemical structure can be painted. The work focuses on (a) deriving the bench mark picture for world-record cells, (b) analyze state-of-the-art cells from industrial processes, and (c) aid in the troubleshooting of cells with substandard performance.
    Venuesubcontract quarterly report, U. Nevada, Las Vegas, XXL-5-44205-12
    SourceUniversity of Nevada, Las Vegas
    Document TypeQuarterly Report (Adobe Postscript file)
    Resource Date10/13/2005


    Post Date09/13/2005
    TitleCHARACTERIZATION AND ANALYSIS OF CIS AND CDTE CELLS
    Link(MS Word 44 KB
    AuthorJ. R. Sites
    DescriptionDuring the past quarter, we made progress in several areas as outlined below.  I am particularly pleased that the two students who completed their PhD this year have accepted R&D positions in the US thin-film photovoltaic industry.  Alex Pudov starts at Nanosolar in Palo Alto this week, and Markus Gloeckler will be joining First Solar in Toledo in early October. 
    Venue

    Quarterly Report III (June - August 2005) Subcontract XXL-5-44205-03

    SourceColorado State University
    Document TypeQuarterly Report (Word document)
    Resource Date09/12/2005


    Post Date09/13/2005
    TitleDEVELOPMENT OF A WIDE BAND GAP CELL FOR THIN FILM TANDEM SOLAR CELLS
    Link(PDF 64 KBDownload Acrobat Reader.
    AuthorR. W. Birkmire
    DescriptionCdZnTe and CIGS alloys
    VenueXAT-4-33624-01 6th Quarterly Report
    SourceUniversity of Delaware
    Document TypeQuarterly Report (Adobe Postscript file)
    Resource Date09/2005


    Post Date09/30/2005
    TitleFABRICATION AND PHYSICS OF CDTE DEVICES BY SPUTTERING
    Link(PDF 605 KBDownload Acrobat Reader.
    AuthorsA. Compaan, V. G. Karpov
    DescriptionThis progress report covers the second quarter of Phase 1 for the period June 1, 2005, through August 31, 2005, of the above Thin Film Photovoltaic Partnership Program subcontract. During this quarter we worked on spatial and temporal variations in electronic transport through a CdTe-based Schottky barrier, ellipsometric diagnostics, device physics modeling, and thin CdTe solar cell limitations. In this report we highlight our recent results on optical spectroscopy of deep levels in CdTe single crystal (task 1.3.1) and analysis of structural evolution during growth of CdS and CdTe from real time spectroscopic ellipsometry (task 1.3.2)
    VenueRXL-5-44205-01 Phase 1/Quarter 2
    SourceUniversity of Toledo
    Document TypeQuarterly Report (Adobe Postscript file)
    Resource Date09/2005


    Post Date10/05/2005
    Title

    CSU 3RD Q REPORT

    Link(MS Word 103 KB
    AuthorW. S. Sampath
    Description  During this quarter, we have progressed on the tasks outlined in our SOW for Phase I.  A significant extension to our pilot scale system has been designed, fabricated, installed and debugged.  This will allow improved process conditions for the back contact process steps.  The feasibility of cooling the substrate in vacuum for optimum processing of the back contact has been demonstrated. A large number of experiments have been performed on laser scribing of CdS/CdTe films. Mechanical scribing has yielded the lowest contact resistance between the scribed region and the metallization, to date. Researchers at National Starch and Chemicals (NSC) have performed many experiments to screen print carbon, nickel and silver films in patterns. The adhesion of these films was tested according to ASTM 3359B and achieved a 5B or "excellent" rating.  Based on our current progress, no difficulties are anticipated in successfully completing the future targets outlined in the SOW.             The nominal 2 MW/yr production prototype system continues to be advanced.  This activity is supported by another program from DOE-EERE and cost shared by National Starch and Chemicals (NSC). Three separate groups have expressed interest in licensing our technology for 50 MW/Yr plants. We are also in discussion with a large manufacturer for partnership to manufacture large volumes of CdTe PV. Numerous documents have been submitted to these groups for evaluating our technology. Detailed presentations and demonstrations of our technology were also given to many groups.
    VenueThin Film Partnership Program (Subcontract No. XXL-5-44205-02
    SourceColorado State University
    Document TypeQuarterly Report (Word document)
    Resource Date09/2005


    Post Date08/31/2005
    TitleFABRICATION AND PHYSICS OF CDTE DEVICES BY SPUTTERING
    Link(PDF 529 KBDownload Acrobat Reader.
    AuthorsA. Compaan, V. G. Karpov
    DescriptionDuring this quarter we worked on ellipsometric diagnostics, device physics modeling and thin CdTe solar cell limitations. In this report we highlight our recent results on real-time spectroscopic ellipsometry studies of rf-sputtered solar cells (task 1.3.2) and quantitative estimates of nonuniformity loss in solar cell modules, including the effect of series resistance.
    VenueRXL-5-44205-01 Phase 1/Quarter 1
    SourceUniversity of Toledo
    Document TypeQuarterly Report (Adobe Postscript file)
    Resource Date08/2005


    Post Date08/02/2005
    TitleIEC MONTHLY REPORT: CDTE
    Link(PDF 2.1 MBDownload Acrobat Reader.
    AuthorB. E. McCandless
    DescriptionDifferent aspects of processing vapor transport (VT) solar cells were evaluated and new processing options to address key issues of high throughput are being developed. In particular, variations in device performance are correlated with systematic variations in the CdCl2 treatment and with the exposure of fresh CdTe surfaces to humid ambient prior to CdCl2  treatment. With respect to CdTe deposition, characterization of the VT deposition system was carried out to refine the quantitative model used to monitor deposition rate and Cd utilization. With respect to surface treatments for back contact processing; alternatives to BDH processing, such as aniline treatment, continue to be investigated. Temperature dependant bifacial QE measurements gave new insights into the CdTe device physics. The formation rate and composition of oxide phases in CdTe films was investigated with respect to humidity. Participation in the National CdTe R&D Team meeting held in May 2005 is described.
    VenueADJ-1-30630-12
    SourceUniversity of Delaware
    Document TypeQuarterly Report (Adobe Postscript file)
    Resource Date08/01/2005


    Post Date08/31/2005
    TitleADVANCED PROCESSING OF CDTE- AND CUINXGA1-XSE2
    Link(PDF 325 KBDownload Acrobat Reader.
    AuthorC. S. Ferekides
    Descriptionquarter of Phase III of the above subcontract. The project deals with two thin film technologies: CdTe and CIGS. The focus areas include: (a) CdTe ? stability, novel back/front contacts, and the development of manufacturing friendly processes; (b) CIGS ? development of two-step non-co-evaporation technology.This is the progress report for the 3rd
    VenueNDJ-2-30630-18 Phase III/Quarter 3
    SourceUniversity of South Florida, Tampa
    Document TypeQuarterly Report (Adobe Postscript file)
    Resource Date08/2005


    Post Date07/26/2005
    TitleRESEARCH LEADING TO HIGH THROUGHPUT MANUFACTURING OF THIN-FILM CDTE PV MODULES
    Link(MS Word 165 KB
    AuthorsR. C. Powell, P. V. Meyers
    Description

     Reactor Design

    Advanced Front Contacts

    ChlorineIssues

    Back-Contact Issues

    Stabilitiy Issues

    Third Level Metrics

    VenueRDJ-2-30630-20 (); Q11 Quarterly Report
    SourceFirst Solar, Toledo, OH
    Document TypeQuarterly Report (Word document)
    Resource Date07/15/2005


    Post Date08/04/2005
    TitleBARRIER COATINGS AND STABILITY OF THIN FILM SOLAR CELLS
    Link(MS Word 3.4 MB
    AuthorL. Olsen
    DescriptionWork concentrated on studies concerning encapsulation of CdTe cells.  Three topics are discussed: further consideration of results for a CSU cell encapsulated with a single dyad/Al-film combination; results for studies of stressed bare cell cells from CSU and University of Toledo; and studies of encapsulated calcium samples subjected to heat and humidity conditions.
    Venue3rd Quarterly Report - Phase I: March 1,  2005   --   May 31,  2005
    SourcePacific Northwest National Lab (PNNL)
    Document TypeQuarterly Report (Word document)
    Resource Date07/2005


    Post Date06/14/2005
    TitleCHARACTERIZATION AND ANALYSIS OF CIS AND CDTE CELLS
    Link(MS Word 46 KB
    AuthorJ. R. Sites
    Description  During the past quarter, we reported a number of results at both the Materials Research Society Spring Meeting in late March and the CdTe National Team Meeting in early May.  Most of the manuscripts or powerpoint slides from these and other presentations are available on our web site:    www.physics.colostate.edu/groups/photovoltaic In addition, Markus Gloeckler recently completed his PhD degree.  His thesis, which is both attached and on the web page, contains a more extensive description of his work on CIGS grain boundaries, grading effects, and efficiency limitations than that published or submitted for publication.
    Venue  Quarterly Report II (March - May 2005) Subcontract XXL-5-44205-03
    SourceColorado State University
    Document TypeQuarterly Report (Word document)
    Resource Date06/13/2005


    Post Date06/27/2005
    TitleBARRIER COATINGS AND STABILITY OF THIN FILM SOLAR CELLS
    Link(MS Word 1.8 MB
    AuthorL. Olsen
    DescriptionThe key objectives of the program are to develop low cost barrier coatings for CIS and CdTe solar cells and to develop an improved understanding of the effects of water on the stability of these types of cells. The scope of this work entails investigations of multilayer, barrier coatings for CIS and CdTe thin film solar cells, and studies of stability issues, particularly those related to moisture ingress.  Investigation of barrier coatings on SSI and CSU devices will continue in an effort to establish effective approaches to encapsulate CIS and CdTe modules.  Studies will also be directed towards issues concerning cost of the coating process.  The program will be structured into three major tasks:  (1) Barrier coatings and stability studies for CIS Solar Cells; (2) Barrier coatings and stability studies for CdTe solar cells; (3) Low cost coating process development.
    Venue  2nd Quarterly Report - Phase I: December 1,  2004   --   February 28,  2005
    SourcesColorado State University; Pacific Northwest National Lab (PNNL)
    Document TypeQuarterly Report (Word document)
    Resource Date06/2005


    Post Date07/15/2005
    TitleQUARTERLY REPORT CDTE
    Link(MS Word 80 KB
    AuthorW. S. Sampath
    DescriptionDuring this quarter, we have progressed on the tasks outlined in our SOW for Phase I.  The reproducibility of device efficiency and stability results during long duration operation of the pilot system with a single charge loading for the CdS, CdTe and CdCl2 processes has been reported earlier by us [1].  Currently, efforts are underway to advance the back contact processing to this same level of reproducibility, as outlined in the SOW.  In order to accomplish this, a significant upgrade to increase the processing space in our pilot scale system has been designed, fabricated and is currently being installed.  A series of detailed studies on the effect of oxygen during the CdCl2 treatment has been performed.  Oxygen has been shown to improve the effectiveness of the CdCl2 treatment.  Preliminary results on developing a module interconnection process are promising.  Many devices and CdS/CdTe films have been provided to many groups including Larry Olsen of PNNL.  Based on our current progress, no difficulties are anticipated in successfully completing the future targets outlined in the SOW.             A loadlock system for the prototype production system to transport 16.5x16.5 inch substrates has been designed, constructed and successfully tested.  This activity is supported by another program from DOE-EERE and cost shared by National Starch and Chemicals (NSC). Three separate groups including  Lisa Barnett from DOE headquarters, Bolko Von Roedern of NREL, Dave Miles from NSC and other representatives from DOE, Peter Meyers and Roger Green of First Solar, and members of the Fort Collins business community were all given a detailed tour of our facilities.  Detailed presentations and demonstrations of our technology were also given.
    VenueXXL-5-44205-02
    SourceColorado State University
    Document TypeQuarterly Report (Word document)
    Resource Date06/2005


    Post Date05/20/2005
    Title

    ADVANCED PROCESSING OF CDTE- AND CUINXGA1-XSE2

    Link(PDF 277 KBDownload Acrobat Reader.
    AuthorsC. S. Ferekides, D. Morel
    DescriptionThis is the progress report for the 2nd quarter of Phase III of the above subcontract. The project deals with two thin film technologies: CdTe and CIGS. The focus areas include: (a) CdTe ? stability, novel back/front contacts, and the development of manufacturing friendly processes;
    (b) CIGS ? development of two-step non-co-evaporation technology.
    Venue

    NDJ-2-30630-18 Phase III/Quarter 2

    SourceUniversity of South Florida, Tampa
    Document TypeQuarterly Report (Adobe Postscript file)
    Resource Date05/2005


    Post Date05/13/2005
    TitleCENTER OF EXCELLENCE
    Link(PDF 529 KBDownload Acrobat Reader.
    AuthorsR. W. Birkmire, B. E. McCandless
    DescriptionThis report covers research conducted at the Institute of Energy Conversion (IEC) for the period from March 3, 2005 to April 3, 2005, under the subject subcontract. The report highlights progress and results obtained under Task 1 (CdTe-based solar cells).
    VenueADJ-1-30630-12
    SourceUniversity of Delaware
    Document TypeQuarterly Report (Adobe Postscript file)
    Resource Date04/2005


    Post Date04/05/2005
    TitleSUBCONTRACT NO. XXL-5-44205-02 TO COLORADO STATE UNIVERSITY
    Link(MS Word 70 KB
    AuthorW. S. Sampath
    Description  During this quarter, we have progressed on the tasks outlined in our SOW for Phase I.   Reproducibility of device efficiency and stability has been demonstrated during long duration operation of the system with a single charge loading for the CdS, CdTe and CdCl2 process. Currently efforts are underway to advance the back contact processing to the same level as outlined in the SOW.  Preliminary results on interconnection have yielded very promising results. Mathematical modeling of a package design has yielded results that show that moisture can be kept from our device for 22 years at 65C temperature with saturated humidity. Hardware to perform steady state photocapacitance (PHCAP) has been designed, built and tested in our laboratory. The effect of processing on the deep states in CdTe devices can be seen quantitatively. Optimum process conditions lead to lower photocapacitance signals. Many devices and CdS/CdTe samples have been provided to many groups including Larry Olsen of PNNL. Based on our current progress, no difficulties are anticipated in successfully completing the future targets outlined in the SOW.             In addition to the tasks outlined above, two members of our team attended the 31st IEEE PVSC.  Two oral presentations (preprints were sent to you earlier) were given.  In addition, a poster was presented at the ICTMC conference and this paper has been accepted for publication in a journal. A loadlock system for the 16" X 16" substrates has been designed and constructed and is being tested. This activity is supported by another program from DOE-EERE and cost shared by NSC. Two scientists from GE Global Research were given a detailed tour of our facilities and a detailed presentation of our technology was made.
    VenueXXL-5-44205-02
    SourceColorado State University
    Document TypeQuarterly Report (Word document)
    Resource Date03/28/2005


    Post Date03/22/2005
    TitleQUARTERLY REPORT I (DECEMBER 2004 - FEBRUARY 2005) "CHARACTERIZATION AND ANALYSIS OF CIS AND CDTE CELLS" SUBCONTRACT XXL-5-44205-03
    Link(MS Word 39 KB
    AuthorJ. R. Sites
    DescriptionCIGS grain boundaries; thins CIGS grading; secondary CIGS junction barriers; Alternative junctions with CIGS; Cdte Cell Operation, LBIC Studies, PL Studies
    Venue
    SourceColorado State University
    Document TypeQuarterly Report (Word document)
    Resource Date03/21/2005


    Post Date02/17/2005
    TitleRESEARCH LEADING TO HIGH THROUGHPUT MANUFACTURING OF THIN-FILM CDTE PV MODULES
    Link(MS Word 85 KB
    AuthorR. C. Powell
    Description
    VenueRDJ-2-30630-20
    SourceFirst Solar, Toledo, OH
    Document TypeQuarterly Report (Word document)
    Resource Date02/15/2005


    Post Date04/18/2005
    TitleRESEARCH LEADING TO HIGH THROUGHPUT MANUFACTURING OF THIN-FILM CDTE PV MODULES
    Link(MS Word 66 KB
    AuthorR. C. Powell
    DescriptionWe completed the move from Technology Center facilities at Eckel Junction Road.  All development personnel and equipment is now located at the Cedar Park facility.  Nearly all of the equipment has been installed and is operational.  We expect the move to improve the effectiveness of the Technology Development Team
    Venue

    subcontract rdj-2-30630-20

    SourceFirst Solar, Toledo, OH
    Document TypeQuarterly Report (Word document)
    Resource Date02/15/2005


    Post Date05/13/2005
    TitleCENTER OF EXCELLENCE
    Link(PDF 757 KBDownload Acrobat Reader.
    AuthorsR. W. Birkmire, B. E. McCandless
    DescriptionThis report covers research conducted at the Institute of Energy Conversion (IEC) for the period from Dec. 04, 2004 to Jan. 03, 2005, under the subject subcontract. The report highlights progress and results obtained under Task 1 (CdTe-based solar cells).
    VenueADJ-1-30630-12
    SourceUniversity of Delaware
    Document TypeQuarterly Report (Adobe Postscript file)
    Resource Date01/2005


    Post Date02/14/2005
    TitleBARRIER COATINGS AND STABILITY OF THIN FILM SOLAR CELLS
    Link(MS Word 2.5 MB
    AuthorL. Olsen
    Description
    Venue
    SourcePacific Northwest National Lab (PNNL)
    Document TypeQuarterly Report (Word document)
    Resource Date12/2004


    Post Date02/14/2005
    TitleBARRIER COATINGS AND STABILITY OF THIN FILM SOLAR CELLS
    Link(MS Word 2.5 MB
    AuthorL. Olsen
    DescriptionInvestigations of approaches for applying barrier coatings to CdTe cells from Dr. Sampath's group at Colorado State University (CSU) continued this past quarter. After reviewing our approach to coating the CSU cells, results of accelerated stress tests are given.
    Venue1st Quarterly Report - Phase I: September 1, 2004 — November 30, 2004
    SourcePacific Northwest National Lab (PNNL)
    Document TypeQuarterly Report (Word document)
    Resource Date12/2004


    Post Date02/08/2005
    TitleSTUDIES OF BASIC ELECTRONIC PROPERTIES OF CDTE-BASED SOLAR CELLS & THEIR EVOLUTION DURING PROCESSING & STRESS
    Link(MS Word 1.9 MB
    AuthorV. Kaydanov
    DescriptionCdTe/CdS obtained in the past four months in the following areas:
  • Studies of electroluminescence intensity and pattern in differently processes and treated cells
  • Studies of deep electronic states (DES) with admittance spectroscopy and transient measurements; analysis and classification of the DES signatures
  • Mapping photocurrent collection over a cell area with the high resolution near field scanning optical microscopy (NSOM)
  • VenueNREL report
    SourceColorado School of Mines, Golden, CO
    Document TypeQuarterly Report (Word document)
    Resource Date10/2004


    Post Date03/03/2005
    TitleDEVICE PHYSICS OF THIN-FILM POLYCRYSTALLINE SOLAR CELLS
    Link(MS Word 30 KB
    AuthorJ. R. Sites
    Description
    VenueADJ-1-30630-06
    SourceColorado State University
    Document TypeQuarterly Report (Word document)
    Resource Date09/07/2004


    Post Date02/09/2005
    TitleBARRIER COATINGS AND STABILITY OF THIN FILM SOLAR CELLS
    Link(MS Word 62 KB
    AuthorL. Olsen
    DescriptionEfforts this past quarter concentrated on developing approaches to applying barrier coatings to CdTe cells from Dr. Sampath's group at Colorado State University (CSU) and carrying out accelerated testing of the cells.
    Venue4th Quarterly Report - Phase II: June 1,  2004 — August 31, 2004
    SourcePacific Northwest National Lab (PNNL)
    Document TypeQuarterly Report (Word document)
    Resource Date09/2004


    Post Date03/03/2005
    TitleDEVELOPMENT OF A WIDE BAND GAP CELL FOR THIN FILM TANDEM SOLAR CELLS
    Link(PDF 856 KBDownload Acrobat Reader.
    AuthorR. W. Birkmire
    Description
    VenueXAT-4-33624-01
    SourceUniversity of Delaware
    Document TypeQuarterly Report (Adobe Postscript file)
    Resource Date09/2004


    Post Date05/10/2005
    TitleNREL SUBCONTRACT # ADJ-1-30630-12
    Link(PDF 437 KBDownload Acrobat Reader.
    AuthorR. W. Birkmire
    Descriptiona-Si and CdTe
    Venue
    SourceUniversity of Delaware
    Document TypeQuarterly Report (Adobe Postscript file)
    Resource Date08/23/2004


    Post Date02/09/2005
    TitleRESEARCH LEADING TO HIGH THROUGHPUT MANUFACTURING OF THIN-FILM CDTE PV MODULES
    Link(MS Word 108 KB
    AuthorR. C. Powell
    DescriptionProgress
    VenueNREL report Q7 RDJ-2-30630-20
    SourceFirst Solar, Toledo, OH
    Document TypeQuarterly Report (Word document)
    Resource Date07/19/2004


    Post Date02/08/2005
    TitleCSU PHASE III Q3
    Link(PDF 100 KBDownload Acrobat Reader.
    AuthorW. S. Sampath
    DescriptionSignificant advancements have been made in demonstrating a process for consistently fabricating stable CdTe PV. During the past few months, the optimum, baseline absorber/CdClz.
    VenueSubcontract No. ADJ-1-30630-07
    SourceColorado State University
    Document TypeQuarterly Report (Adobe Postscript file)
    Resource Date06/22/2004


    Post Date02/09/2005
    TitleCDTE-BASED SOLAR CELLS
    Link(PDF 45 KBDownload Acrobat Reader.
    AuthorB. E. McCandless
    Description
    VenueADJ-1-30630-12
    SourceUniversity of Delaware
    Document TypeQuarterly Report (Adobe Postscript file)
    Resource Date06/21/2004


    Post Date02/09/2005
    TitleSI AND DIAGNOSTICS
    Link(PDF 239 KBDownload Acrobat Reader.
    AuthorR. W. Birkmire
    Description
    VenueADJ-1-30630-12
    SourceUniversity of Delaware
    Document TypeQuarterly Report (Adobe Postscript file)
    Resource Date06/03/2004


    Post Date02/08/2005
    TitleSTUDIES OF BASIC ELECTRONIC PROPERTIES OF CDTE-BASED SOLAR CELLS & THEIR EVOLUTION DURING PROCESSING & STRESS
    Link(MS Word 364 KB
    AuthorsV. Kaydanov, et al.
    DescriptionPreviously we have reported some differences in the EL and Pl spectra obtained from the same small area of a cell, as well as some features of the spectra that supposedly could be attributed to Cu related defects [1, 2]. Here we present results of new comparative studies on differently processed cells: (a) cells intentionally doped non-uniformly with Cu and subjected to wet or dry treatments with CdCl2 of different purity; (b) prepared at CSU with and without Cu-doping.
    VenueNREL quarterly report
    SourceColorado School of Mines, Golden, CO
    Document TypeQuarterly Report (Word document)
    Resource Date06/2004


    Post Date02/09/2005
    TitleDEVELOPMENT OF A WIDE BAND GAP CELL FOR THIN FILM TANDEM SOLAR CELLS
    Link(PDF 700 KBDownload Acrobat Reader.
    AuthorN/A
    DescriptionMuch of the work this quarter continued to focus on the relative incorporation of S and Se during CuIn(SeS)2 or Cu(InGa)(SeS)2 deposition. In the previous quarterly report, we showed that the re was a reproducible difference between films grown with Cu-rich composition and those with Cu-poor composition. Films deposited with Cu/(In+Ga) > 1.1 preferentially incorporate S, while those with Cu/(In+Ga) < 0.9 preferentially incorporate Se. This is shown in Figure 1, which plots the relative S and Se incorporation in films, as measured by EDS, as a function of the S/(S+Se) ratio in the vapor, determined by the average effusion rate measured for each source during the run. For both the Cu-rich and Cu-poor cases, there is no correlation with Ga/(In+Ga) and data is included for CuIn(SeS)2 films as well as Cu(InGa)(SeS)2 with different Ga/(In+Ga). Post-deposition KCN etching, to remove a surface Cux (SeS)y...
    Venue2nd Quarterly Report XAT-4-33624-01
    SourceUniversity of Delaware
    Document TypeQuarterly Report (Adobe Postscript file)
    Resource Date05/05/2004


    Post Date02/08/2005
    TitleDEVICE PHYSICS OF THIN-FILM POLYCRYSTALLINE SOLAR CELLS
    Link(MS Word 35 KB
    AuthorJ. R. Sites
    DescriptionMeasurement and analysis.
    VenueNREL Q10 ADJ-1-30630-06
    SourceColorado State University
    Document TypeQuarterly Report (Word document)
    Resource Date03/05/2004


    Post Date03/03/2005
    TitleDEVICE PHYSICS OF THIN-FILM POLYCRYSTALLINE SOLAR CELLS
    Link(MS Word 35 KB
    AuthorJ. R. Sites
    Description
    VenueADJ-1-30630-06
    SourceColorado State University
    Document TypeQuarterly Report (Word document)
    Resource Date03/05/2004


    Post Date02/09/2005
    TitleHIGH-EFFICIENCY CADMIUM-TELLURIDE THIN-FILM SOLAR CELLS
    Link(PDF 320 KBDownload Acrobat Reader.
    AuthorA. Compaan
    DescriptionThe report describes our activities and progress in understanding of the effects of the back contact on device open-circuit voltage and efficiency. We propose a new structure for fabricating efficient CdTe/CdS solar cells (in the range of 13%) without Cu doping or post-metal heat treatments. Also, we describe the results of our study of synchrotron xray absorption fine structure (XAFS) aimed at understanding the role of diffused copper in CdCl2 treated CdTe.
    VenueNDJ-1-30630-02 Phase 3/Quarter 2
    SourceUniversity of Toledo
    Document TypeQuarterly Report (Adobe Postscript file)
    Resource Date03/2004


    Post Date02/10/2005
    TitleADVANCED PROCESSING OF CDTE- AND CUINXGA1-XSE2-
    Link(PDF 189 KBDownload Acrobat Reader.
    AuthorsC. S. Ferekides, D. Morel
    DescriptionThe focus areas include: (a) CdTe ? stability, novel back/front contacts, and the development of manufacturing friendly processes; (b) CIGS ? development of two-step non-co-evaporation technology.
    VenueNDJ-2-30630-18 Phase III/Quarter 1
    SourceUniversity of South Florida, Tampa
    Document TypeQuarterly Report (Adobe Postscript file)
    Resource Date03/2004


    Post Date02/08/2005
    TitleSTUDIES OF BASIC ELECTRONIC PROPERTIES OF CDTE-BASED SOLAR CELLS & THEIR EVOLUTION DURING PROCESSING & STRESS
    Link(MS Word 747 KB
    AuthorV. Kaydanov
    DescriptionOur previous studies demonstrated high sensitivity of EL intensity and pattern to the CdTe cell processing and stressing (see, e.g., [1]). In particular, it was found that even a "gentle" stress can significantly effect measured EL whereas the J-V characterization detects only slight changes. EL imaging of a cell proved useful to reveal micro-nonuniformities in electronic properties and clarify mechanisms behind them. Deep states...
    VenueNREL quarterly
    SourceColorado School of Mines, Golden, CO
    Document TypeQuarterly Report (Word document)
    Resource Date02/2004


    Post Date02/09/2005
    TitleRESEARCH LEADING TO HIGH THROUGHPUT MANUFACTURING OF THIN-FILM CDTE PV MODULES
    Link(MS Word 784 KB
    AuthorR. C. Powell
    DescriptionProgress report.
    VenueNREL report Q5 RDJ-2-30630-20
    SourceFirst Solar, Toledo, OH
    Document TypeQuarterly Report (Word document)
    Resource Date01/15/2004


    Post Date01/18/2004
    TitleRESEARCH LEADING TO HIGH THROUGHPUT MANUFACTURING OF THIN-FILM CDTE PV MODULES
    Link(MS Word 784 KB
    AuthorR. C. Powell
    DescriptionReactor development, uniformity issues, stress testing, back contact improvement
    VenueFirst Solar: RDJ-2-30630-20; Q5 NREL Quarterly Report
    SourceFirst Solar, Toledo, OH
    Document TypeQuarterly Report (Word document)
    Resource Date01/15/2004


    Post Date02/09/2005
    TitleCDTE SOLAR CELLS
    Link(PDF 1.7 MB